VISHAY DG485DJ

DG485
Vishay Siliconix
Octal Analog Switch Array
Low Signal Distortion
Devices Can Be Chained for System
Expansion
Reduced Board Space
Reduced Switch Errors
Reduced Power Supply
Requirements
Simple Interfacing
Audio Switching and Routing
Audio Teleconferencing
Data Acquisition and Industrial
Process Control
Battery Powered Remote Systems
Automotive, Avionics and ATE
Systems
Summing Amplifiers
Low On-Resistance: 55 Rail-to-Rail Analog Input Range
Serial Interface
Low-Power—PD: 35 nW
TTL and CMOS Compatible
Any Combination of 8 SPST to the
Output
High Speed—tON: 170 ns
The DG485 is an analog switch array consisting of eight SPST
switches connected to a common output. This device may be
used as an 8-channel multiplexer in serial control applications.
Any, all or none of the eight switches may be closed at any
given time. Combining low on-resistance (rDS(on) 55 , typ.)
and fast switching (tON: 170 ns, typ.), the DG485 is ideally
suited for data acquisition, process control, communication,
and avionic applications.
Control data is input serially into the shift register with each
clock pulse. The shift register contents can be latched-in (via
LD) at any point into an octal latch which in turn controls all
switches. RS resets the shift register, forcing all latch inputs to
a low condition (all switches off). The serial input (DIN) and
serial output (DOUT) allow daisy chaining of multiple arrays for
large systems.
Built on the Vishay Siliconix high voltage silicon gate process
the DG485 has a wide 44-V power supply voltage rating. An
epitaxial layer prevents latchup.
Each channel conducts equally well in either direction when on
and blocks up to rail-to-rail voltages when off.
For additional information please refer to application note
AN204.
VL
LD
NC
RS
3
2
1
20 19
LD
1
18
VL
2
17
S4
3
16
D
S4
4
18
D
S3
4
15
S5
S3
5
17
S5
S2
6
16
S6
S1
7
15
S7
V+
8
14
S8
DIN
8
CLK
9
Shift Register
Latches
12
S8
11
V–
10
DOUT
Shift Register/Latches
9
10 11 12 13
V–
7
13
S7
NC
6
S6
DOUT
V+
14
D IN
S1
5
GND
CLK
S2
RS
GND
PLCC and LCC
Dual-In-Line
Top View
Top View
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
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DG485
Vishay Siliconix
TRUTH TABLES AND ORDERING INFORMATION
TRUTH TABLEĊDUALĆINĆLINE PACKAGE
RS
DIN
D1
Dn
1
0
0
1
1
1
0
CLK*
X
TRUTH TABLEĊPLCC & LCC PACKAGES
LD*
Dn
Ln
SWn
Dn-1
0
0
OFF
1
Dn-1
1
1
ON
X
D1
Dn (No Change)
Dn
Ln
(No Change)
X
0
0
*LD Input Level Triggered
*CLK Input Edge Triggered
ORDERING INFORMATION
Temp Range
Package
Part Number
18-Pin Plastic DIP
DG485DJ
20-Pin PLCC
DG485DN
–40 to 85_C
–55 to 125_C
LCC-20
DG485AZ/883
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AZ Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C
(DJ, DN Suffix) . . . . . . . . . . . . . . –65 to 125_C
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Power Dissipation (Package)b
18-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
20-Pin PLCC, LCCd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW
Notes:
a. Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/_C above 75_C.
d. Derate 10 mW/_C above 75_C.
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
DG485
Vishay Siliconix
Test Conditions
Unless Otherwise Specified
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
V+ = 13.5 V, V– = –13.5 V
IS = –5 mA, VD = 10 V
Room
Full
55
Room
6
Room
Full
0.01
–1
–20
1
20
–1
–10
1
10
Room
Full
0.1
–10
–200
10
200
–10
–50
10
50
V = 16.5 V VS = VD = 15.5 V
One Switch At A Time
Room
Full
0.11
–20
–500
20
500
–20
–50
20
50
V = 16.5 V, VS = VD = 15.5 V
All Switches On
Room
0.2
IIL
VIN Under Test = 0.8 V
All Other = 2.4 V
Room
Full
–0.0001
–1
–5
1
5
–1
–5
1
5
IIH
VIN Under Test = 2.4 V
All Other = 0.8 V
Room
Full
0.0001
–1
–5
1
5
–1
–5
1
5
Output Voltage
with VIN Low – DOUT
VOL
IO = 1.6 mA, V+ = 4.5 V
Full
0.25
Output Voltage
with VIN High – DOUT
VOH
IO = –80 mA, V+ = 16.5 V
VL = 4.75 V
Full
4.4
Parameter
Symbol
Typc
Mind
Maxd Mind
Maxd Unit
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Delta Drain-Source
On-Resistanceg
Switch Off
Leakage
Current
L k
C
t
Channel On
L k
Leakage
Current
C
t
VANALOG
rDS(on)
Full
DrDS(on)
IS(off)
ID(off)
ID(on)
V+ = 16.5 V,, V– = –16.5 V
VD = 15.5
V, VS = 15.5
15 5 V
15 5 V
–15
15
–15
85
125
15
V
85
125
W
%
nA
A
Input
Input Current
with VIN Low
Input Current
with VIN High
mA
Serial Data Output
0.4
0.4
V
2.7
2.7
Dynamic Characteristics
Turn-On Time
tON
VS = 10 V
See Figures 1, 8
Room
Full
170
200
275
200
275
Turn-Off Time
tOFF
VS = 10 V
See Figures 2, 3, 8
Room
Full
150
200
275
200
276
Data Setup Time
tDS
See Figures 4, 8
Room
Full
40
60
40
60
Data Hold Time
tDH
Room
Full
40
60
40
60
LOAD Hold Time
tLH
Room
Full
100
150
100
150
RESET Hold Time
tRH
Room
Full
100
150
100
150
Room
Full
40
60
40
60
RESET to CLOCK Delay
Charge Injection
Off Isolatione
Maximum
Clock Frequency
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
S Figures
See
Fi
5 8
5,
tDRC
ns
Q
VS = 0 V, CL = 1,000 pF
Any One Channel
Room
17
pC
OIRR
RL = 50 W , CL = 5 pF, f = 1 MHz
See Figure 9
Room
–75
dB
Room
10
MHz
fCLK
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DG485
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
Parameter
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Symbol
Tempb
Typc
Room
7
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
Mind
Maxd Mind
Maxd Unit
Dynamic Characteristics (Cont’d)
Source Off
Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
On-State Capacitancee
CD(on)
Vgen = 0 V,, Rgen = 0 W , f = 1 MHz
Room
43
Vgen = 0 V, Rgen = 0 W , f = 1 MHz One
Channel On
Room
53
Vgen = 0 V, Rgen = 0 W , f = 1 MHz All Channels On
Room
122
Room
Full
0.001
Room
Full
–0.001
Room
Full
0.001
Room
Full
–0.001
F
pF
Power Supplies
Positive Supply
Current
I+
Negative Supply
Current
I–
Logic Supply Current
IL
Ground Current
V+ = 16.5
V
16 5 V,
V V–
V = –16.5
16 5 V
VIN = 0 or 5 V, VL = 5.25 V
DOUT Open
IGND
3
10
3
10
–3
–10
–3
–10
3
10
3
10
–3
–10
mA
A
–3
–10
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
r DS(on) MAX – r DS(on) MIN
g. For each V : Dr
+
D
DS(on)
r
AVE
ǒ
Ǔ
DS(on)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Currents vs. Temperature
1 mA
V+ = 15 V
V– = –15 V
VL = 5 V
r DS(on)– Drain-Source On-Resistance ( W )
100 nA
rDS(on) vs. VD and Power Supply Voltage
160
I+, I–, I
GND
10 nA
IL
IPOS
1 nA
INEG
100 pA
IGND
10 pA
1 pA
0.1 pA
–50
VL = 5 V
IS = –5 mA
120
"5 V
100
80
"8 V
"10 V
60
40
20
"12 V
"20 V
"15 V
0
–30
–10
10
30
50
70
Temperature (_C)
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140
90
110
130
–20
–15
–10
–5
0
5
10
15
20
VD – Drain Voltage (V)
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
DG485
Vishay Siliconix
_ rDS(on) vs. VD and Unipolar Power Supply Voltage
r DS(on)– Drain-Source On-Resistance ( )
r DS(on)– Drain-Source On-Resistance ( )
V– = 0 V
VL = 5 V
IS = –5 mA
350
300
250
V+ = 5 V
200
150
8V
10 V
100
12 V
15 V
50
20 V
90
80
70
60
125_C
50
40
25_C
30
V+ = 15 V
V– = –15 V
VL = 5 V
IS = –5 mA
20
10
–55_C
0
0
0
2
4
6
8
10
12
14
16
18
20
–15
0
5
10
Channel On/Off Leakage Currents
vs. Analog Voltage
Channel On/Off Leakage Currents
vs. Temperature
1 mA
15
V+ = 15 V
V– = –15 V
VL = 5 V
VS or VD = – 14 V
100 nA
10 nA
20
1 nA
IS(off)
I D, I S
0
ID(off)
–20
–5
VD – Drain Voltage (V)
V+ = 15 V
V– = –15 V
VL = 5 V
40
–10
VD – Drain Voltage (V)
60
I S, I D , I S + D (pA)
rDS(on) vs. VD and Temperature
100
400
IS(off)
ID(on)
100 pA
10 pA
ID(on)
–40
ID(off)
1 pA
–60
0.1 pA
0.01 pA
–80
–15
–10
–5
0
5
10
–50
15
–30
–10
10
VD or VS – Drain or Source Voltage (V)
50
70
90
110
130
Temperature (_C)
Switching Threshold
vs. Power Supply Voltage and VL
RF Characteristics
–140
3.0
–120
5V
2.5
30
VL = 7 V
6V
–100
XTALK
OIRR
–80
(dB)
V TH (V)
2.0
1.5
–60
4V
V+ = 15 V
V– = –15 V
VL = 5 V
See Figures 9, 10
1.0
–40
0.5
–20
0
0
5
6
7
8
9
10
11
V+ Supply (V)
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
12
13
14
15
1k
10 k
100 k
1M
10 M
f – Frequency (Hz)
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DG485
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Currents vs. Switching Frequency
Source/Drain On Capacitance vs. Analog Voltage
180
10 mA
V+ = 15 V
V– = –15 V
VL = 5 V
VIN = 3 V
1 mA
In
C S, D (pF)
I+, I–, I GND
140
IL
100 mA
10 mA
V+ = 15 V
V– = –15 V
VL = 5 V
160
Ip
CD(on)
120
(All Channels On)
100
1 mA
80
100 nA
60
10 nA
40
CD(on)
(Channel 1 On Only)
100
1k
10 k
100 k
1M
–15
–10
f – Frequency (Hz)
Source/Drain Off Capacitance
vs. Analog Voltage
10
15
V+ = 15 V
V– = –15 V
VL = 5 V
CL = 1 nF
45
CD(off)
35
40
Q (pC)
C S, D (pF)
5
Charge Injection vs. Analog Voltage
V+ = 15 V
V– = –15 V
VL = 5 V
50
30
25
15
20
10
5
CS(off)
0
–15
0
55
70
60
–5
VANALOG – Analog Voltage (V)
–5
–10
–5
0
5
10
15
–15
–10
VANALOG – Analog Voltage (V)
–5
0
5
10
15
VS – Source Voltage (V)
TIMING DIAGRAMS
3V
3V
50%
50%
LD
0V
VS
VD
0V
LD
0V
VS
VD
0V
90%
Repeat for All Channels
tON
90%
tOFF
FIGURE 1. tON from LD
Repeat for All Channels
FIGURE 2. tOFF from LD
3V
50%
RS
0V
VS
VD
90%
0V
tOFF
FIGURE 3. tOFF from RS
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Document Number: 70065
S-52433—Rev. E, 06-Sep-99
DG485
Vishay Siliconix
50%
CLOCK
50%
DATA
tDH
tDS
FIGURE 4. Data Setup and Hold Time
CLOCK
RS
LOAD
tLH
tRH
tDRC
FIGURE 5. Timing Relationships
RS
DIN
CLK
LD
S1
S2
S3
S4
S5
S6
S7
S8
DOUT
S1 – S8 and DOUT are expected output with the drain connected high. The sources require pull-down of 1 k.
FIGURE 6.
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
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DG485
Vishay Siliconix
V+
S1
VL
V+
RS
RS
D1
S8
Octal
Latch
Dn
DIN
Shift
Register
CLK
CLK
Level
Shift/
Drive
V–
D8
LD
V+
D
DOUT
V+
LD
GND
V–
FIGURE 7.
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Document Number: 70065
S-52433—Rev. E, 06-Sep-99
DG485
Vishay Siliconix
+15 V
+5 V
50 V+
VS
S1
50 VL
S1
S2
50 35 pF
S7
S8
S2
VO
D
D
1 k
DG485
DG485
50 S3
CLK
50 LD
DIN
RS
V–
S8
GND
50 –15 V
FIGURE 8. Switching Time Test Circuit
FIGURE 9. Adjacent Input Crosstalk
50 S1
50 VO
DG485
S2
50 50 S8
50 FIGURE 10. Off Isolation
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
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5-9
DG485
Vishay Siliconix
f= for CLK and LD inputs of the same frequency.
The recommended phase delay of LD from CLK is
½ tLOGIC to tLOGIC:
CLK
f
tLOGIC(MIN):
80 ns at 25_C
150 ns at 125_C
V+ = 15 V
V– = –15 V
GND = 0 V
LD
tLOGIC
tLOGIC
FIGURE 11.
C1
DG485
VREF
C2
R1
IN1
RIN
DIN
DG485
R2
CLK
RF
IN2
R0
RIN
R1
R2
R7
–
–
VOUT
+
+
FIGURE 12. Multi-Function Circuit Provides Input Selection,
Gain Ranging and Filtering with One DG485
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FIGURE 13. Serial DAC Circuit
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
DG485
Vishay Siliconix
RF
V1
V2
V8
R
VOUT
–
R
+
+
CH
R
–
DG485
DG485
FIGURE 14. Summing Node Mixer
FIGURE 15. Multiplexing, Sampling Application
S1 S2
S8
DG485
D
Switch Array
Octal Latch
8085
DIN
SOD
ALE
LD
Data Bus
DOUT
S/R
CLK
To Next
Switch
Array
RS
8212
(8)
(8)
Address Bus
Decoder
8205
WR
R/S
FIGURE 16. Direct Serial Interface (8085)
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
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