SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS66 BSS67 ISSUE 2 SEPTEMBER 1995 ✪ PARTMARKING DETAILS BSS66 BSS67 BSS66R BSS67R - M6 M7 M8 M9 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 100 mA Base Current IB 50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range t j:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=1mA Collector-Base Breakdown Voltage V(BR)CBO 60 V IC=10µA Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA Collector- Emitter Cut-off Current ICES 50 nA VCES=30V Collector-Emitter Saturation Voltage VCE(sat) 0.20 0.30 V V IC=10mA, IB=1mA IC=50mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 0.95 V V IC=10mA, IB=1mA IC=50mA, IB=5mA* Static Forward Current Transfer Ratio BSS66 hFE 20 35 50 30 15 Static Forward Current Transfer Ratio BSS67 Transition Frequency BSS66 BSS67 hFE fT 40 70 100 60 30 150 IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 300 IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 250 300 MHz MHz IC=10mA, VCE=20V f=100MHz VCB=5V, f=100kHz Collector-Base Capacitance Cobo 4 pF Emitter-Base Capacitance Cibo 8 pF VEB=0.5V, f=100kHz Noise Figure N dB IC=100µA, VCE=5V RS=1kΩ, f=10Hz to15.7 kHz Switching times: Delay; Rise Storage Time Fall Time td; tf ts tf ns ns ns VCC=3V, IC=10mA IB1= IB2 =1mA Typ. 6 35 200 50 * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER