PANASONIC 2SK662

Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
■ Features
1.25±0.1
0.425
0.3–0
0.65
1.3±0.1
1
0.65
2.0±0.2
+0.1
0.425
● High mutual conductance gm
● Low noise type
● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
3
2
VDSX
30
V
Gate to Drain voltage
VGDO
−30
V
Drain current
ID
20
mA
Gate current
IG
10
mA
Allowable power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
+0.1
Drain to Source voltage
0.15–0.05
Unit
0 to 0.1
Ratings
0.7±0.1
Symbol
0.9±0.1
Parameter
0.2
■ Absolute Maximum Ratings (Ta = 25°C)
1: Source
2: Drain
3: Gate
0.2±0.1
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol (Example): 1O
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
IDSS
*
Gate to Source leakage current
IGSS
VGS = −30V, VDS = 0
Gate to Source cut-off voltage
VGSC
VDS = 10V, ID = 10µA
Mutual conductance
gm
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
Noise figure
*
NV
Conditions
VDS = 10V, VGS = 0
min
0.5
− 0.1
VDS = 10V, ID = 0.5mA, f = 1kHz
4
VDS = 10V, VGS = 0, f = 1kHz
4
VDS = 10V, VGS = 0, f = 1MHz
VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
typ
max
Unit
12
mA
−100
nA
−1.5
V
mS
14
pF
3.5
pF
60
mV
IDSS rank classification
Runk
P
Q
R
IDSS (mA)
0.5 to 3
2 to 6
4 to 12
Marking Symbol
1OP
1OQ
1OR
1
Silicon Junction FETs (Small Signal)
2SK662
PD  Ta
ID  VDS
8
9.6
7
200
8.0
120
80
6
VGS=0V
5
4
– 0.1V
3
– 0.2V
2
– 0.3V
40
1
4.8
3.2
Ta=75˚C
25˚C
– 0.4V
–25˚C
40
60
80 100 120 140 160
0
2
4
8
10
g m  ID
Mutual conductance gm (mS)
16
12
8
IDSS=5mA
4
– 0.2
IDSS=5mA
VDS=10V
Ta=25˚C
16
12
2mA
8
4
0
0
Gate to source voltage VGS (V)
1
2
3
4
5
6
7
8
Drain current ID (mA)
Crss  VDS
12
VGS=3V
f=1MHz
Ta=25˚C
Noise figure NF (dB)
3
2
1
VDS=10V
ID=5.2mA
Ta=25˚C
10
4
8
6
4
Rg=500Ω
2
1kΩ
0
1
3
10
30
100
Drain to source voltage VDS (V)
– 0.2
0
0
10
102
103
104
Frequency f (Hz)
VGS=–3V
f=1MHz
Ta=25˚C
8
6
Ciss
4
Coss
2
0
1
3
10
30
100
Drain to source voltage VDS (V)
NF  f
5
– 0.4
Ciss, Coss  VDS
0
– 0.4
– 0.6
10
2mA
– 0.6
– 0.8
Gate to source voltage VGS (V)
20
VDS=10V
Ta=25˚C
0
– 0.8
0
–1.0
12
Drain to source voltage VDS (V)
gm  VGS
20
6
Input capacitance (Common source),
Output capacitance (Common source) Ciss,Coss (pF)
20
Ambient temperature Ta (˚C)
Reverse transfer capacitance (Common source) Crss (pF)
6.4
1.6
0
0
Mutual conductance gm (mS)
Drain current ID (mA)
160
0
2
VDS=10V
Ta=25˚C
Drain current ID (mA)
Allowable power dissipation PD (mW)
240
ID  VGS
105