BLW96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 200 W/28 MHz • IMD3 = -32 dBc Typ. at 220 W (PEP) • Omnigold™ Metalization System C E FULL R C B B E H E D G F MAXIMUM RATINGS I J IC 12 A VEES 110 V VCEO 55 V PDISS O O O O O TJ -65 C to +200 C TSTG -65 C to +150 C θJC 0.7 C/W inches / mm A .230 / 5.84 MAXIMUM .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 L ORDER CODE: ASI10826 O TC = 25 C NONETEST CONDITIONS SYMBOL inches / mm K O CHARACTERISTICS MINIMUM .220 / 5.59 E 320 W @ TC = 25 C K DIM B 4.0 V VEBO Ø.125 NOM. MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 110 V BVCEO IC = 200 mA 55 V BVEBO IE = 20 mA 4.0 V ICES VCE = 55 V hFE VCE = 5.0 V IC = 7.0 A VCE IC = 20 A IC = 4.0 A CC VCB = 50 V GP IMD3 ηC VCE = 50 V 15 f = 1.0 MHz mA 50 --- 1.9 V 280 13.5 ICQ =100 mA 10 POUT = 200 W (PEP) 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF -30 dB dBc % REV. A 1/1