DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation (+2.7 to +5 V) Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC Low Power Consumption TTL/CMOS Compatible ESD Protection > 2000 V (Method 3015.7) Available in MSOP-8 and SOIC-8 BENEFITS APPLICATIONS D D D D D D D D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems DESCRIPTION The DG9232/9233 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 20 W) and small physical size, the DG9232/9233 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9232/9233 is built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7 is 2000 V. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9232/9233. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION NC1 1 8 V+ NO1 1 8 V+ COM1 2 7 IN1 COM1 2 7 IN1 IN2 3 6 COM2 IN2 3 6 COM2 GND 4 5 NC2 GND 4 5 NO2 Top View Top View TRUTH TABLE - DG9232 TRUTH TABLE - DG9233 Logic Switch Logic Switch 0 On 0 Off 1 Off 1 Logic “0” v0.8 V Logic “1”w 2.4 V On Logic “0” v0.8 V Logic “1”w 2.4 V ORDERING INFORMATION Temp Range Package Part Number DG9232DY SOIC-8 -40 to 85°C ° MSOP-8 Document Number: 70837 S-05298—Rev. D, 17-Dec-01 DG9233DY DG9232DQ DG9233DQ www.vishay.com 1 DG9232/9233 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA (Pulsed at 1ms, 10% duty cycle) ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C Power Dissipation (Packages)b 8-Pin Narrow Body SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C SPECIFICATIONS (V+ = 3 V) D Suffix Test Conditions Otherwise Unless Specified –40 to 85_C V+ = 3 V, "10%, VIN = 0.8 or 2.4 Ve Tempa Minc Typb Maxc Unit Full 0 rDS(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA 3 V Room Full 30 50 80 rDS(on) Matchd DrDS(on) rDS(on) Flatnessd rDS(on) Flatness VNO or VNC = 1.5 V Room 0.4 2 VNO or VNC = 1 and 2 V Room 4 8 INO/NC(off) VNO or VNC = 1 V / 2 V, VCOM = 2 V / 1 V Room Full -100 –5000 5 100 5000 COM Off Leakage Current g ICOM(off) VCOM = 1 V / 2 V, VNO or VNC = 2 V / 1 V Room Full -100 –5000 5 100 5000 Channel-On Leakage Current g ICOM(on) VCOM = VNO or VNC = 1 V / 2 V Room Full -200 –10000 10 200 10000 Parameter Symbol Analog Switch Analog Signal Ranged Drain-Source On-Resistance NO or NC Off Leakage Current g VANALOG W pA Digital Control Input Current mA IINL or IINH Full 1 Turn-On Time tON Room Full 50 120 200 Turn-Off Time tOFF Room Full 20 50 120 Charge Injectiond QINJ Room 1 5 Room –74 Room –90 Room 7 Room 20 Room 13 Dynamic Characteristics VNO or VNC = 1.5 V Off-Isolation OIRR Crosstalk XTALK NC and NO Capacitance C(off) Channel-On Capacitance CCOM(on) Com-Off Capacitance CCOM(off) CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz f = 1 MHz ns pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 2.7 V+ = 3.3 V, VIN = 0 or 3.3 V 12 V 1 mA Notes: a. b. c. d. e. f. g. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values. Guaranteed by 5-V leakage tests, not production tested. www.vishay.com 2 Document Number: 70837 S-05298—Rev. D, 17-Dec-01 DG9232/9233 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Test Conditions Otherwise Unless Specified D Suffix –40 to 85_C V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Tempa Minc Typb Maxc Unit Full 0 rDS(on) VNO or VNC = 3.5 V, V+ = 4.5 V ICOM = 5 mA 5 V Room Full 20 30 50 rDS(on) Matchd DrDS(on) rDS(on) Flatnessd rDS(on) Flatness VNO or VNC = 3.5 V Room 0.4 2 VNO or VNC = 1, 2, and 3 V Room 2 6 INO/NC(off) VNO or VNC = 1 V / 4 V, VCOM = 4 V / 1 V Room Full -100 –5000 10 100 5000 COM Off Leakage Current ICOM(off) VCOM = 1 V / 4 V, VNO or VNC = 4 V / 1 V Room Full -100 –5000 10 100 5000 Channel-On Leakage Current ICOM(on) VCOM = VNO or VNC = 1 V / 4 V Room Full -200 –10000 Parameter Symbol Analog Switch Analog Signal Ranged Drain-Source On-Resistance NO or NC Off Leakage Current VANALOG W pA 200 10000 Digital Control Input Current mA IINL or IINH Full 1 Turn-On Time tON Room Full 35 75 150 Turn-Off Time tOFF Room Full 20 50 100 Charge Injectiond QINJ Room 2 5 Room –74 Room –90 Dynamic Characteristics VNO or VNC = 3.0 V Off-Isolation OIRR Crosstalk XTALK CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz pC dB NC and NO Capacitance C(off) Room 7 Channel-On Capacitance CD(on) Room 20 Com-Off Capacitance CD(off) Room 13 f = 1 MHz ns pF Power Supply Power Supply Range V+ Power Supply Current I+ 2.7 V+ = 5.5 V, VIN = 0 or 5.5 V 12 V 1 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values. Document Number: 70837 S-05298—Rev. D, 17-Dec-01 www.vishay.com 3 DG9232/9233 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Charge Injection Supply Current vs. VIN 3000 2.0 V+ = 3 V 1.5 2500 1.0 I SUPPLY ( m A) 2000 Q INJ (pC) 0.5 0.0 –0.5 1500 V+ = 5 V 1000 500 –1.0 0 –1.5 V+ = 3 V –2.0 0.0 –500 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 VCOM 5 Off-Isolation vs. Frequency –40 1 nA –60 OFF-Isolation (dB) I COM(off) (A) Leakage Current vs. Temperature 100 pA ICOM(off) ICOM(on) 1 pA –80 –100 –120 0.1 pA –140 25 45 65 85 105 125 0.001 M 0.01 M Temperature (_C) 1M 10 M rDS vs. VCOM Off-Leakage vs. Voltage @ 25_C 30 2.0 0.1 M Frequency (Hz) 2.5 V+ = 5 V 27 1.5 1.0 ICOM 0.5 r DS(on) ( W ) I OFF (pA) 4 VIN 10 nA 10 pA 3 0.0 –0.5 INO/NC V+ = 3 V 24 21 18 –1.0 –1.5 V+ = 5 V 15 –2.0 –2.5 12 0 1 2 3 VCOM www.vishay.com 4 4 5 0 1 2 3 4 5 VCOM Document Number: 70837 S-05298—Rev. D, 17-Dec-01 DG9232/9233 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS vs. VCOM Switching Time vs. Temperature 70 35 V+ = 3 V 85_C 60 28 tON 50 t ON / t OFF (nsec) r DS(on) ( W ) 25_C 40_C 21 14 40 30 tOFF 20 7 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 –60 3.0 –30 0 VCOM 30 60 90 120 Temperature (_C) tON/tOFF vs. Power Supply Voltage Input Switching Point vs. Power Supply Voltage 120 2.25 100 2.00 1.75 V IN (sw) T (nsec) 80 60 1.50 1.25 tON 40 1.00 tOFF 20 0 1.5 0.75 0.50 2.0 2.5 3.0 3.5 V+ Document Number: 70837 S-05298—Rev. D, 17-Dec-01 4.0 4.5 5.0 2 3 4 5 6 V+ www.vishay.com 5 DG9232/9233 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input V+ 0V Switch Output COM NO or NC Switc h Input tr t 20 ns tf t 20 ns 50% VOUT 0.9 x VOUT IN Logi c Input RL 300 W GND CL 35 pF Switch Output 0V tOFF tON 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT + V COM ǒ RL R L ) R ON Ǔ FIGURE 1. Switching Time V+ Logic Input V+ V1 NO or NC COM1 NO or NC COM2 V2 tr <5 ns tf <5 ns 3V 0V RL 300 W CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen DVOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL 3V IN On On Off GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection www.vishay.com 6 Document Number: 70837 S-05298—Rev. D, 17-Dec-01 DG9232/9233 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0V, 2.4 V IN COM NC or NO Off Isolation + 20 log RL GND V NCńNO V COM Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz FIGURE 5. Channel Off/On Capacitance Document Number: 70837 S-05298—Rev. D, 17-Dec-01 www.vishay.com 7