EUDYNA FLM1213-6F

FLM1213-6F
X, Ku-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 37.5dBm (Typ.)
High Gain: G1dB = 7.0dB (Typ.)
High PAE: ηadd = 27% (Typ.)
Low IM3 = -45dBc@Po = 25dBm
Broad Band: 12.7 ~ 13.2GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed
DESCRIPTION
The FLM1213-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain
in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
31.2
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Limit
Typ. Max.
Unit
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Min.
VDS = 5V, VGS = 0V
-
2800
4200
mA
Transconductance
gm
VDS = 5V, IDS = 1800mA
-
2350
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 120mA
-0.5
-1.5
-3.0
V
-5
-
-
V
36.5
37.5
-
dBm
6.0
7.0
-
dB
-
1800
2100
mA
-
27
-
%
-
-
±0.6
dB
-42
-45
-
dBc
-
4.0
4.5
°C/W
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Power-Added Efficiency
Idsr
ηadd
IGS = -120µA
VDS = 10V,
IDS = 0.6 IDSS(Typ.),
f = 12.7 ~ 13.2GHz,
ZS = ZL = 50Ω
Gain Flatness
∆G
3rd Order Intermodulation
Distortion
IM3
f = 13.2GHz, ∆f = 10MHz
2-Tone Test
Pout = 25dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
CASE STYLE: IA
Edition 1.4
August 2004
G.C.P.: Gain Compression Point
1
FLM1213-6F
X, Ku-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
30
20
10
0
50
100
150
29
27
-10
25
23
21
-40
19
-50
13
200
28dBm
34
26dBm
32
24dBm
Output Power (dBm)
Output Power (dBm)
38
36
17
19
21
23
25
27
OUTPUT POWER vs. INPUT POWER
VDS = 10V
P1dB
Pin = 32dBm
15
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
38
-30
IM3
Case Temperature (°C)
40
-20
Pout
VDS = 10V
f = 12.95 GHz
Pout
36
30
34
32
20
ηadd
10
30
22
12.7 12.8 12.9 13.0 13.1 13.2
24
26
28
30
32
Input Power (dBm)
Frequency (GHz)
2
34
ηadd (%)
40
VDS=10V
f1 = 13.2 GHz
f2 = 13.21 GHz
2-tone test
IM3 (dBc)
Output Power (S.C.L.) (dBc)
Total Power Dissipation (W)
POWER DERATING CURVE
FLM1213-6F
X, Ku-Band Internally Matched FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
12.5
12.6
12.7
+j250
12.8
12.9
0
10
12.5
13.0
50Ω
25
12.7
12.8
13.4
-j10
180°
250
13.1
13.0
13.4
12.7
12.6
-j250
13.2
3
4
5
0°
12.5
12.5 0.1
-j100
0.2
-90°
-j50
FREQUENCY
(MHZ)
2
SCALE FOR |S21|
12.8
13.2
13.3
-j25
1
12.7
SCALE FOR |S12|
+j10
13.3
13.4
13.2
13.1
13.0
13.4
12.9
13.2
12.8
13.0
S11
S-PARAMETERS
VDS = 10V, IDS = 1800mA
S21
S12
MAG
ANG
MAG
ANG
S22
MAG
ANG
12500
.363
-170.0
2.314
-120.0
.089
-147.7
.666
96.7
12600
.292
-162.8
2.423
-134.4
.098
-162.0
.605
79.7
12700
.259
-147.8
2.485
-149.4
.106
-177.7
.549
61.7
12800
.283
-134.2
2.462
-163.9
.109
167.6
.483
42.8
12900
.331
-127.7
2.388
-177.9
.111
154.2
.430
23.9
13000
.381
-127.4
2.291
169.6
.111
142.7
.398
6.7
13100
.426
-130.4
2.171
157.7
.108
131.1
.374
-10.3
13200
.467
-133.5
2.065
146.3
.107
121.0
.365
-24.0
13300
.493
-138.1
1.948
136.7
.106
112.3
.373
-37.4
13400
.509
-143.1
1.858
126.8
.105
102.8
.386
-47.0
3
MAG
ANG
FLM1213-6F
X, Ku-Band Internally Matched FET
1.5 Min.
(0.059)
Case Style "IA"
Metal-Ceramic Hermetic Package
1
0.1
(0.004)
9.7±0.15
(0.382)
2-R 1.25±0.15
(0.049)
4
2
3
1.8±0.15
(0.071)
1.5 Min.
(0.059)
0.5
(0.020)
3.2 Max.
(0.126)
13.0±0.15
(0.512)
1.15
(0.045)
0.2 Max.
(0.008)
8.1
(0.319)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
16.5±0.15
(0.650)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
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