BSO4420 Preliminary data OptiMOSâ Small-Signal-Transistor Product Summary Feature • N-Channel • Logic Level • Very low on-resistance RDS(on) VDS 30 V RDS(on) 7.8 mΩ ID 13 A • Excellent Gate Charge x RDS(on) product (FOM) • Avalanche rated • dv/dt rated • Ideal for fast switching applications Type Package Ordering Code Marking BSO4420 SO 8 Q67042-S4027 4420 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID 13 ID puls 52 EAS 230 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 2.5 W -55... +150 °C A TA=25°C Pulsed drain current TA=25°C Avalanche energy, single pulse mJ ID =13 A , VDD=25V, RGS =25Ω Reverse diode dv/dt kV/µs IS =13A, VDS=24V, di/dt=200A/µs, Tjmax =150°C TA =25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-02-11 BSO4420 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 30 @ min. footprint; t ≤ 10 sec. - - 110 @ 6 cm 2 cooling area 1); t ≤ 10 sec. - - 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =80µA Zero gate voltage drain current µA IDSS VDS =30V, VGS =0V, Tj=25°C - 0.01 1 VDS =30V, VGS =0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 9.3 10.9 mΩ RDS(on) - 6.7 7.8 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID =11A Drain-source on-state resistance VGS =10V, ID=13A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-02-11 BSO4420 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 13.7 27.4 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max , ID =11.6A Input capacitance Ciss VGS =0, VDS =25V, - 1770 2213 Output capacitance Coss f=1MHz - 740 925 Reverse transfer capacitance Crss - 165 206 Gate resistance RG - 1.3 - Ω Turn-on delay time td(on) VDD =15V, VGS=10V, - 9 13.5 ns Rise time tr ID =11A, RG =2.2Ω - 44 66 Turn-off delay time td(off) - 10 15 Fall time tf - 32 48 - 4.9 6.1 - 12.8 16 - 27 33.7 - 25 - V(plateau) VDD =15V, ID=13A - 2.7 - V IS - - 3.6 A - - 52 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =15V, ID=13A VDD =15V, ID=13A, nC VGS =0 to 5V Output charge Qoss VDS =15V, ID =13A, VGS =0 Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IS |=|IF | - 0.85 1.13 V Reverse recovery time trr VR =15V, IF =lS , - 32 48 ns Reverse recovery charge Qrr diF /dt=100A/µs - 43.6 70 nC Page 3 2002-02-11 BSO4420 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA) parameter: VGS ≥ 10 V BSO4420 14 W A 2.4 12 2.2 11 2 10 1.8 9 ID Ptot BSO4420 2.8 1.6 8 1.4 7 1.2 6 1 5 0.8 4 0.6 3 0.4 2 0.2 1 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C 10 = 2 BSO4420 A R o S( D 160 °C parameter : D = tp /T VD n) 10 2 tp = 230.0µs BSO4420 K/W 10 1 1 ms Z thJS 10 1 ID 10 ms 10 0 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -1 0.02 DC 10 -3 10 -2 -1 10 10 0 10 1 V 10 2 VDS single pulse 0.01 10 -4 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 s 10 tp Page 4 2002-02-11 2 BSO4420 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS BSO4420 BSO4420 0.03 Ptot = 2.5W Ω A h gf e b 24 ID b VGS [V] a 2.5 c 3.5 d d 4.0 e 4.5 20 16 d 0.022 0.02 f 5.0 0.018 g 6.0 0.016 h 10.0 0.014 0.012 c 12 c 0.024 3.0 RDS(on) 32 e 0.01 0.008 8 g h 0.006 b 0.004 VGS [V] = 4 0.002 0 0 a 0.5 1 1.5 2 2.5 3 3.5 4 f V 0 0 5 b 3.0 c 3.5 4 d 4.0 e f 4.5 5.0 8 g h 6.0 10.0 12 16 20 A VDS 26 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID); Tj=25°C parameter: gfs 50 60 S A 40 g fs ID 35 40 30 25 30 20 20 15 10 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS Page 5 0 0 10 20 30 40 50 70 A ID 2002-02-11 BSO4420 Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 13 A, VGS = 10 V parameter: VGS = VDS 0.016 BSO4420 2.5 Ω max. 0.012 V GS(th) RDS(on) V 0.01 typ. 1.5 min. 98% 0.008 typ 1 0.006 0.004 0.5 0.002 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 BSO4420 A pF Ciss C IF 10 1 Coss 10 3 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 10 15 20 V 30 VDS 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2002-02-11 BSO4420 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 13 A , VDD = 25 V, RGS = 25 Ω parameter: ID = 13 A pulsed 240 16 BSO4420 mJ V 200 12 VGS E AS 180 160 10 140 120 8 0.2 VDS max 100 0.5 VDS max 6 0.8 V DS max 80 60 4 40 2 20 0 25 50 75 100 150 °C Tj 0 0 10 20 30 40 50 nC 70 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 BSO4420 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 °C 180 Tj Page 7 2002-02-11 BSO4420 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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