DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C FEATURES • Low leakage level (typ. 500 fA) • High gain handbook, halfpage 2 1 • Low cut-off voltage. d g s APPLICATIONS • Impedance converters in e.g. electret microphones and infra-red detectors 3 Top view • VHF amplifiers in oscillators and mixers. MAM036 Marking codes: BF556A: M84. BF556B: M85. BF556C: M86. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Fig.1 Simplified outline and symbol. PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate‘ CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − ±30 V −0.5 −7.5 V 3 7 mA BF556B 6 13 mA BF556C 11 18 mA VDS drain-source voltage (DC) VGSoff gate-source cut-off voltage ID = 200 µA; VDS = 15 V IDSS drain current VGS = 0; VDS = 15 V BF556A Ptot total power dissipation up to Tamb = 25 °C − 250 mW yfs forward transfer admittance VGS = 0; VDS = 15 V 4.5 − mS 1996 Jul 29 2 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − ±30 V VGSO gate-source voltage open drain − −30 V VGDO gate-drain voltage (DC) open source − −30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C up to Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 500 K/W thermal resistance from junction to ambient; note 1 Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 VGSoff gate-source cut-off voltage ID = 200 µA; VDS = 15 V IDSS drain current VGS = 0; VDS = 15 V MIN. −30 TYP. − −0.5 MAX. UNIT − V −7.5 V BF556A 3 − 7 mA BF556B 6 − 13 mA BF556C 11 − 18 mA IGSS gate leakage current VGS = −20 V; VDS = 0 − −0.5 −5000 pA yfs forward transfer admittance VGS = 0; VDS = 15 V 4.5 − − mS yos common source output admittance VGS = 0; VDS = 15 V − 40 − µS 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C DYNAMIC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS Cis input capacitance Crs reverse transfer capacitance common source input conductance gis TYP. UNIT VDS = 15 V; VGS = −10 V; f = 1 MHz 1.7 pF VDS = 15 V; VGS = 0; f = 1 MHz 3 pF VDS = 15 V; VGS = −10 V; f = 1 MHz 0.8 pF VDS = 15 V; VGS = 0; f = 1 MHz 0.9 pF VDS = 10 V; ID = 1 mA; f = 100 MHz 15 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 300 µS gfs common source transfer conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 2 mS VDS = 10 V; ID = 1 mA; f = 450 MHz 1.8 mS grs common source reverse conductance VDS = 10 V; ID = 1 mA; f = 100 MHz −6 µS VDS = 10 V; ID = 1 mA; f = 450 MHz −40 µS VDS = 10 V; ID = 1 mA; f = 100 MHz 30 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 60 µS VDS = 10 V; ID = 1 mA; f = 100 Hz 40 nV/√Hz common source output conductance gos equivalent input noise voltage Vn MRC156 MRC154 handbook, 10 halfpage handbook, 20 halfpage Yfs (mS) IDSS (mA) 16 8 12 6 8 4 4 2 0 0 0 1 2 3 4 5 6 7 0 1 VGSoff (V) 2 3 4 5 6 7 VGSoff (V) VDS = 15 V; ID = 1 µA. VDS = 15 V. Fig.3 Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. 1996 Jul 29 4 Forward transfer admittance as a function of gate-source cut-off voltage; typical values. Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C MRC153 100 Gos MRC155 300 handbook, halfpage handbook, halfpage (µS) RDSon 80 (Ω) 200 60 40 100 20 0 0 −2 −4 0 −6 −8 VGSoff (V) 0 2 4 6 VDS = 15 V. VDS = 100 mV; VGS = 0. Fig.4 Fig.5 Common-source output conductance as a function of gate-source cut-off voltage; typical values. Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. MRC145 5 handbook, halfpage MRC146 16 VGS = 0 V ID (mA) 8 VGSoff (V) handbook, halfpage ID (mA) 4 VGS = 0 V 12 −0.5 V 3 −0.5 V −1.0 V 8 2 −1.5 V −1 V −2.0 V 4 1 −2.5 V 0 0 4 8 12 0 16 0 VDS (V) 8 12 16 VDS (V) Fig.6 Typical output characteristics; BF556A. 1996 Jul 29 4 Fig.7 Typical output characteristics; BF556B. 5 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C MRC147 25 MRC148 30 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 20 15 BF556C 20 −1 V −2 V BF556B 10 10 −3 V 5 −4 V BF556A −5 V 0 0 4 8 12 0 −6 16 −4 −2 0 VGS (V) VDS (V) VDS = 15 V. Fig.8 Typical output characteristics; BF556C. Fig.9 Typical input characteristics. MRC149 3 10halfpage handbook, I MRC151 −102 handbook, halfpage D (µA) 102 IG (pA) BF556C BF556B ID = 10 mA −10 BF556A 1 mA 10 −1 1 IGSS 10−1 −10−1 0.1 mA 10−2 10−3 −8 −6 −4 −2 VGS (V) −10−2 0 0 4 8 12 16 20 VDG (V) VDS = 15 V. ID = 10 mA only for BF556B and BF556C. Fig.10 Drain current as a function of gate-source voltage; typical values. Fig.11 Gate current as a function of drain-gate voltage; typical values. 1996 Jul 29 6 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C MRC150 103 handbook, halfpage MRC166 300 IGSS (pA) Ptot (mW) 102 200 10 100 1 10−1 −50 0 50 100 00 150 50 100 Tj (°C) Tamb ( oC) 150 VDS = 0; VGS = −20 V. Fig.12 Gate current as a function of junction temperature; typical values. Fig.13 Power derating curve. MRC134 1 handbook, halfpage MRC140 3 handbook, halfpage C rs (pF) C is (pF) 0.8 2 0.6 0.4 1 0.2 0 –10 –8 –6 –4 –2 0 –10 0 VGS (V) VDS = 15 V. –6 –4 –2 0 VGS (V) VDS = 15 V. Fig.14 Reverse transfer capacitance; typical values. 1996 Jul 29 –8 Fig.15 Input capacitance; typical values. 7 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C MRC142 102 handbook, halfpage MRC141 10 handbook, halfpage gis, bis (mS) gfs, −bfs 10 (mS) gfs bis 1 1 −bfs gis 10−1 10−2 10 102 10−1 10 103 f (MHz) 102 103 f (MHz) VDS = 10 V; ID = 1 mA; Tamb = 25 °C. VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.16 Common-source input admittance; typical values. Fig.17 Common-source transfer admittance; typical values. MRC143 MRC144 −10 10 handbook, halfpage handbook, halfpage brs, grs bos, gos (mS) (mS) brs −1 bos 1 −10−1 10−1 grs gos −10−2 −10−3 10 10−2 102 f (MHz) 103 10 102 f (MHz) VDS = 10 V; ID = 1 mA; Tamb = 25 °C. VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.18 Common-source reverse admittance; typical values. Fig.19 Common-source output admittance; typical values. 1996 Jul 29 8 103 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C MRC278 10 3 handbook, halfpage Vn (V) 10 2 10 1 10 10 2 10 3 10 4 f (Hz) 10 5 VDS = 10 V; ID = 1 mA. Fig.20 Equivalent noise voltage as a function of frequency. 1996 Jul 29 9 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C PACKAGE OUTLINE 3.0 2.8 handbook, full pagewidth 0.55 0.45 0.150 0.090 B 1.9 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 30 o max 0.48 0.38 0.1 M A B TOP VIEW Dimensions in mm. Fig.21 SOT23. 1996 Jul 29 10 MBC846 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 11