TOREX XP134A01A9SR

XP134A01A9SR
Power MOS FET
◆ P-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance: 0.19Ω MAX
◆ Ultra High-Speed Switching
◆ SOP-8 Package
◆ Two FET Devices built-in
■ Applications
■ General Description
■ Features
The XP134A01A9SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance: Rds(on)=0.12Ω(Vgs=-10V)
Rds(on)=0.19Ω(Vgs=-4.5V)
Ultra high-speed switching
Operational Voltage: -4.5V
High density mounting: SOP-8
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems
u
■ Pin Configuration
■ Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
S1
Source
2
G1
Gate
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
3
S2
Source
D2
4
G2
Gate
5~6
D2
Drain
7~8
D1
Drain
G2
4
5
SOP-8
(TOP VIEW)
■ Absolute Maximum Ratings
■ Equivalent Circuit
1
8
2
7
3
6
4
5
P-Channel MOS FET
(2 devices built-in)
Ta=25˚C
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Vdss
-30
V
Gate-Source Voltage
Vgss
±20
V
Drain Current (DC)
Id
-3.5
A
Drain Current (Pulse)
Idp
-10
A
Reverse Drain Current
Idr
-3.5
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
-55~150
˚C
Note: When implemented on a glass epoxy PCB
421
XP134A01A9SR
Power MOS FET
■ Electrical Characteristics
DC characteristics
Ta=25:
PARAMETER
Drain Cut-off Current
SYMBOL
Idss
CONDITIONS
Vds=-30V, Vgs=0V
Gate-Source Leakage Current
Igss
Gate-Source Cut-off Voltage
Vgs(off)
Vgs=±20V, Vds=0V
Id=-1mA, Vds=-10V
MIN
TYP
-1.0
MAX
-10
UNITS
µA
±1
µA
V
Ω
-2.5
0.12
0.19
Rds(on)
Id=-2A, Vgs=-10V
Id=-2A, Vgs=-4.5V
0.095
0.15
Forward Transfer Admittance
(note)
Yfs
Id=-2A, Vds=-10V
4
Body Drain Diode
Forward Voltage
Vf
If=-3.5A, Vgs=0V
-0.85
-1.1
V
SYMBOL
CONDITIONS
TYP
MAX
UNITS
Drain-Source On-state
Resistance (note)
Ω
S
Note: Effective during pulse test.
Dynamic characteristics
PARAMETER
Ta=25:
Input Capacitance
Ciss
Output Capacitance
Coss
Feedback Capacitance
Crss
MIN
Vds=-10V, Vgs=0V
f=1MHz
600
pF
350
pF
pF
110
u
Switching characteristics
Ta=25:
PARAMETER
SYMBOL
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
Fall Time
td (off)
tf
CONDITIONS
MIN
Vgs=-5V, Id=-2A
Vdd=-10V
TYP
MAX
UNITS
15
ns
25
ns
25
15
ns
ns
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
422
SYMBOL
CONDITIONS
Rth (ch-a)
Implement on a glass epoxy
resin PCB
MIN
TYP
62.5
MAX
UNITS
:/W
■ Electrical Characteristics
Drain Current vs. Drain /Source Voltage
Pulse Test, Ta=25:
-10
Pulse Test, Vds=-10V
-10
-4.5V
-5V
-4V
-8
-8
-10V
Drain Current:Id (A)
Drain Current:Id (A)
Drain Current vs. Gate/Source Voltage
-6
-3.5V
-4
-3V
-2
-6
-4
Topr＝25℃
-2
Vgs＝-2.5V
125℃
0
0
-1
-2
-3
-4
-5
0
-1
Drain/Source On-State Resistance
vs. Gate/Source Voltage
-3
-5
Pulse Test, Ta=25:
Drain/Source On-State Resistance
:Rds (on) (Ω)
1.00
0.3
-3.5A
Id＝-2A
-4
Drain/Source On-State Resistance
vs. Drain Current
Pulse Test, Ta=25:
0.4
Drain /Source On-State Resistance
:Rds (on) (Ω)
-2
Gate/Source Voltage:Vgs (V)
Drain/Source Voltage:Vds (V)
0.2
0.1
0
u
Vgs＝-4.5V
0.10
-10V
0.01
0
-2
-4
-6
-8
-10
0
-2
-4
Gate/Source Voltage:Vgs (V)
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
0.3
Id＝-3.5A
0.2
-2A
Vgs＝-4.5V
-2A,-3.5A
0.1
-8
-10
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Pulse Test
0.4
-10V
0
-60
-6
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
Drain/Source On-State Resistance
:Rds (on) (Ω)
-55℃
0
Vds=-10V, Id=-1mA
1
0.5
0
-0.5
-1
-30
0
30
60
90
120
Ambient Temperature:Topr (˚C)
150
-60
-30
0
30
60
90
120
150
Ambient Temperature:Topr (˚C)
423
XP134A01A9SR
Power MOS FET
■ Electrical Characteristics
Drain/Source Voltage vs. Capacitance
Vgs=0V, f=1MHz
1000
Ciss
Coss
Crss
100
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1%
1000
Switching Time:t (ns)
10000
Capacitance:Ciss, Coss, Crss (pF)
Switching Time vs. Drain Current
tf
100
td（off）
tr
td（on）
10
10
0
-10
-20
-0.1
-30
-1
Drain/Source Voltage:Vds (V)
Reverse Drain Current vs. Source/Drain Voltage
Gate/Source Voltage vs. Gate Charge
Vds=-10V, Id=-3.5A
Pulse Test
-10
Reverse Drain Current:Idr (A)
u
Gate/Source Voltage:Vgs (V)
-10
-10
Drain Current:Id (A)
-8
-6
-4
-2
-8
-6
Vgs＝-4.5V
-4
0,4.5V
-2
0
0
0
5
10
15
-0.2
0
20
-0.4
-0.6
-0.8
Source/Drain Voltage:Vsd (V)
Gate Charge:Qg (nc)
Standardized Transition Thermal Resistance:γs(t)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=62.5˚C/W, (Implemented on a glass epoxy PCB)
10
1
Single pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
Pulse Width:PW (sec)
424
1
10
100
-1