TRIQUINT TGF2021-01

Advance Product Information
June 8, 2005
DC - 12 GHz Discrete power pHEMT
TGF2021-01
Key Features and Performance
•
•
•
•
•
•
•
Frequency Range: DC - 12 GHz
> 30 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
1mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 75-125mA
(Under RF Drive, Id rises from 75mA to 240mA)
Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
•
Product Description
The TGF2021-01 typically provides
> 30 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-01
appropriate for high efficiency
applications.
The TGF2021-01 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
Primary Applications
•
•
•
•
•
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
35
30
Maximum Gain (dB)
The TriQuint TGF2021-01 is a discrete
1 mm pHEMT which operates from
DC-12 GHz. The TGF2021-01 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
25
MSG
20
15
MAG
10
5
0
The TGF2021-01 has a protective
surface passivation layer providing
environmental robustness.
0
2
4
6
8
10
12
14
16
Frequency (GHz)
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
1
Advance Product Information
June 8, 2005
TGF2021-01
TABLE I
MAXIMUM RATINGS
Symbol
V+
Parameter 1/
Positive Supply Voltage
-
V
Negative Supply Voltage Range
+
I
Notes
12.5 V
2/
-5V to 0V
Positive Supply Current
470 mA
| IG |
Gate Supply Current
PIN
Input Continuous Wave Power
PD
Power Dissipation
TCH
TM
TSTG
Value
2/
7 mA
25 dBm
2/
See note 3
2/ 3/
Operating Channel Temperature
150 °C
4/
Mounting Temperature (30 Seconds)
320 °C
-65 to 150 °C
Storage Temperature
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
3/
4/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 86.5 (°C/W)
Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 qC, Nominal)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Idss
Saturated Drain Current
-
300
-
mA
Gm
Transconductance
-
375
-
mS
VP
Pinch-off Voltage
-1.5
-1
-0.5
V
VBGS
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
-30
-
-14
V
-30
-
-14
V
VBGD
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
2
Advance Product Information
June 8, 2005
TGF2021-01
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
PARAMETER
Vd = 10V
Idq = 75mA
Vd = 12V
Idq = 75mA
UNITS
Psat
Saturated Output Power
30.8
31.5
dBm
PAE
Power Added Efficiency
50
48
%
Gain
Power Gain
11
11
dB
Rp 2/
Parallel Resistance
26.6
31.9
Ω
Cp 2/
Parallel Capacitance
0.464
0.496
pF
ΓL 3/
Efficiency Tuned:
Load Reflection coefficient
0.527 ∠ 148.0
0.539 ∠ 141.0
-
Psat
Saturated Output Power
30
30.7
dBm
PAE
Power Added Efficiency
59
55
%
Gain
Power Gain
11.5
11
dB
Rp 2/
Parallel Resistance
49.0
55.6
Ω
Cp 2/
Parallel Capacitance
0.539
0.505
pF
0.643 ∠ 126.3
-
SYMBOL
Power Tuned:
Load Reflection coefficient
0.642 ∠ 130.6
ΓL 3/
1/ Values in this table are taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
TABLE IV
THERMAL INFORMATION
Parameter
θJC Thermal Resistance
(channel to backside of carrier)
Test Conditions
Vd = 12 V
Idq = 75 mA
Pdiss = 0.9 W
TCH
(oC)
TJC
(qC/W)
TM
(HRS)
148
86.5
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
3
Advance Product Information
June 8, 2005
TGF2021-01
Measured Fixtured Data
Vd=10V, Id=75mA
‘
11
12
13
14
15
16
17
18
19
20
21
22
23
12
72
11
66
10
60
9
54
8
48
7
42
6
36
5
30
Vd=12V, Id=75mA
4
24
Vd=10V, Id=75mA
3
18
2
12
1
6
0
0
11
24
PAE (%)
320
300
280
260
240
220
200
180
160
140
120
100
80
60
Vd=12V, Id=75mA
Gain (dB)
33
32
31
30
29
28
27
26
25
24
23
22
21
20
Id (mA)
Pout (dBm)
Power tuned data at 10GHz
12
13
14
15
16
17
18
19
20
21
22
23
24
Input Power (dBm)
Input Power (dBm)
For power tuned devices at 10GHz
Input matched for maximum gain & output load is:
Vd=12V, Idq=75mA: Rp = 31.9 Ω, Cp = 0.477pF, Γ = 0.54, θ = 141°
Vd=10V, Idq=75mA: Rp = 26.6 Ω, Cp = 0.464pF, Γ = 0.53, θ = 148°
Vd=10V, Id=75mA
11
12
13
14
15
16
17
18
19
20
Input Power (dBm)
21
22
23
24
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
60
56
52
48
44
40
36
32
28
24
20
16
12
8
4
0
Vd=12V, Id=75mA
Vd=10V, Id=75mA
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Input Power (dBm)
For efficiency tuned devices at 10GHz:
Input matched for maximum gain & output load is:
Vd=12V, Idq=75mA: Rp = 55.6 Ω, Cp = 0.505pF, Γ = 0.96, θ = 113°
Vd=10V, Idq=75mA: Rp = 49.0 Ω, Cp = 0.539pF, Γ = 0.64, θ = 131°
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
4
PAE (%)
320
300
280
260
240
220
200
180
160
140
120
100
80
60
Vd=12V, Id=75mA
Gain (dB)
33
32
31
30
29
28
27
26
25
24
23
22
21
20
Id (mA)
Pout (dBm)
Efficiency tuned data at 10GHz
Advance Product Information
June 8, 2005
TGF2021-01
Linear Model for 1mm Unit pHEMT cell
Rdg
Lg
Rg
Cdg
Rd
Ld
Gate
Drain
Cgs
+
Rds
vi
Rgs
Ri
Cds
gm vi
-
8QLWS+(07FHOO
5HIHUHQFH3ODQH
Rp, Cp
Ls
Rs
Source
Gate
Drain
UPC
Source
Source
Source
L - via = 0.0135 nH (2x)
UPC = 1mm Unit pHEMT Cell
MODEL
PARAMETER
Vd = 8V
Idq = 75mA
Vd = 8V
Idq = 100mA
Vd = 8V
Idq = 125mA
Vd = 10V
Idq = 75mA
Vd = 10V
Idq = 100mA
Vd = 12V
Idq = 75mA
UNITS
Rg
0.45
0.45
0.45
0.45
0.450
0.45
Ω
Rs
0.14
0.14
0.14
0.17
0.160
0.19
Ω
Rd
0.41
0.43
0.46
0.41
0.450
0.410
Ω
gm
0.310
0.318
0.314
0.296
0.303
0.286
S
Cgs
2.39
2.58
2.70
2.61
2.74
2.72
pF
1.22
1.19
1.20
1.24
1.23
1.27
Ω
Cds
0.20
0.201
0.201
0.198
0.199
0.196
pF
Rds
149.1
152.3
158.8
171.8
173.7
187.9
Ω
Cgd
0.115
0.107
0.101
0.101
0.098
0.096
pF
Tau
6.29
6.63
6.99
7.19
7.410
7.79
pS
0.009
0.009
0.009
0.009
0.010
0.010
nH
Lg
0.089
0.089
0.089
0.089
0.089
0.089
Ld
0.120
0.120
0.120
0.120
0.120
0.120
Rgs
33000
33000
35100
28900
35700
24400
Ω
Rgd
349000
425000
405000
305000
366000
238000
Ω
Ri
Ls
nH
nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
5
Advance Product Information
June 8, 2005
Unmatched S-parameters for 1 mm pHEMT
TGF2021-01
Bias Conditions: Vd = 12V, Idq = 75mA
Frequency s11
s11 ang
s21
s21 ang
s12
s12 ang
s22
s22 ang
(GHz)
dB
deg
dB
deg
dB
deg
dB
deg
0.5
-0.270
-61.01
25.258
145.86
-33.563
57.93
-5.656
-27.36
1
-0.569
-99.70
22.646
124.02
-30.161
38.19
-7.703
-43.13
1.5
-0.733
-121.84
20.206
110.84
-29.091
27.10
-9.305
-51.41
2
-0.817
-135.39
18.158
101.98
-28.656
20.33
-10.338
-56.61
2.5
-0.862
-144.39
16.443
95.34
-28.452
15.79
-10.943
-60.67
3
-0.889
-150.81
14.983
89.97
-28.353
12.52
-11.253
-64.34
3.5
-0.904
-155.63
13.718
85.36
-28.308
10.03
-11.362
-67.88
4
-0.914
-159.42
12.603
81.26
-28.295
8.05
-11.336
-71.37
4.5
-0.921
-162.50
11.609
77.50
-28.303
6.43
-11.218
-74.81
5
-0.924
-165.08
10.711
73.99
-28.326
5.07
-11.036
-78.20
5.5
-0.926
-167.27
9.894
70.66
-28.360
3.91
-10.811
-81.53
6
-0.927
-169.19
9.142
67.48
-28.403
2.90
-10.558
-84.79
6.5
-0.927
-170.88
8.447
64.40
-28.455
2.03
-10.287
-87.98
7
-0.926
-172.41
7.801
61.42
-28.512
1.26
-10.005
-91.08
7.5
-0.924
-173.79
7.196
58.51
-28.576
0.59
-9.718
-94.10
8
-0.922
-175.06
6.627
55.67
-28.644
0.01
-9.430
-97.04
8.5
-0.920
-176.24
6.090
52.87
-28.717
-0.50
-9.143
-99.90
9
-0.917
-177.33
5.582
50.13
-28.794
-0.94
-8.859
-102.69
9.5
-0.914
-178.37
5.099
47.42
-28.874
-1.31
-8.579
-105.42
10
-0.911
-179.34
4.639
44.75
-28.958
-1.61
-8.306
-108.07
10.5
-0.907
179.73
4.198
42.12
-29.044
-1.85
-8.039
-110.67
11
-0.903
178.84
3.777
39.51
-29.133
-2.03
-7.779
-113.20
11.5
-0.899
177.99
3.372
36.93
-29.223
-2.15
-7.526
-115.68
12
-0.895
177.17
2.982
34.38
-29.315
-2.20
-7.280
-118.11
12.5
-0.891
176.37
2.606
31.85
-29.407
-2.21
-7.042
-120.49
13
-0.886
175.61
2.242
29.35
-29.500
-2.15
-6.811
-122.83
13.5
-0.882
174.86
1.890
26.87
-29.592
-2.03
-6.587
-125.12
14
-0.877
174.13
1.549
24.41
-29.684
-1.86
-6.371
-127.37
14.5
-0.872
173.42
1.218
21.97
-29.774
-1.63
-6.161
-129.57
15
-0.867
172.72
0.896
19.55
-29.863
-1.35
-5.959
-131.75
15.5
-0.862
172.04
0.582
17.14
-29.949
-1.01
-5.762
-133.88
16
-0.857
171.37
0.276
14.76
-30.031
-0.62
-5.573
-135.98
16.5
-0.852
170.72
-0.022
12.39
-30.111
-0.18
-5.389
-138.05
17
-0.847
170.07
-0.314
10.04
-30.185
0.31
-5.212
-140.09
17.5
-0.842
169.43
-0.600
7.70
-30.256
0.85
-5.040
-142.09
18
-0.837
168.80
-0.880
5.38
-30.320
1.43
-4.874
-144.07
18.5
-0.832
168.18
-1.155
3.08
-30.379
2.06
-4.713
-146.02
19
-0.827
167.57
-1.424
0.79
-30.431
2.72
-4.557
-147.94
19.5
-0.821
166.96
-1.689
-1.49
-30.476
3.42
-4.407
-149.83
20
-0.816
166.36
-1.950
-3.75
-30.515
4.14
-4.261
-151.70
20.5
-0.811
165.77
-2.206
-5.99
-30.545
4.89
-4.120
-153.55
21
-0.806
165.18
-2.459
-8.23
-30.568
5.67
-3.984
-155.37
21.5
-0.801
164.60
-2.709
-10.45
-30.582
6.46
-3.852
-157.16
22
-0.796
164.02
-2.955
-12.65
-30.588
7.26
-3.724
-158.94
22.5
-0.791
163.44
-3.198
-14.85
-30.586
8.07
-3.600
-160.69
23
-0.786
162.87
-3.439
-17.03
-30.576
8.89
-3.479
-162.42
23.5
-0.781
162.31
-3.677
-19.21
-30.557
9.70
-3.363
-164.12
24
-0.776
161.75
-3.913
-21.37
-30.530
10.51
-3.250
-165.81
24.5
-0.771
161.19
-4.147
-23.52
-30.495
11.30
-3.141
-167.48
25
-0.766
160.63
-4.379
-25.66
-30.453
12.09
-3.035
-169.13
25.5
-0.761
160.08
-4.609
-27.79
-30.404
12.85
-2.932
-170.75
26
-0.756
159.53
-4.837
-29.91
-30.347
13.59
-2.833
-172.36
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
6
Advance Product Information
June 8, 2005
TGF2021-01
Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
7
Advance Product Information
June 8, 2005
TGF2021-01
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use flux
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 °C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
8