Order this document by BF240/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 3 BASE 1 2 EMITTER 2 3 CASE 29–04, STYLE 21 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 25 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — — Vdc Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 40 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 100 nAdc hFE 65 — 220 — VBE(on) 0.65 0.7 0.74 Vdc fT — 600 — MHz Cre — 0.28 0.34 pF Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 1000 700 500 10 BF240 VCE = 10 V TA = 25°C 300 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) BF240 200 100 2 Cib 1 0.7 0.5 0.4 0.3 20 Cob Cre @ IE = 0 0.2 10 0.2 0.3 0.5 0.7 1 3 5 10 20 IC, COLLECTOR CURRENT (mA) 100 0.1 0.2 0.5 1 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Current–Gain — Bandwidth Product Figure 2. Capacitances 100 VCE = 10 V 50 100 MHz 20 200 100 70 50 BF240 mmhos hFE, DC CURRENT GAIN VCE = 10 V TA = 25°C 10 5 45 MHz 30 10.7 MHz 2 20 10 0.1 1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (mA) 2 3 Figure 3. DC Current Gain –100 b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA) Figure 4. b11e 2000 100 MHz VCE = 10 V –50 100 MHz 1000 –10 10.7 MHz 10.7 MHz 50 –2 2 3 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA) Figure 5. b21e 2 45 MHz 200 100 –5 –1 500 45 MHz –20 µmhos mmhos VCE = 10 V 20 470 kHz 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 Figure 6. b22e (boe) Motorola Small–Signal Transistors, FETs and Diodes Device Data BF240 10 VCE = 10 V 200 100 MHz 5 45 MHz 10.7 MHz 470 kHz f = 0.47 to 45 MHz 50 mmhos mmhos 2 1 20 10 0.5 5 0.2 0.1 VCE = 10 V 100 2 3 4 5 6 IC, COLLECTOR CURRENT (mA) 7 8 2 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) Figure 7. g11e (gie) 6 7 Figure 8. g21e (Yfe) 200 VCE = 10 V 100 MHz 100 50 45 MHz µmhos 10.7 MHz 470 kHz 20 10 5 2 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 Figure 9. g22e (goe) Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BF240 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE Motorola reserves the right to make changes without further notice to any products herein. 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