CED9926/CEU9926 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 20V , 26A , RDS(ON)=30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability. TO-251 & TO-252 package. G D G S CEU SERIES TO-252AA(D-PAK) G D S CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Ć12 V Drain Current-Continuous -Pulsed ID 26 A IDM 78 A Drain-Source Diode Forward Current IS 26 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 38 0.25 W W/ C TJ, TSTG -55 to 175 C Thermal Resistance, Junction-to-Case RįJC 4 C/W Thermal Resistance, Junction-to-Ambient RįJA 50 C/W Operating and Storage Temperature Range THERMAL CHARACTERISTICS 6-82 CED9926/CEU9926 ELECTRICAL CHARACTERISTICS (TC= 25 C unless otherwise noted) Parameter C Min Typ Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID=250µA Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 1 µA Gate-Body Leakage IGSS VGS = Ć12V, VDS = 0V Ć100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.5 V Drain-Source On-State Resistance RDS(ON) VGS = 4.5V, ID = 8A 30 mΩ VGS = 2.5V, ID = 6.6A 40 mΩ 4 OFF CHARACTERISTICS 20 V ON CHARACTERISTICS a ID(ON) gFS On-State Drain Current Forward Transconductance VDS = 5V, VGS = 4.5V VDS = 10V, ID = 8A 0.5 A 26 15 S 500 PF 300 PF 140 PF b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =15V, VGS = 0V f =1.0MHZ b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 10V, ID = 1A VGS = 4.5V, RGEN =6 Ω VDS = 10V,ID = 8A VGS = 4.5V 6-83 20 40 ns 18 40 ns 60 108 ns 28 56 ns 10 15 nC 2.3 nC 2.9 nC 6 CED9926/CEU9926 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS a Diode Forward Voltage 1.3 Notes a.Pulse Test:Pulse Width ś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 30 15 VGS=4.5,3.5,3V VGS=2.5V 12 20 15 VGS=2V 10 5 VGS=1.5V ID, Drain Current (A) ID, Drain Current (A) 25 0 9 6 25 C 3 0 1 0 3 2 4 Tj=125 C 0.5 1 -55 C 1.5 2 2.5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1000 800 C, Capacitance (pF) 6 VGS = 0V, Is = 4A VSD 600 Ciss 400 Coss 200 Crss 0 0 5 10 15 20 VDS, Drain-to Source Voltage (V) 2.2 1.9 ID=8A VGS=4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 6-84 V 1.30 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage CED9926/CEU9926 VDS=VGS ID=250ijA 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 1.15 ID=250ijA 1.10 1.05 1.00 0.95 0.90 Figure 5. Gate Threshold Variation with Temperature 25 50 75 100 125 150 Figure 6. Breakdown Voltage Variation with Temperature 50 20 16 Is, Source-drain current (A) gFS, Transconductance (S) 0 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 12 8 4 VDS=10V 10 1.0 0.1 0 0 3 6 9 0.6 12 IDS, Drain-Source Current (A) 1.4 2 ID=8A VDS=10V 10 ID, Drain Current (A) 4 3 2 1 10 1 6 9 Qg, Total Gate Charge (nC) ON )Li mi t 10ms 100ms 1s DC 10 0 -1 10 10 12 R ( DS 10s -2 0 3 1.2 Figure 8. Body Diode Forward Voltage Variation with Source Current 5 0 1.0 0.8 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current VGS, Gate to Source Voltage (V) 6 0.85 -50 -25 TA=25 C RįJA=50 C/W Single Pulse 10 -1 10 0 10 1 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 6-85 10 2 CED9926/CEU9926 4 VDD t on RL V IN D VOUT VOUT 6 td(off) tf 90% 90% VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit 0 r(t),Normalized Effective Transient Thermal Impedance 10 D=0.5 0.2 10 -1 0.1 0.05 PDM 0.02 10 t1 -2 t2 0.01 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 6-86 10 2