CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts CHM8968JPT CURRENT 7 Ampere CURRENT 6.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel & P-Channel Enhancement in the package .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) SO-8 Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) TA = 25°C unless otherwise noted Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 30 -30 V VGSS Gate-Source Voltage ±20 ±20 V 7.0 -6.2 28 -25 Maximum Drain Current - Continuous ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 62.5 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-08 RATING CHARACTERISTIC CURVES ( CHM8968JPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 1 VGS=10V, ID=7A 22 28 VGS=4.5V, ID=6A 30 40 VDS =5V, ID = 7A 25 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=15V, ID=5.8A VGS=10V 12 15.9 nC 1.3 2.3 V DD= 15V 8 16 I D = 1.0A , VGS = 10 V 5 10 RGEN= 2.7 Ω 25 50 5 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.3A , VGS = 0 V (Note 2) (Note 1) 1.3 A 1.2 V RATING CHARACTERISTIC CURVES ( CHM8968JPT ) P-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-6.2A 27 33 VGS=-4.5V, ID=-4A 40 52 VDS = -10V, ID = -4A 5 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time 18.7 VDS=-15V, ID=-6.2A 24.8 nC 3.7 VGS=-10V 2.3 V DD= -15V 12 I D = -1.0A , VGS = -10 V 5 10 RGEN= 6 Ω 57 114 21 42 24 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1A , VGS = 0 V (Note 1) (Note 2) -6.2 A -1.2 V RATING CHARACTERISTIC CURVES ( CHM8968JPT ) N-Channel Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 10 20 VG S = 10,6,4.5,4V VG S =3.5V 8 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 16 12 8 VG S =3.0V 6 4 TJ=25°C 4 2 0 0 TJ=125°C 0 2.0 1.5 1.0 0.5 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 5.0 6.0 VGS=7V ID=10A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 0 2.5 5 7.5 Qg , TOTAL GATE CHARGE (nC) 10 12.5 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 4.0 2.2 VDS=15V ID=5.8A THRESHOLD VOLTAGE TJ=-55°C 3.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge Vth , NORMALIZED GATE-SOURCE 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 10 1.3 1.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200 RATING CHARACTERISTIC CURVES ( CHM8968JPT ) P-Channel Typical Electrical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics 25 10 VG S =-10,-6V 8 -I D , DRAIN CURRENT (A) -I D , DRAIN CURRENT (A) 20 VG S =-5.0V 15 VG S =-4.5V 10 5 6 4 TJ=-55°C TJ=125°C 2 TJ=25°C VG S =-4.0V 0 0 1.0 4.0 5.0 2.0 3.0 -VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0 6.0 4.0 5.0 6.0 VGS=-10V ID=-6.2A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 0 2.5 5 7.5 Qg , TOTAL GATE CHARGE (nC) 10 12.5 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE -VGS , GATE TO SOURCE VOLTAGE (V) 3.0 2.2 VDS=-15V ID=-6.2A THRESHOLD VOLTAGE 2.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge Vth , NORMALIZED GATE-SOURCE 1.0 -VGS , GATE-TO-SOURCE VOLTAGE (V) 10 1.3 0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200