SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit VGS "20 V Gate-Source Voltage –75a TC = 25_C Continuous Drain Current (TJ = 175_C) ID TC = 125_C Pulsed Drain Current –200 IAR –75 EAR 280 Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH –65 IDM mJ 250d TC = 25_C (TO-220AB and TO-263) Power Dissipation A PD TA = 25_C (TO-263)c Operating Junction and Storage Temperature Range W 3.7 TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Symbol Limit PCB Mount (TO-263)c RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 0.6 Unit _C/W Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 70772 S-05111—Rev. D, 10-Dec-99 www.vishay.com 1 SUP/SUB75P03-08 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –30 VGS(th) VDS = VGS, ID = –250 mA –1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 125_C –50 VDS = –30 V, VGS = 0 V, TJ = 175_C –150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS –3 ID(on) VDS = –5 V, VGS = –10 V VGS = –10 V, ID = –30 A 0.008 rDS(on) VGS = –10 V, ID = –30 A, TJ = 125_C 0.012 VGS = –10 V, ID = –30 A, TJ = 175_C 0.015 gfs VDS = –15 V, ID = –30 A –120 V nA mA m A 30 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 6900 VGS = 0 V, VDS = –25 V, f = 1 MHz 1850 pF 570 115 VDS = –15 V, VGS = –10 V, ID = –75 A 140 30 nC Qgd 10 td(on) 10 20 tr VDD = –15 V, RL = 0.2 W 16 30 td(off) ID ] –75 A, VGEN = –10 V, RG = 2.5 W 140 200 80 140 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is –75 Pulsed Current ISM –200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = –75 A, VGS = 0 V trr IRM(REC) Qrr IF = –75 A, di/dt = 100 A/ms m –1.1 –1.4 V 60 100 ns 2.5 5 A 0.008 0.016 mC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70772 S-05111—Rev. D, 10-Dec-99 SUP/SUB75P03-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 150 VGS = 10, 9, 8, 7, 6 V 4V TC = –55_C 25_C 120 I D – Drain Current (A) I D – Drain Current (A) 160 120 5V 80 40 125_C 90 60 30 3V 0 0 2 4 6 8 0 0.0 10 1.5 VDS – Drain-to-Source Voltage (V) 3.0 4.5 6.0 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.008 TC = –55_C r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) VGS = 10 V 25_C 80 125_C 60 40 20 0 0.006 VGS = 20 V 0.004 0.002 0.000 0 15 30 45 0 60 20 40 VGS – Gate-to-Source Voltage (V) 60 80 100 ID – Drain Current (A) Capacitance Gate Charge 20 8500 V GS – Gate-to-Source Voltage (V) C – Capacitance (pF) Ciss 6500 4500 Coss 2500 Crss 500 VDS = 15 V ID = 75 A 16 12 8 4 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 70772 S-05111—Rev. D, 10-Dec-99 30 0 30 60 90 120 150 180 210 Qg – Total Gate Charge (nC) www.vishay.com 3 SUP/SUB75P03-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.8 100 1.5 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 30 A 1.2 0.9 0.6 –50 TJ = 150_C TJ = 25_C 10 1 –25 0 25 50 75 100 125 150 175 0.0 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 100 I D – Drain Current (A) I D – Drain Current (A) 80 60 40 100 Limited by rDS(on) 100 ms 1 ms 10 10 ms 100 ms dc, 1 s TC = 25_C Single Pulse 20 0 0 25 50 75 100 125 150 175 1 0.1 TC – Case Temperature (_C) 1.0 10.0 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70772 S-05111—Rev. D, 10-Dec-99