DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections VDS • High gain. DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT54 (TO-92). PIN PN4416; PN4416A PARAMETER CONDITIONS MIN. MAX. UNIT drain-source voltage PN4416 − 30 V PN4416A − 35 V IDSS drain current VDS = 15 V; VGS = 0 5 15 mA Ptot total power dissipation up to Tamb = 25 °C 400 mW VGS(off) gate-source cut-off voltage VDS = 15 V; ID = 1 nA Yfs − PN4416 − −6 V PN4416A −2.5 −6 V 4.5 7.5 mS common-source transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz DESCRIPTION 1 gate 2 source 3 drain 1 handbook, halfpage 2 3 g MAM042 Fig.1 Simplified outline and symbol. December 1997 2 d s Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDS CONDITIONS MIN. MAX. UNIT drain-source voltage VGSO PN4416 − 30 V PN4416A − 35 V PN4416 − −30 V PN4416A − −35 V PN4416 − −30 V PN4416A − −35 V − 10 mA gate-source voltage VGDO gate-drain voltage IG DC forward gate current Ptot total power dissipation − 400 mW Tstg storage temperature up to Tamb = 25 °C (note 1) −65 +150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE from junction to ambient (note 1) 350 K/W Note 1. Mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for drain leads 10 mm2. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)GSS PARAMETER gate-source breakdown voltage CONDITIONS MIN. MAX. UNIT VDS = 0; IG = −1 µA PN4416 −30 − V PN4416A −35 − V IGSS reverse gate leakage current VDS = 0; VGS = −15 V − −1 nA IDSS drain current VDS = 15 V; VGS = 0 5 15 mA VGSS gate-source forward voltage VDS = 0; IG = 1 mA − 1 V VGS(off) gate-source cut-off voltage VDS = 15 V; ID = 1 nA − −6 V −2.5 −6 V 4.5 7.5 mS PN4416 − 50 µS PN4416A − 50 µS PN4416 PN4416A Yfs common source transfer admittance VDS = 15 V; VGS = 0 Yos common source output admittance VDS = 15 V; VGS = 0 December 1997 3 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A DYNAMIC CHARACTERISTICS Tj = 25 °C; VDS = 15 V; VGS = 0. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cis input capacitance f = 1 MHz − − 4 pF Cos output capacitance f = 1 MHz − − 2 pF Crs feedback capacitance f = 1 MHz − − 0.8 pF gis common source input conductance f = 100 MHz − − 100 µS gfs common source transfer conductance grs common source feedback conductance f = 400 MHz − − 1 mS f = 100 MHz − 5.2 − mS f = 400 MHz 4 5 − mS f = 100 MHz − −8 − µS f = 400 MHz − −100 − µS − − 75 µS gos common source output conductance f = 100 MHz f = 400 MHz − − 100 µS Vn equivalent input noise voltage f = 100 Hz − 5 − nV/√Hz MRC168 handbook,25 halfpage MRC169 handbook, 10 halfpage I DSS Y fs (mS) (mA) 20 8 15 6 10 4 5 2 0 0 2 0 4 6 –VGS(off) (V) 0 2 6 –VGS(off) (V) VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.2 Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. December 1997 4 4 Common source transfer admittance as a function of gate-source cut-off voltage; typical values. Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A MRC167 80 MRC163 12 handbook, halfpage handbook, halfpage Gos ( µ S) ID (mA) VGS = 0 V 60 8 40 –0.5 V 4 20 –1V 0 0 0 1 2 3 4 5 6 0 4 8 12 –VGS(off) (V) VDS = 15 V; Tj = 25 °C. Fig.4 VDS (V) 16 Tj = 25 °C. Common source output conductance as a function of gate-source cut-off voltage; typical values. Fig.5 Typical output characteristics. MRC164 handbook, 12 halfpage MRC158 1 handbook, halfpage C rs (pF) ID (mA) 0.8 8 0.6 0.4 4 0.2 0 –5 –4 –3 –2 0 –10 –1 0 V (V) GS –6 –4 –2 0 V (V) GS VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.6 Typical input characteristics. December 1997 –8 Fig.7 Typical feedback capacitance. 5 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A MRC157 MRC165 4 handbook,10 halfpage 3.5 handbook, halfpage –I G Cis (pF) 3 (pA) I D = 1 mA 10 3 2.5 10 2 2 10 0.1 mA 1.5 1 1 I GSS –1 10 0.5 –2 0 –10 –8 –6 –4 10 –2 0 VGS (V) 0 4 8 12 16 20 VDG (V) VDS = 15 V; Tj = 25 °C. Fig.8 Typical input capacitance. Fig.9 Gate current as a function of drain-gate voltage, typical values. MRC139 handbook,500 halfpage MRC160 handbook,100 halfpage P tot (mW) 400 gis , b is (mS) 10 b is 300 1 g is 200 0.1 100 0 0 50 100 o Tamb ( C) 0.01 10 150 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.11 Common source input conductance; typical values. Fig.10 Power derating curve. December 1997 6 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A MRC159 100 MRC162 handbook,100 halfpage handbook, halfpage –g rs , –brs (mS) 10 g fs , –bfs (mS) –brs 10 g fs 1 0.1 –b fs 1 –g rs 0.01 0.1 10 100 0.001 10 1000 f (MHz) 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 °C. VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.12 Common source transfer conductance; typical values. Fig.13 Common source feedback conductance; typical values. SPICE parameters for PN4416 September 1992; version 1.0. MRC161 100 handbook, halfpage gos , bos (mS) 10 b os 1 0.1 g os 0.01 10 VTO = −3.553 V 2 BETA = 792.6 µA/V2 3 LAMBDA = 18.46 m/V 4 RD = 7.671 Ω 5 RS = 7.671 Ω 6 IS = 333.4 aA 7 CGSO = 2.920 pF 8 CGDO = 2.261 pF 9 PB = 1.090 V 10 (note 1) FC = 500.0 m Note 1. Parameter not extracted; default value. 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.14 Common source output conductance; typical values. December 1997 1 7 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 December 1997 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 9