Silicon Junction FETs (Small Signal) 2SK65 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm 4.5±0.1 2.0±0.2 0.7 1.0 4.0±0.2 ■ Features ● Diode is connected between gate and source ● Low noise voltage Ratings Unit Drain to Source voltage Parameter VDSO Symbol 12 V Gate to Drain voltage VGDO −12 V Drain to Source current IDSO 2 mA Drain to Gate current IDGO 2 mA Gate to Source current IGSO 2 mA Allowable power dissipation Operating ambient temperature PD 20 mW Topr −10 to +70 °C Storage temperature Tstg −20 to +150 °C 10.5±0.5 ■ Absolute Maximum Ratings (Ta = 25°C) 0.45±0.05 2.54 1 2 0.8±0.1 3 1: Drain 2: Gate 3: Source S Type Package ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain to Source cut-off current IDSS* Mutual conductance gm Noise figure NV RS = 2.2kΩ ± 1%, f = 1kHz 300 typ VDS = 4.5V, RS = 2.2kΩ ± 1% VDS = 4.5V, RS = 2.2kΩ ± 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 12V, RS = 2.2kΩ ± 1% GV2* CG = 10pF, eG = 100mV, f = 70Hz VDS = 1V, RS = 2.2kΩ ± 1% CG = 10pF, eG = 100mV, f = 70Hz max Unit 0.8 mA µS 500 4 CG = 10pF, A-curve GV3* * min 0.04 VDS = 4.5V, VGS = 0 GV1* Voltage gain Conditions VDS = 4.5V, VGS = 0, RS = 2.2kΩ ± 1% µV −10 dB −9.5 dB −11 dB IDSS rank classification and GV value Runk P Q IDSS (mA) 0.04 to 0.2 0.15 to 0.8 GV1 (dB) > −13 > −12 GV2 (dB) > −12 > −11 ∆| GV1 − GV2 | (dB) <3 <3 1 Silicon Junction FETs (Small Signal) PD Ta ID VDS 1.2 700 16 12 8 4 600 VGS=0V 500 – 0.1V 400 – 0.2V 300 – 0.3V 200 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 IDSS=0.9mA Mutual conductance gm (mS) 1.0 0.8 0.6 0.3mA 0.4 0.1mA 0.2 0 –1.0 VDS=4.5V f=1kHz Ta=25˚C 1.0 – 0.6 – 0.4 – 0.2 0.4 10kHz 8 0.4 0.6 0.8 1.0 Drain current ID (mA) 12 10 8 Rg=10kΩ 6 4 100kΩ 2 1000kΩ 0.3 1 3 10 30 100 Signal source resistance Rg (kΩ) 1kHz 8 0 0.01 0.03 0.1 0.3 1 3 Frequency f (KHz) 0 0.2 0.4 0.6 0.8 Drain current ID (mA) VDS=4.5V ID=300µA Ta=25˚C 4 0 0.1 f=100Hz 12 0 0.2 14 1kHz 16 4 NF f f=100Hz 0 10kHz 0.2 16 16 – 0.4 VDS=4.5V Rg=100kW Ta=25˚C 20 0.6 0 Noise figure NF (dB) 20 – 0.8 IDSS=0.9mA 0.1mA 0 VDS=4.5V ID=300µA Ta=25˚C –1.2 NF ID 0.3mA NF Rg 24 –1.6 Gate to source voltage VGS (V) 24 0 – 0.8 0.4 0 –2.0 12 0.8 Gate to source voltage VGS (V) 12 10 25˚C g m ID 1.2 VDS=4.5V f=1kHz Ta=25˚C 8 Ta=–25˚C Drain to source voltage VDS (V) gm VGS 1.2 6 0.6 0.2 – 0.5V – 0.6V – 0.7V Noise figure NF (dB) 40 0.8 75˚C – 0.4V 100 0 20 Drain current ID (mA) 1.0 Drain current ID (µA) 20 0 2 VDS=4.5V Ta=25˚C 0 Mutual conductance gm (mS) ID VGS 800 Topr max. Allowable power dissipation PD (mW) 24 Noise figure NF (dB) 2SK65 10 1.0