CHENMKO CHT2324PT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
CHT2324PT
CURRENT 4.2 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-59/SOT-346
FEATURE
* Small flat package. (SC-59 )
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
(2)
0.95
(3)
1.7~2.1
2.7~3.1
0.95
CONSTRUCTION
(1)
0.3~0.51
* N-Channel Enhancement
1.2~1.9
0.89~1.3
0.085~0.2
0~0.1
0.3~0.6
D (3)
CIRCUIT
2.1~2.95
(1) G
Dimensions in millimeters
S (2)
Absolute Maximum Ratings
Symbol
SC-59/SOT-346
TA = 25°C unless otherwise noted
Parameter
CHT2324PT
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±12
Maximum Drain Current - Continuous
4.2
ID
Units
V
V
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
16.0
1250
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
100
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2005-02
RATING CHARACTERISTIC CURVES ( CHT2324PT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
20
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 12V,VDS = 0 V
+100
nA
VGS = -12V, VDS = 0 V
-100
nA
1
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
0.5
VDS = VGS, ID = 50 µA
VGS=4.5V, ID=4.2A
35
45
VGS=2.5V, ID=3.6A
50
80
VDS =10V, ID = 4.0A
8
mΩ
S
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
10
VDS=10V, ID=4.2A
15
nC
2.3
VGS=4.5V
2.9
V DD= 10V
20
I D = 1.0A , VGS = 4.5 V
18
40
RGEN= 6 Ω
60
108
28
56
40
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 1.0A , VGS = 0 V
(Note 1)
(Note 2)
1.3
A
1.2
V
RATING CHARACTERISTIC CURVES ( CHT2324PT )
Typical Electrical Characteristics
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
25
10
V G S =4 . 5 V
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
TJ=125°C
3.5V
2.5V
8
VG S =2 . 0 V
6
4
2
20
TJ=-55°C
15
10
5
TJ=25°C
VG S =1 . 5 V
0
0
0
3.0
2.0
1.0
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
2.2
VDS=10V
ID=4.2A
VGS=4.5V
ID=4.2A
R DS(on) , NORMALIZED
4
3
2
1
0
0
2
4
6
Qg , TOTAL GATE CHARGE (nC)
8
10
Figure 5. Gate Threshold Variation with
Temperature
VDS=VGS
ID=250uA
THRESHOLD VOLTAGE
Vth , NORMALIZED GATE-SOURCE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
VGS , GATE TO SOURCE VOLTAGE (V)
5
1.3
3.0
2.0
1.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
TJ , JUNCTION T EMPERATURE (°C)
150
200