INFINEON Q62702

BGA 427
Si-MMIC-Amplifier in SIEGET 25-Technologie
Preliminary data
3
• Cascadable 50 Ω-gain block
4
• Unconditionally stable
• Gain |S21 |2 = 18,5 dB at 1.8 GHz (appl.1)
gain |S21 |2 = 22 dB at 1.8 GHz (appl.2)
2
IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA)
1
• Noise figure NF = 2.2 dB at 1.8 GHz
VPS05605
• typical device voltage VD = 2 V to 5 V
3
+V
• Reverse isolation < 35 dB (appl.2)
4
OUT
Circuit Diagram
IN
1
2
GND
EHA07378
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BGA 427
BMs
1, IN
Q62702-G0067
2, GND
Package
3, +V
4, Out
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Device current
ID
25
mA
Device voltage
VD,+V
Total power dissipation, T S ≤ tbd °C
Ptot
150
mW
RF input power
PRFin
-10
dBm
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ...+150
Storage temperature
T stg
-65 ...+150
6
V
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ tbd
K/W
1) TS is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group
Semiconductor Group
11
Au 1998-11-01
-11-1998
BGA 427
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
min.
AC characteristics VD = 3 V, Zo = 50W, Testfixture Appl..1
Insertion power gain
|S21| 2
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
typ.
Unit
max.
dB
-
27
22
28.5
22
-
-
1.9
2
2.2
-
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
S12
Intercept point at the output
f = 1.8 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
IP 3out
-
+7
-
dBm
RL in
-
>12
-
dB
RL out
-
>9
-
NF
Typical configuration
Appl.2
Appl.1
+V
+V
100 pF
RF OUT
1 nF
10 nF
100 nH
2.2 pF
BGA 427
100 pF
100 pF
100 pF
RF IN
RF OUT
GND
EHA07379
BGA 427
100 pF
RF IN
GND
EHA07380
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
to provide a low impedance path! (appl.1)
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground!
Semiconductor Group
Semiconductor Group
22
Au 1998-11-01
-11-1998
BGA 427
S-Parameters at TA = 25 °C, (Testfixture, Appl.1)
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
0.1382
0.1179
0.1697
0.1824
0.1782
0.176
0.1827
0.1969
0.2021
0.2116
0.2437
0.258
-38.3
-16
-20.8
-56.9
-69.1
-80.6
-133.5
-156.1
-162.8
-167.7
172.8
153.3
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
+V
BGA 427-chip
including parasitics
13
R2
T2
R1
IN
R3
C’-E’Diode
14
C1
11
C P3
T1
C P1
C P4
C P5
R4
C P2
12
GND
Semiconductor Group
Semiconductor Group
EHA07381
33
OUT
T1
T2
R1
R2
R3
R4
C1
CP1
CP2
CP3
CP4
T501
T501
14.5kΩ
280Ω
2.4kΩ
170Ω
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
0.1pF
CP5
C’-E’-diode T1
Au 1998-11-01
-11-1998
BGA 427
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
0.21024
aA
BF =
83.23
-
NF =
1.0405
-
VAF =
39.251
V
IKF =
0.16493
A
ISE =
15.761
fA
NE =
1.7763
-
BR =
10.526
-
NR =
0.96647
-
VAR =
34.368
V
IKR =
0.25052
A
ISC =
0.037223
fA
NC =
1.3152
-
RB =
15
Ω
IRB =
0.21215
mA
RBM =
1.3491
Ω
RE =
1.9289
RC =
0.12691
Ω
CJE =
3.7265
fF
VJE =
0.70367
V
MJE =
0.37747
-
TF =
4.5899
ps
XTF =
0.3641
-
VTF =
0.19762
V
ITF =
1.3364
mA
PTF =
0
deg
CJC =
96.941
fF
VJC =
0.99532
V
MJC =
0.48652
-
XCJC =
0.08161
-
TR =
1.4935
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.99469
-
TNOM
300
K
-
RS =
20
Ω
LBI =
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
C1 =
C2 =
C3 =
L1 =
L2 =
0.36
0.4
0.3
0.15
0.36
0.4
95
6
132
28
88
8
0.6
0.4
nH
nH
nH
nH
nH
nH
fF
fF
fF
fF
fF
fF
nH
nH
C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
N=
1.02
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
L2
OUT
C1
C3
L1
C CB
C2
14
L BO
L BI
IN
11
BGA 427
Chip
12
C BE
13
L CI
L CO
+V
C’-E’Diode
C CE
L EI
L EO
GND
EHA07382
Valid up to 3GHz
Extracted on behalf of SIEMENS Small Signal Semiconductors by
Institut für Mobil-und Satellitentechnik (IMST)
 1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
Semiconductor Group
44
Au 1998-11-01
-11-1998
BGA 427
Insertion power gain |S 21| 2 = f (f)
Noise figure NF = f (f)
VD, I D = parameter
VD,ID = parameter
5.0
35
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
dB
4.0
25
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
3.5
NF
|S 21|2
dB
20
3.0
2.5
15
2.0
1.5
10
1.0
5
0.5
0 -1
10
10
0
GHz
10
0.0 -1
10
1
f
10
0
GHz
10
1
f
Intercept point at the output
IP 3out = f (f)
VD,ID = parameter
25
IP3out
dBm
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
15
10
5
0 -1
10
10
0
GHz
10
1
f
Semiconductor Group
Semiconductor Group
55
Au 1998-11-01
-11-1998