Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA ! 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability C G G C E E CASE 221A–06, Style 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCGR CLAMPED Vdc Gate–Emitter Voltage VGE CLAMPED Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Single Pulsed (tp = 10 ms) IC ICM 20 60 Adc Apk Total Power Dissipation @ TC = 25°C (TO–220) Derate Above 25°C PD 150 1.0 Watts W/°C TJ, Tstg – 55 to 175 °C " Operating and Storage Temperature Range Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C (VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH) EAS mJ 500 THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw RqJC RqJA 1.0 62.5 °C/W TL 275 °C 10 lbfin (1.13 Nm) SMARTDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 1 TMOS Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Clamp Voltage (IClamp = 10 mA, TJ = –40 to 150°C) BVCES Vdc 135 Zero Gate Voltage Collector Current (VCE = 100 V, VGE = 0 V) (VCE = 100 V, VGE = 0 V, TJ = 150°C) ICES Gate–Emitter Clamp Voltage (IG = 1 mA) BVGES 10 IGES — — 1.0 1.0 1.5 4.4 2.0 Gate–Emitter Leakage Current (VGE = — — "5 V, VCE = 0 V) — — 10 100 mA Vdc mA ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, IC = 1 mA) Threshold Temperature Coefficient (Negative) VCE(th) Collector–Emitter On–Voltage (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 175°C) VCE(on) Forward Transconductance (VCE u 15 V, IC = 10 A) V mV/°C V — — 1.9 1.8 gfs 8.0 15 — Mhos Ciss — 430 600 pF Coss — 182 250 Crss — 48 100 td(on) — TBD TBD tr — TBD TBD td(off) — TBD TBD tf — TBD TBD Qg — 14 20 Qgs — 3.0 — Qgd — 6.0 — DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time ((VCC = 68 V, V, IC = 20 A, A, VGE = 5 V, RG = 9.1 W) Fall Time Total Gate Charge Gate–Emitter Charge (VCC = 108 V, V IC = 20 A, A VGE = 5 V) Gate–Collector Charge ns nC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K GATE COLLECTOR EMITTER COLLECTOR Z L R V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–06 ISSUE Y Motorola TMOS Power MOSFET Transistor Device Data 3 MGP20N14CL Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ MGP20N14CL/D Motorola TMOS Power MOSFET Transistor Device Data