TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V (D-S) MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability D D D D D G 1 S 2 D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-226AA (TO-92) 3 S 1 G TO-92-18RM (TO-18 Lead Form) Device Marking Front View D 1 2 “S” TN 2404KL xxyy G 2 “S” BS 107KL xxyy 3 “S” = Siliconix Logo xxyy = Date Code S 3 “S” = Siliconix Logo xxyy = Date Code D D Top View 4 87 4.87 APPLICATIONS Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” TO-236 (SOT-23) Qg (Typ) Device Marking Front View TN2404K Marking Code: K1ywl K1 = Part Number Code for TN2404K y = Year Code w = Week Code l = Lot Traceability Top View Top View TN2404KL BS107KL ORDERING INFORMATION Standard Part Number Lead (Pb)-Free Part Number TN2404K-T1 TN2404K-T1—E3 TN2404KL-TR1 TN2404KL-TR1—E3 BS107KL-TR1 BS107KL-TR1—E3 Option With Tape and Reel Folding Option Spool Option ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN2404K TN2404KL/BS107KL Drain-Source Voltage VDS 240 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 70_C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25_C TA= 70_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg V 0.2 0.3 0.16 0.25 0.8 1.4 0.36 0.8 0.23 0.51 350b 156 −55 to 150 Unit A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Surface mounted on an FR4 board. Document Number: 72225 S-41761—Rev. B , 04-Oct-04 www.vishay.com 1 TN2404K/TN2404KL/BS107KL Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 100 mA 240 257 VGS(th) VDS = VGS, ID = 250 mA 0.8 1.65 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On State Drain Currentb On-State ID(on) D( ) Parameter Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage 2.0 "100 VDS = 192 V, VGS = 0 V 1 10 TJ = 55_C VDS = 10 V, VGS =10 V 0.8 VDS = 10 V, VGS = 4.5 V 0.5 nA mA A VGS = 10 V, ID = 0.3 A 2.2 4 VGS = 4.5 V, ID = 0.2 A 2.3 4 VGS = 2.5 V, ID = 0.1 A 2.4 6 gfs VDS = 10 V, ID = 0.3 A 1.6 VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 4.87 8 rDS(on) ( ) V W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.53 td(on) 5 10 12 20 35 60 16 25 Turn On Time Turn-On turn-Off Time tr td(off) tr VDS = 192 V, VGS = 10 V, ID = 0.5 A VDD = 60 V, RL = 200 W ID ] 0.3 A, VGEN = 10 V, RG = 25 W 0.56 nC nS Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72225 S-41761—Rev. B , 04-Oct-04 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.4 1.8 VGS = 10 thru 3 V I D − Drain Current (A) I D − Drain Current (A) 1.2 2.5 V 0.9 0.6 0.3 0.0 1.0 125_C 0.8 0.6 0.4 0.0 0 1 2 3 4 5 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 300 5 250 3 C − Capacitance (pF) 4 VGS = 4.5 V VGS = 10 V 2 1 200 Ciss 150 100 50 0 0.0 Crss Coss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 ID − Drain Current (A) 20 30 40 50 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 10 2.2 VDS = 192 V ID = 0.5 A VGS = 10 V ID = 0.3 A 2.0 8 1.8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 25_C 0.2 2V r DS(on) − On-Resistance ( W ) TC = −55_C 1.2 1.5 6 4 2 1.6 1.4 VGS = 4.5 V ID = 0.2 A 1.2 1.0 0.8 0.6 0 0 1 2 3 Qg − Total Gate Charge (nC) Document Number: 72225 S-41761—Rev. B , 04-Oct-04 4 5 0.4 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 8 10 ID = 100 mA r DS(on) − On-Resistance ( W ) I S − Source Current (A) 7 1 TJ = −55_C 0.1 TJ = 25_C 0.01 6 ID = 50 mA 5 4 3 2 TJ = 150_C ID = 10 mA 1 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.3 0.2 V GS(th) Variance (V) 0.1 ID = 250 mA −0.0 −0.1 −0.2 −0.3 −0.4 −0.5 −50 −25 0 25 50 75 100 125 150 TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =350_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72225 S-41761—Rev. B , 04-Oct-04 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM t1 t2 1. Duty Cycle, D = 0.02 0.01 2. Per Unit Base = RthJA = 156_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 0.1 t1 t2 1 10 100 1K 10 K t1 − Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72225. Document Number: 72225 S-41761—Rev. B , 04-Oct-04 www.vishay.com 5