CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz. FEATURES Package Type : 440196 & 440166 PN: CGH5503 0P2 & CGH55 030F2 APPLICATIONS • 4.5 to 6.0 GHz Operation • 2-Way Private Radio • 12 dB Small Signal Gain at 5.65 GHz • Broadband Amplifiers • 30 W typical PSAT • Cellular Infrastructure • 60 % Efficiency at PSAT • Test Instrumentation • 28 V Operation • Class A, AB Amplifiers for Drivers and ch 2011 Rev 3.1 – Mar Gain Blocks Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current mA IGMAX 7.0 Soldering Temperature1 TS 245 ˚C Screw Torque τ 60 in-oz RθJC 4.8 ˚C/W TC -40, +150 ˚C Thermal Resistance, Junction to Case2 Case Operating Temperature2,3 Note: 1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 2 Measured for the CGH55030 at PDISS = 28 W. 3 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.3 –2.3 VDC VDS = 10 V, ID = 7.2 mA Gate Quiescent Voltage VGS(Q) – -3.0 – VDC VDS = 28 V, ID = 250 mA Saturated Drain Current IDS 5.8 7.0 – A Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 7.2 mA DC Characteristics 1 VDS = 6.0 V, VGS = 2 V RF Characteristics2 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted) Small Signal Gain GSS 9.0 11.0 - dB VDD = 28 V, IDQ = 250 mA Power Output3 PSAT 20 30 – W VDD = 28 V, IDQ = 250 mA η 50 60 – % VDD = 28 V, IDQ = 250 mA, PSAT VSWR - – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 250 mA, PSAT Input Capacitance CGS – 9.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 2.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55030-TB. 3 PSAT is defined as IG = 0.72 mA. 4 Drain Efficiency = POUT / PDC Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Performance Small Signal S-Parameters vs Frequency of CGH55030F2 and CGH55030P2 in the CGH55030-TB VDD = 28 V, IDQ = 250 mA 12 5 S21 0 S11 8 -5 6 -10 4 -15 2 -20 0 S11 (dB) S21 (dB) 10 -25 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 Frequency (GHz) Drain Efficiency, Power and Gain vs Frequency of the CGH55030F2 and- GaN CGH55030P2 in the CGH55030-TB CGH55030 HEMT C-Band Performance VDD = 28 V, and IDQ Gain = 250 mA Drain Efficiency, Power, vs Frequency Drain Efficiency (%), Power (dBm), Gain (dB) 70 60 50 40 Gain (dB) 30 Psat (dBm) Drain Efficiency (%) 20 10 0 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH55030F2/CGH55030P2 VDD = 28 V, IDQ = 250 mA Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F2/CGH55030P2 VDD = 28 V, IDQ = 250 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 5500 8.0 – j12.4 14.1 – j12.6 5650 8.7 - j13.1 14.7 – j11.7 5800 8.4 - j14.0 15.4 – j11.0 Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package. Note 2. Impedances are extracted from the CGH55030-TB demonstration amplifier and are not source and load pull data derived from the transistor. CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation De-rating Curve 30 Power Dissipation (W) 25 20 15 Note 1 10 5 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55030-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 1/16W, 0603, 1%, 22.6 OHMS 1 C2 CAP, 0.3pF, +/-0.05pF, 0402, ATC600L 1 C16 CAP, 33 UF, 20%, G CASE 1 C15 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C8 CAP 10UF 16V TANTALUM 1 C9 CAP, 0.4pF, +/-0.05pF, 0603, ATC600S 1 C1 CAP, 1.2pF, +/-0.1pF, 0603, ATC600S 1 C6,C13 CAP,200 PF,0603 PKG, 100 V 2 C4,C11 CAP, 10.0pF,+/-5%, 0603, ATC600S 2 C5,C12 CAP, 39pF, +/-5%, 0603, ATC600S 2 C7,C14 CAP, 330000PF, 0805, 100V, TEMP STABILIZ 2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH55030 1 J3,J4 J1 CGH55030-TB Demonstration Amplifier Circuit Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55030-TB Demonstration Amplifier Circuit Schematic (CGH55030F) CGH55030-TB Demonstration Amplifier Circuit Outline Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Package S-Parameters for CGH55030 (Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.917 -157.22 12.62 91.45 0.018 7.56 0.458 -158.97 600 MHz 0.916 -161.92 10.57 87.33 0.018 4.70 0.465 -160.93 700 MHz 0.916 -165.46 9.07 83.78 0.018 2.41 0.472 -162.19 800 MHz 0.916 -168.28 7.94 80.58 0.018 0.51 0.478 -163.04 900 MHz 0.916 -170.61 7.05 77.64 0.017 -1.12 0.485 -163.64 1.0 GHz 0.916 -172.60 6.33 74.88 0.017 -2.55 0.493 -164.09 1.1 GHz 0.917 -174.33 5.74 72.25 0.017 -3.82 0.500 -164.45 1.2 GHz 0.917 -175.88 5.24 69.73 0.017 -4.94 0.508 -164.77 1.3 GHz 0.918 -177.28 4.82 67.30 0.017 -5.95 0.516 -165.06 1.4 GHz 0.918 -178.57 4.46 64.94 0.017 -6.84 0.525 -165.36 1.5 GHz 0.919 -179.78 4.14 62.65 0.016 -7.63 0.533 -165.67 1.6 GHz 0.919 179.09 3.87 60.41 0.016 -8.31 0.542 -165.99 1.7 GHz 0.920 178.01 3.62 58.22 0.016 -8.90 0.550 -166.35 1.8 GHz 0.921 176.98 3.40 56.07 0.016 -9.39 0.559 -166.73 1.9 GHz 0.921 175.99 3.21 53.97 0.015 -9.77 0.568 -167.14 2.0 GHz 0.922 175.03 3.03 51.90 0.015 -10.06 0.577 -167.59 2.1 GHz 0.923 174.09 2.87 49.87 0.015 -10.24 0.585 -168.07 2.2 GHz 0.924 173.17 2.73 47.87 0.014 -10.31 0.594 -168.57 2.3 GHz 0.924 172.27 2.60 45.91 0.014 -10.27 0.602 -169.11 2.4 GHz 0.925 171.39 2.47 43.97 0.014 -10.12 0.610 -169.67 2.5 GHz 0.926 170.51 2.36 42.07 0.014 -9.85 0.619 -170.26 2.6 GHz 0.926 169.65 2.26 40.19 0.013 -9.46 0.626 -170.88 2.7 GHz 0.927 168.79 2.16 38.34 0.013 -8.95 0.634 -171.52 2.8 GHz 0.928 167.93 2.08 36.52 0.013 -8.31 0.642 -172.17 2.9 GHz 0.928 167.08 1.99 34.72 0.013 -7.54 0.649 -172.85 3.0 GHz 0.929 166.24 1.92 32.94 0.013 -6.65 0.656 -173.55 3.2 GHz 0.930 164.54 1.78 29.45 0.012 -4.49 0.670 -175.00 3.4 GHz 0.931 162.85 1.66 26.05 0.012 -1.85 0.683 -176.50 3.6 GHz 0.932 161.14 1.55 22.72 0.012 1.19 0.695 -178.06 3.8 GHz 0.933 159.42 1.46 19.46 0.012 4.55 0.706 -179.66 4.0 GHz 0.933 157.68 1.38 16.27 0.012 8.08 0.716 178.70 4.2 GHz 0.934 155.91 1.31 13.12 0.012 11.64 0.726 177.02 4.4 GHz 0.934 154.11 1.24 10.03 0.013 15.08 0.735 175.30 4.6 GHz 0.935 152.28 1.18 6.97 0.013 18.26 0.743 173.56 4.8 GHz 0.935 150.41 1.13 3.95 0.014 21.09 0.750 171.78 5.0 GHz 0.935 148.49 1.08 0.96 0.015 23.50 0.756 169.97 5.2 GHz 0.935 146.53 1.04 -2.00 0.016 25.48 0.762 168.12 5.4 GHz 0.935 144.52 1.00 -4.96 0.017 27.02 0.768 166.24 5.6 GHz 0.935 142.45 0.97 -7.90 0.018 28.12 0.773 164.32 5.8 GHz 0.934 140.31 0.94 -10.84 0.020 28.83 0.777 162.36 6.0 GHz 0.934 138.12 0.91 -13.79 0.021 29.18 0.781 160.36 Download this s-parameter file in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Product Dimensions CGH55030F (Package Type — 440166) PRELIMINARY Product Dimensions CGH55030P (Package Type — 440196) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH55030F2_P2 Rev 3.1 CREE Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Ryan Baker Marketing Cree, RF Components 919.407.7816 Tom Dekker Sales Director Cree, RF Components 919.407.5639 Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless