ISL9V5036P3_F085 EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit, specifically as coil driver. Internal diode provide voltage clamping without the need for external component. EcoSPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications Features • • • • • Industry Standard TO-220 package SCIS Energy = 500mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Formerly Developmental Type 49443 Package Symbol COLLECTOR JEDEC TO-220AB EC G R1 GATE R2 EMITTER COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 390 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy 500 mJ ESCIS150 mJ At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy 300 IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 46 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 31 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total TC = 25°C 250 W Power Dissipation Derating TC > 25°C 1.67 W/°C Operating Junction Temperature Range -40 to 175 °C Storage Junction Temperature Range -40 to 175 °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV TJ TSTG TL ©2011 Fairchild Semiconductor Corporation ISL9V5036P3_F085 Rev. C5, August 2011 www.fairchildsemi.com ISL9V5036P3_F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT August 2011 Device Marking Device Package Reel Size V5036P ISL9V5036P3_F085 TO-220AB Tube Tape Width Quantity N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 330 360 390 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C 360 390 420 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1KΩ, See Fig. 11 ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ±12 ±14 - V TC = 25°C - - 25 µA TC = 150°C - - 1 mA VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C - - 1 mA - - 40 mA - 75 - Ω 10K - 30K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.0V TC = 25°C, See Fig. 4 - 1.17 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150°C - 1.50 1.80 V - 32 - nC TC = 25°C 1.3 - 2.2 V TC = 150°C 0.75 - 1.8 V - 3.0 - V Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 0.7 4 µs - 2.1 7 µs VCE = 300V, L = 2mH, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 10.8 15 µs - 2.8 15 µs - - 500 mJ - - 0.6 °C/W TJ = 25°C, L = 670 µH, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 Thermal Characteristics RθJC Thermal Resistance Junction-Case ©2011 Fairchild Semiconductor Corporation ISL9V5036P3_F085 Rev. C5, August 2011 www.fairchildsemi.com ISL9V5036P3_F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 45 RG = 1KΩ, VGE = 5V,Vdd = 14V 40 35 30 TJ = 25°C 25 20 15 TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 45 RG = 1KΩ, VGE = 5V,Vdd = 14V 40 35 30 25 20 TJ = 25°C 15 TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 0 0 0 50 100 150 200 250 300 350 0 2 4 tCLP, TIME IN CLAMP (µS) 1.10 ICE = 6A 1.05 VGE = 3.7V VGE = 4.0V 1.00 VGE = 4.5V VGE = 5.0V VGE = 8.0V 0.90 0.85 -50 -25 0 25 50 75 100 10 125 150 1.25 ICE = 10A 1.20 VGE = 3.7V 1.10 VGE = 4.5V VGE = 5.0V 1.05 VGE = 8.0V 1.00 -50 175 VGE = 4.0V 1.15 -25 0 TJ, JUNCTION TEMPERATURE (°C) 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature Figure 4.Collector to Emitter On-State Voltage vs Junction Temperature 50 50 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 8 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp 0.95 6 L, INDUCTANCE (mHy) VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 TJ = - 40°C 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs Collector to Emitter On-State Voltage ©2011 Fairchild Semiconductor Corporation ISL9V5036P3_F085 Rev. C5, August 2011 VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 TJ = 25°C 0 0 0 VGE = 8.0V 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector Current vs Collector to Emitter On-State Voltage www.fairchildsemi.com ISL9V5036P3_F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT Typical Characteristics 50 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 VGE = 8.0V VGE = 5.0V VGE = 4.5V 40 VGE = 4.0V VGE = 3.7V 30 20 10 TJ = 175°C 0 0 1.0 2.0 3.0 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 40 30 TJ = 175°C 20 TJ = 25°C 10 TJ = -40°C 0 1.5 1.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.5 2.0 3.0 3.5 4.0 4.5 VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Collector Current Figure 8. Transfer Characteristics 40 30 20 10 0 25 50 75 100 125 150 VCE = VGE 2.0 VGE = 4.0V VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 50 ICE = 1mA 1.8 1.6 1.4 1.2 1.0 175 -50 0 -25 TC, CASE TEMPERATURE (°C) 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature 20 10000 ICE = 6.5A, VGE = 5V, RG = 1KΩ Resistive tOFF 18 VECS = 24V 1000 16 SWITCHING TIME (µS) LEAKAGE CURRENT (µA) 25 100 VCES = 300V 10 VCES = 250V 14 Inductive tOFF 12 10 8 6 1 Resistive tON 4 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Leakage Current vs Junction Temperature ©2011 Fairchild Semiconductor Corporation ISL9V5036P3_F085 Rev. C5, August 2011 175 2 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Switching Time vs Junction Temperature www.fairchildsemi.com ISL9V5036P3_F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT Typical Characteristics (Continued) 3000 8 IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C VGE, GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1 MHz C, CAPACITANCE (pF) 2500 2000 CIES 1500 1000 CRES 500 COES 7 6 5 VCE = 12V 4 3 2 VCE = 6V 1 0 0 5 10 15 20 0 25 0 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 20 30 40 50 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 360 TJ = - 40°C BVCER, BREAKDOWN VOLTAGE (V) ICER = 10mA 358 356 354 TJ = 175°C 352 TJ = 25°C 350 348 346 344 342 340 10 1000 100 2000 3000 RG, SERIES GATE RESISTANCE ( Ω) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 10-1 0.1 0.05 t1 0.02 10-2 0.01 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-3 SINGLE PULSE 10-4 10-6 10-5 10-4 10-3 10-2 10-1 T1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case ©2011 Fairchild Semiconductor Corporation ISL9V5036P3_F085 Rev. C5, August 2011 www.fairchildsemi.com ISL9V5036P3_F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT Typical Characteristics (Continued) L VCE R or L C PULSE GEN LOAD C RG RG = 1KΩ DUT G + DUT G VCE - 5V E E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit VCE BVCES tP VCE L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV Figure 19. Energy Test Circuit ©2011 Fairchild Semiconductor Corporation ISL9V5036P3_F085 Rev. C5, August 2011 Figure 20. Energy Waveforms www.fairchildsemi.com ISL9V5036P3_F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT Test Circuits and Waveforms TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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