PN4141 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 30 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN4141 625 5.0 83.3 mW mW/°C °C/W 200 °C/W PN4141 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, IC = 0 5.0 V ICEX Collector Cutoff Current VCE = 40 V, VOB = 3.0 V 50 nA IBL Base Cutoff Current VCE = 40 V, VOB = 3.0 V 50 nA ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 10 V, IC = 100 µA VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA VCE = 1.0 V, IC = 150 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 30 50 300 0.4 1.6 1.3 2.6 V V V V 8.0 pF SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 100 kHz hfe Small-Signal Current Gain I C = 20 mA, VCE = 20 V, f = 100 MHz 2.5 SWITCHING CHARACTERISTICS td Delay Time VCC = 30 V, IC = 150 mA, 10 ns tr Rise Time 40 ns ts Storage Time I B1 = 15 mA, VOB (off ) = 0.5 V VCC = 30 V, IC = 150 mA, 250 ns tf Fall Time I B1 = IB2 = 15 mA 60 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% PN4141 NPN General Purpose Amplifier