MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE CM600HU-24F ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM 110 93 ±0.25 23.6 E E 10.7 6.5 6.5 17.5 G 2–M8NUTS 21.5 26.8 29 C 62 ±0.25 80 24.5 15.4 13.5 10.7 9.5 2–M4NUTS 14.5 5.5 Dimensions in mm CM 9 18 4–φ6.5MOUNTING HOLES Tc measured point 6.5 23 4 6 23 34 LABEL +1 -0.5 26 +1 -0.5 E E G C RTC CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 600 1200 600 1200 1900 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value Unit V V A A W °C °C Vrms N•m N•m N•m g 600 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 2 Unit Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 1.0 — 1.8 1.9 — — — 6600 — — — — — 43.2 — — — 0.015 — — 80 2.4 — 230 10 6.0 — 300 150 800 300 500 — 3.2 0.063 0.075 — 0.032*3 µA ICES VCE(sat) Collector-emitter saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf trr (Note 1) Reverse recovery time Qrr (Note 1) Reverse recovery charge VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Thermal resistance*1 Rth(j-c)R Contact thermal resistance Rth(c-f) Thermal resistance Rth(j-c’)Q RG Tj = 25°C Tj = 125°C IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V RG = 1.0Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part FWDi part Case to heat sink, Thermal compound applied*2 Case temperature measured point is just under the chips External gate resistance 10 mA V nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1000 9 10 600 8.5 400 8 200 0 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 15V Tj = 25°C Tj = 125°C 2.5 2 1.5 1 0.5 0 0 400 800 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 104 Tj = 25°C 7 5 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 11 800 0 CAPACITANCE Cies, Coes, Cres (nF) 9.5 Tj = 25°C VGE = 20V 4 3 IC = 1200A IC = 600A 2 IC = 240A 1 0 6 8 10 12 14 16 18 103 7 5 3 2 102 7 5 3 2 1 1.5 2 2.5 3 3.5 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Cies 102 7 5 3 2 101 3 2 0.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 7 5 0 GATE-EMITTER VOLTAGE VGE (V) 103 3 2 Tj = 25°C 3 2 101 20 SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Coes Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) td(off) tf td(on) 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 103 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3 2 Irr 102 trr 7 5 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 3 2 101 1 10 2 5 7 102 3 2 3 5 7 103 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.07K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.075K/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 600A 18 16 14 VCC = 400V 12 VCC = 600V 10 8 6 4 2 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Feb. 2009 4