PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features ■ ■ ■ ■ Two field effect transistors in a single package Low noise Interchangeability of drain and source connections High gain. 1.3 Applications ■ AM input stage in car radios ■ VHF amplifiers ■ Oscillators and mixers. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - ±25 V Per FET VDS drain-source voltage VGSoff gate-source cut-off voltage VDS = 10 V; ID = 1 µA −2 - −6.5 V IDSS drain current VGS = 0 V; VDS = 10 V 24 - 60 mA Ptot total power dissipation Ts ≤ 90 °C - - 190 mW yfs forward transfer admittance VDS = 10 V; ID = 10 mA 10 - - mS PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor 2. Pinning information Table 2: Discrete pinning information Pin Description 1 source (1) 2 source (2) 3 gate (2) 4 drain (2) 5 drain (1) 6 gate (1) Simplified outline 6 1 5 Symbol 4 2 3 6 5 1 3 4 2 sym034 SOT363 3. Ordering information Table 3: Ordering information Type number PMBFJ620 Package Name Description Version - plastic surface mounted package; 6 leads SOT363 4. Marking Table 4: Marking Type number Marking code [1] PMBFJ620 A8* [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 2 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per FET VDS drain-source voltage - ±25 V VGSO gate-source voltage open drain - −25 V VGDO drain-gate voltage open source - −25 V IG forward gate current (DC) - 50 mA Ptot total power dissipation - 190 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Ts ≤ 90 °C 6. Thermal characteristics Table 6: Symbol Rth(j-s) [1] Thermal characteristics Parameter Conditions thermal resistance from junction single loaded to soldering points double loaded Typ Unit [1] 315 K/W [1] 160 K/W Ts is the temperature at the soldering point of the gate pins, see Figure 1. 001aaa742 400 (1) Ptot (mW) 300 200 (2) 100 0 0 50 100 150 200 Ts (°C) (1) Double loaded. (2) Single loaded. Fig 1. Power derating curve. 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 3 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor 7. Static characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 V −25 - - V VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 10 V −2 - −6.5 V VGSS gate-source forward voltage IG = 1 mA; VDS = 0 V - - 1 V IDSS drain-source leakage current VDS = 10 V; VGS = 0 V 24 - 60 mA IGSS gate-source leakage current VGS = −15 V; VDS = 0 V - - −1 nA RDSon drain-source on-state resistance VGS = 0 V; VDS = 100 mV - 50 - Ω yfs common source forward transfer admittance ID = 10 mA; VDS = 10 V 10 - - mS yos common source output admittance ID = 10 mA; VDS = 10 V - - 250 µS Per FET 8. Dynamic characteristics Table 8: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit input capacitance VDS = 10 V; VGS = −10 V; f =1 MHz - 3 5 pF VDS = 10 V; VGS = 0 V; Tamb = 25 °C - 6 - pF Per FET Ciss Crss reverse transfer capacitance VDS = 0 V; VGS = −10 V; f = 1 MHz - 1.3 2.5 pF gis common source input conductance VDS = 10 V; ID = 10 mA; f = 100 MHz - 200 - µS VDS = 10 V; ID = 10 mA; f = 450 MHz - 3 - mS gfs common source transfer conductance VDS = 10 V; ID = 10 mA; f = 100 MHz - 13 - mS VDS = 10 V; ID = 10 mA; f = 450 MHz - 12 - mS grs common source reverse conductance VDS = 10 V; ID = 10 mA; f = 100 MHz - −30 - µS VDS = 10 V; ID = 10 mA; f = 450 MHz - −450 - µS gos common source output conductance VDS = 10 V; ID = 10 mA; f = 100 MHz - 150 - µS VDS = 10 V; ID = 10 mA; f = 450 MHz - 400 - µS Vn equivalent input noise voltage VDS = 10 V; ID = 10 mA; f = 100 Hz - 6 - nV/√Hz 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 4 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor mcd220 50 IDSS (mA) mcd219 20 yfs (mS) 40 16 30 12 20 8 10 4 0 0 −1 −2 −3 0 −4 VGSoff (V) 0 VDS = 10 V; Tj = 25 °C. −2 −4 −6 −8 VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 °C. Fig 2. Drain current as a function of gate-source cut-off voltage; typical values. Fig 3. Common source forward transfer admittance as a function of gate-source cut-off voltage; typical values. mcd221 150 mcd222 80 RDSon (Ω) gos (µS) 60 100 40 50 20 0 0 −1 −2 −3 −4 0 0 VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 °C. −2 −3 −4 VGSoff (V) VDS = 100 mV; VGS = 0 V; Tj = 25 °C. Fig 4. Common-source output conductance as a function of gate-source cut-off voltage; typical values. Fig 5. Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. 9397 750 13006 Product data sheet −1 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 5 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor mcd217 40 ID (mA) mcd214 40 VGS = 0 V ID (mA) 30 −0.5 V 30 20 −1 V 20 −1.5 V 10 10 −2 V −2.5 V 0 0 0 4 8 12 16 −4 −3 −2 −1 VDS (V) 0 VGS (V) Tj = 25 °C. VDS = 10 V; Tj = 25 °C. Fig 6. Typical output characteristics. Fig 7. Typical transfer characteristics. mcd224 4 mcd223 10 Cis (pF) Crs (pF) 8 3 6 2 4 1 2 0 −10 −8 −6 −4 −2 0 −10 0 VGS (V) VDS = 10 V; Tj = 25 °C. −6 −4 −2 0 VGS (V) VDS = 10 V; Tj = 25 °C. Fig 8. Reverse transfer capacitance as a function of gate-source voltage; typical values. Fig 9. Input capacitance as a function of gate-source voltage; typical values. 9397 750 13006 Product data sheet −8 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 6 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor mcd229 103 ID (µA) 102 10 1 10−1 10−2 10−3 −2.5 −2.0 −1.5 −1.0 −0.5 0 VGS (V) VDS = 10 V; Tj = 25 °C. Fig 10. Drain current as a function of gate-source voltage; typical values. mcd230 −104 ID = 10 mA IGSS (pA) −103 1 mA −102 100 µA −10 −1 IGSS −10−1 0 4 8 12 16 VDG (V) Tj = 25 °C. Fig 11. Gate current as a function of drain-gate voltage; typical values. 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 7 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor mcd231 104 IGSS (pA) 103 102 10 1 10−1 −25 25 75 125 175 Tj (°C) Fig 12. Gate current as a function of junction temperature; typical values. 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 8 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor mcd228 100 mcd227 100 gis, bis (mS) gfs, −bfs (mS) bis 10 gfs 10 gis 1 0.1 10 100 −bfs f (MHz) 1 10 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 °C. 100 f (MHz) VDS = 10 V; ID = 10 mA; Tamb = 25 °C. Fig 13. Input admittance as a function of frequency; typical values. Fig 14. Forward transfer admittance as a function of frequency; typical values. mcd226 102 1000 mcd225 100 −brs, −grs (mS) bos, gos (mS) 10 10 − brs 1 10−1 bos 1 − grs gos 10−2 10 100 f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 °C. 0.1 10 f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 °C. Fig 15. Reverse transfer admittance as a function of frequency; typical values. Fig 16. Output admittance as a function of frequency; typical values. 9397 750 13006 Product data sheet 100 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 9 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor 9. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 17. Package outline. 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 10 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor 10. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes PMBFJ620_1 20040511 Product data - 9397 750 13006 - 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 11 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13006 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 11 May 2004 12 of 13 PMBFJ620 Philips Semiconductors Dual N-channel field-effect transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 May 2004 Document order number: 9397 750 13006 Published in The Netherlands