BS829 DMOS Transistors (P-Channel) FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6) .094 (2.4) .016 (0.4) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Dimensions in inches and (millimeters) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S29 Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Drain-Source Voltage –VDSS 400 V Drain-Gate Voltage –VDGS 400 V Gate-Source Voltage (pulsed) VGS ±20 V Drain Current (continuous) at TSB = 50 °C – ID 70 mA Power Dissipation at TSB = 50 °C Ptot 3501) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 350 mA Forward Voltage Drop (typ.) at VGS = 0 V, IF = 350 mA, Tj = 25 °C VF 1.0 V 1) Device on fiberglass substrate, see layout Inverse Diode 4/98 BS829 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V –V(BR)DSS 400 430 – V Gate-Body Leakage Current, Forward at –VGSF = 20 V, VDS = 0 V –IGSSF – – 100 nA Gate-Body Leakage Current, Reverse at –VGSR = 20 V, VDS = 0 V –IGSSR – – 100 nA Drain Cutoff Current at –VDS = 400 V, VGS = 0 V –IDSS – – 500 µA Gate-Source Threshold Voltage at VGS = VDS, –ID = 250 µA –VGS(th) 1 1.5 2.5 V Drain-Source ON Resistance at VGS = 5 V, –ID = 100 mA RDS(on) – 40 50 Ω Capacitance at –VDS = 25 V, VGS = 0 V, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance CiSS COSS CrSS – – – 200 30 10 – – – pF pF pF Switching Times at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time ton toff – – 10 50 – – ns ns Thermal Resistance Junction to Ambient Air RthJA – – 3201) K/W 1) Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)