MC10EP58 2:1 Multiplexer The MC10EP58 is a 2:1 multiplexer. The device is pin and functionally equivalent to the EL58 and LVEL58 devices. • • • • • • • • • • 275ps Typical Propagation Delay High Bandwidth to 3 Ghz Typical PECL mode: 3.0V to 5.5V VCC with VEE = 0V ECL mode: 0V VCC with VEE = –3.0V to –5.5V 75kΩ Internal Input Pulldown Resistors Q Output will default LOW with inputs open or at VEE ESD Protection: >4KV HBM, >200V MM Moisture Sensitivity Level 1, Indefinite Time Out of Drypack. For Additional Information, See Application Note AND8003/D Flammability Rating: UL–94 code V–0 @ 1/8”, Oxygen Index 28 to 34 Transistor Count = 41 devices http://onsemi.com 8 1 SO–8 D SUFFIX CASE 751 MARKING DIAGRAM 8 NC 1 8 HEP58 VCC ALYW Da 2 1 7 SEL 3 0 4 = Assembly Location = Wafer Lot = Year = Work Week 1 Q *For additional information, see Application Note AND8002/D MUX Db A L Y W 6 5 Q PIN DESCRIPTION VEE PIN FUNCTION Da, Db ECL Data Inputs SEL ECL Select Inputs Q, Q ECL Data Outputs Figure 1. 8–Lead Pinout (Top View) and Logic Diagram TRUTH TABLE SEL Data H L a b ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 1999 September, 1999 – Rev. 1.0 1 Package Shipping MC10EP58D SOIC 98 Units/Rail MC10EP58DR2 SOIC 2500 Tape & Reel Publication Order Number: MC10EP58/D MC10EP58 MAXIMUM RATINGS* Value Unit VEE Symbol Power Supply (VCC = 0V) Parameter –6.0 to 0 VDC VCC Power Supply (VEE = 0V) 6.0 to 0 VDC VI Input Voltage (VCC = 0V, VI not more negative than VEE) –6.0 to 0 VDC VI Input Voltage (VEE = 0V, VI not more positive than VCC) 6.0 to 0 VDC Iout Output Current 50 100 mA TA Operating Temperature Range –40 to +85 °C Tstg Storage Temperature –65 to +150 °C θJA Thermal Resistance (Junction–to–Ambient) 190 130 °C/W θJC Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W Tsol Solder Temperature (<2 to 3 Seconds: 245°C desired) 265 °C Continuous Surge Still Air 500lfpm * Maximum Ratings are those values beyond which damage to the device may occur. DC CHARACTERISTICS, ECL/LVECL (VCC = 0V; VEE = –5.5V to –3.0V) (Note 3.) –40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current (Note 1.) 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 2.) –1135 –1060 –885 –1070 –945 –820 –1010 –885 –760 mV VOL Output LOW Voltage (Note 2.) –1935 –1810 –1685 –1870 –1745 –1620 –1810 –1685 –1560 mV VIH Input HIGH Voltage Single Ended –1210 –885 –1145 –820 –1085 –760 mV VIL Input LOW Voltage Single Ended –1935 –1610 –1870 –1545 –1810 –1485 mV IIH Input HIGH Current 150 µA IIL Input LOW Current 150 D D 0.5 –150 150 0.5 –150 0.5 –150 µA NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. 1. VCC = 0V, VEE = VEEmin to VEEmax, all other pins floating. 2. All loading with 50 ohms to VCC–2.0 volts. 3. Input and output parameters vary 1:1 with VCC. http://onsemi.com 2 MC10EP58 DC CHARACTERISTICS, LVPECL (VCC = 3.3V ± 0.3V, VEE = 0V) (Note 6.) –40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current (Note 4.) 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 5.) 2165 2240 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 5.) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage Single Ended 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage Single Ended 1365 1690 1430 1755 1490 1815 mV IIH Input HIGH Current 150 µA IIL Input LOW Current 150 D D 0.5 –150 150 0.5 –150 µA 0.5 –150 NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. 4. VCC = 3.3V, VEE = 0V, all other pins floating. 5. All loading with 50 ohms to VCC–2.0 volts. 6. Input and output parameters vary 1:1 with VCC. DC CHARACTERISTICS, PECL (VCC = 5.0V ± 0.5V, VEE = 0V) (Note 9.) –40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current (Note 7.) 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 8.) 3865 3940 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 8.) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage Single Ended 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage Single Ended 3065 3390 3130 3455 3190 3515 mV IIH Input HIGH Current 150 µA IIL Input LOW Current 150 D D 0.5 –150 150 0.5 –150 0.5 –150 µA NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. 7. VCC = 5.0V, VEE = 0V, all other pins floating. 8. All loading with 50 ohms to VCC–2.0 volts. 9. Input and output parameters vary 1:1 with VCC. http://onsemi.com 3 MC10EP58 AC CHARACTERISTICS (VCC = 0V; VEE = –3.0V to –5.5V) or (VCC = 3.0V to 5.5V; VEE = 0V) –40°C Symbol Characteristic fmax Maximum Toggle Frequency (Note 10.) tPLH, tPHL Propagation Delay to Output Differential Min Typ 25°C Max Min 3.0 Typ 85°C Max Min 3.0 Typ Max 3.0 Unit GHz ps D–>Q, Q SEL–>Q, Q tSKEW Duty Cycle Skew (Note 11.) tJITTER Cycle–to–Cycle Jitter VPP Input Voltage Swing (Diff.) 170 170 250 250 350 350 190 190 5.0 TBD 150 800 275 275 375 375 5.0 20 210 210 TBD 1200 150 800 300 300 400 400 5.0 20 ps 1200 mV TBD 1200 150 800 ps tr Output Rise/Fall Times Q 60 120 190 60 130 200 70 150 220 ps tf (20% – 80%) 10. Fmax guaranteed for functionality only. VOL and VOH levels are guaranteed at DC only. 11. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays are measured from the cross point of the inputs to the cross point of the outputs. http://onsemi.com 4 MC10EP58 PACKAGE DIMENSIONS SO–8 D SUFFIX PLASTIC SOIC PACKAGE CASE 751–06 ISSUE T D A 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 5 0.25 H E M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S DIM A A1 B C D E e H h L q http://onsemi.com 5 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ MC10EP58 Notes http://onsemi.com 6 MC10EP58 Notes http://onsemi.com 7 MC10EP58 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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