CM150DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 150 Amperes/1200 Volts TC Measured Point A F D S 4 - Mounting Holes H B E J U H T CM Q Q 3 - M6 Nuts K K K Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G N P R M C L G2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 2.44 62.0 B C 1.14 +0.04/-0.02 29 +1.0/-0.5 Dimensions Inches K 0.55 Millimeters 14.0 L 0.87 22.0 M 0.33 8.5 D 3.66±0.01 93.0±0.25 N 0.10 2.5 E 1.88±0.01 48.0±0.25 P 0.85 21.5 F 0.67 17.0 Q 0.98 25.0 G 0.16 4.0 R 0.11 2.8 H 0.24 6.0 S 0.25 Dia. 6.5 Dia. J 0.59 15.0 T 0.6 15.15 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-24H is a 1200V (VCES), 150 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 24 53 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24H Dual IGBTMOD™ U-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM150DU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 150 Amperes ICM 300* Amperes IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 890 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 400 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 150A, VGE = 15V, Tj = 125°C – – Volts Total Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V – 560 – nC Emitter-Collector Voltage* VEC IE = 150A, VGE = 0V – – 2.85 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions Min. Typ. Max. – – 22 – – 7.4 nf – – 4.4 nf VCC = 600V, IC = 150A, – – 200 ns VGE1 = VGE2 = 15V, – – 250 ns VCE = 10V, VGE = 0V Units nf td(off) RG = 2.1V, Resistive – – 300 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 150A, diE/dt = -300A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = -300A/µs – 0.82 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Rth(j-c)Q Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module Rth(c-f) Per Module, Thermal Grease Applied Contact Thermal Resistance 54 Symbol Thermal Resistance, Junction to Case Per IGBT 1/2 Module Min. Typ. – – Max. 0.14 Units °C/W – – 0.24 °C/W – 0.020 – °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-24H Dual IGBTMOD™ U-Series Module 150 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 300 12 VGE = 20V 240 11 180 10 120 9 60 8 240 180 120 60 0 0 0 2 4 6 8 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 0 20 60 120 180 240 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 IC = 150A 4 2 IC = 60A 4 8 12 16 101 100 1.0 0 0 20 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) td(off) td(on) 102 tr 101 VCC = 600V VGE = ±15V RG = 2.1 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) trr 102 Irr 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 Cres 100 101 102 GATE CHARGE, VGE 103 102 Coes COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) di/dt = -300A/µsec Tj = 25°C tf Cies 101 10-1 10-1 3.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 100 101 CAPACITANCE, Cies, Coes, Cres, (nF) 6 102 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 8 REVERSE RECOVERY CURRENT, Irr, (AMPERES) IC = 300A 300 VGE = 0V f = 1MHz Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 150A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 GATE CHARGE, QG, (nC) 55 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.14°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 56 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM150DU-24H Dual IGBTMOD™ U-Series Module 150 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3