东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃） Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 2. BASE 3. COLLECTOR 1 2 3 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA， IC=0 8 V Collector cut-off current ICBO VCB=60 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5 V , 0.1 μA DC current gain hFE VCE= 2 V, IC=50m A Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50 mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50m A 1.1 V fT VCE=10V, IC= 50mA Transition frequency IC=0 40 400 30 MHz CLASSIFICATION OF h FE Rank R O Y G Range 40-80 70-140 120-240 200-400 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015