FAIRCHILD FGB30N6S2

FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
•
•
•
•
•
•
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• Low Conduction Loss
Formerly Developmental Type TA49367.
Symbol
Package
C
TO-247
E
C
G
TO-220AB
E
C
TO-263AB
G
G
G
E
COLLECTOR
(Back-Metal)
COLLECTOR
(Flange)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
45
A
IC110
Collector Current Continuous, TC = 110°C
20
A
Collector Current Pulsed (Note 1)
108
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
ICM
60A at 600V
EAS
Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150
PD
Power Dissipation Total TC = 25°C
167
W
Power Dissipation Derating TC > 25°C
1.33
W/°C
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
TJ
TSTG
mJ
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
August 2003
Device Marking
30N6S2
Device
FGH30N6S2
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30 Units
30N6S2
FGP30N6S2
TO-220AB
Tube
N/A
50 Units
30N6S2
FGB30N6S2
TO-263AB
Tube
N/A
50 Units
30N6S2
FGB30N6S2T
TO-263AB
330mm
24mm
800 Units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage
IC = 250µA, VGE = 0
600
-
-
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -10mA, VGE = 0
20
-
-
V
Collector to Emitter Leakage Current
VCE = 600V
TJ = 25°C
-
-
100
µA
TJ = 125°C
-
-
2
mA
-
-
±250
nA
ICES
IGES
Gate to Emitter Leakage Current
VGE = ± 20V
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 12A,
VGE = 15V
TJ = 25°C
-
2.0
2.5
V
TJ = 125°C
-
1.7
2.0
V
VGE = 15V
-
23
29
nC
VGE = 20V
-
26
33
nC
3.5
4.3
5.0
V
-
6.5
8.0
V
-
A
Dynamic Characteristics
QG(ON)
VGE(TH)
VGEP
Gate Charge
IC = 12A,
VCE = 300V
Gate to Emitter Threshold Voltage
IC = 250µA, VCE = 600V
Gate to Emitter Plateau Voltage
IC = 12A, VCE = 300V
Switching Characteristics
SSOA
Switching SOA
TJ = 150°C, RG = 10Ω, VGE =
15V, L = 100µH, VCE = 600V
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω
L = 200µH
Test Circuit - Figure 20
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
td(ON)I
Current Turn-On Delay Time
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
IGBT and Diode at TJ = 125°C
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω
L = 200µH
Test Circuit - Figure 20
60
-
-
6
-
ns
-
10
-
ns
-
40
-
ns
-
53
-
ns
-
55
-
µJ
-
110
-
µJ
-
100
150
µJ
-
11
-
ns
-
17
-
ns
-
73
100
ns
-
90
100
ns
-
55
-
µJ
-
160
200
µJ
-
250
350
µJ
-
-
0.75
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
NOTE:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 20.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Package Marking and Ordering Information
40
30
20
10
0
50
75
100
125
150
70
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH
60
50
40
30
20
10
0
0
100
TC , CASE TEMPERATURE (oC)
fMAX, OPERATING FREQUENCY (kHz)
1000
TC
75oC
VGE = 15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.49oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V
10
20
10
1
30
DUTY CYCLE < 0.5%, VGE = 10V
PULSE DURATION = 250µs
14
12
10
8
6
TJ = 125oC
4
0
0.50
TJ = 25oC
0.75
1.00
1.25
1.50
1.75
2.00
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
700
600
350
VCE = 390V, RG = 10Ω, TJ = 125oC
10
300
8
250
ISC
tSC
6
200
4
150
2
9
10
11
12
13
14
100
16
15
Figure 4. Short Circuit Withstand Time
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
18
2
500
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
TJ = 150oC
400
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
16
300
Figure 2. Minimum Switching Safe Operating Area
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Figure 1. DC Collector Current vs Case
Temperature
VGE = 10V
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
50
18
DUTY CYCLE < 0.5%, VGE =15V
PULSE DURATION = 250µs
16
14
12
10
8
6
TJ = 150oC
TJ = 125oC
4
TJ = 25oC
2
0
.5
.75
1
1.25
1.50
1.75
2.0
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves
600
EOFF TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
400
RG = 10Ω, L = 500µH, VCE = 390V
350
300
TJ = 125oC, VGE = 10V, VGE = 15V
250
200
150
100
TJ = 25oC, VGE = 10V, VGE = 15V
50
0
0
5
10
15
20
RG = 10Ω, L = 500µH, VCE = 390V
500
400
TJ = 125oC, VGE = 10V, VGE = 15V
300
200
100
TJ = 25oC, VGE = 10V, VGE = 15V
0
25
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
20
25
RG = 10Ω, L = 500µH, VCE = 390V
14
35
12
10
TJ = 25oC, TJ = 125oC, VGE = 10V
8
6
4
30
25
TJ = 125oC, VGE = 15V, VGE = 10V
20
15
10
TJ = 25oC, VGE = 10V, VGE =15V
TJ = 25oC, TJ = 125oC, VGE = 15V
5
2
0
15
40
RG = 10Ω, L = 500µH, VCE = 390V
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
10
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
16
0
5
10
15
20
0
25
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
90
120
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
80
tfI , FALL TIME (ns)
td(OFF) TURN-OFF DELAY TIME (ns)
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
70
60
50
40
100
TJ = 125oC, VGE = 10V OR 15V
80
60
30
TJ = 25oC, VGE = 10V OR 15V
20
40
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
©2003 Fairchild Semiconductor Corporation
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves (Continued)
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
150
125
o
TJ = 25 C
100
75
50
TJ = 125oC
25
o
TJ = -55 C
12
VCE = 600V
10
8
6
VCE = 400V
4
VCE = 200V
2
0
5
6
7
9
8
10
IG(REF) = 1mA, RL = 25Ω, TJ = 25oC
14
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
16
175
11
12
13
14
15
0
16
0
2
4
6
1.2
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
0.8
0.6
0.4
ICE = 12A
0.2
ICE = 6A
0
25
50
75
TC
150
125
100
, CASE TEMPERATURE (oC)
C, CAPACITANCE (nF)
1.2
1.0
0.8
CIES
0.6
COES
0.2
CRES
10
20
30
40
50
60
70
80
90
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
©2003 Fairchild Semiconductor Corporation
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
0
14
16
18
20
22
24
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
10
1.0
100
1000
Figure 16. Total Switching Loss vs Gate
Resistance
1.4
0.0
12
RG, GATE RESISTANCE (Ω)
Figure 15. Total Switching Loss vs Case
Temperature
0.4
10
Figure 14. Gate Charge
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
Figure 13. Transfer Characteristic
1.0
8
QG , GATE CHARGE (nC)
VGE , GATE TO EMITTER VOLTAGE (V)
3.5
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
3.0
2.5
ICE = 24A
ICE = 12A
2.0
ICE = 6A
1.5
6
7
8
9
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves (Continued)
ZθJC , NORMALIZED THERMAL RESPONSE
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGP30N6S2D
DIODE TA49390
90%
10%
VGE
EON2
EOFF
L = 200mH
VCE
RG = 10Ω
90%
+
FGP30N6S2
ICE
VDD = 390V
-
10%
td(OFF)I
tfI
trI
td(ON)I
Figure 20. Inductive Switching Test Circuit
©2003 Fairchild Semiconductor Corporation
Figure 21. Switching Test Waveforms
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves (Continued)
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler’s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than TJM . td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 21. EON2 is the integral
of the instantaneous power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Handling Precautions for IGBTs
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
ActiveArray™
FAST
Bottomless™
FASTr™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOSTM
I2C™
TM
EnSigna
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5