COM140T COM340T COM240T COM440T (COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PA C K A G E 100V Thru 500V, Up To 14 Amp, N-Channel M O S F E Ts In Hermetic Metal Package FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS(on) DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ 25°C PART NUMBER COM140T COM240T COM340T COM440T VD S 100V 200V 400V 500V S C H E M ATIC R DS(on) .12 .21 .59 .90 ID(MAX) 14A 14A 10A 7A CONNECTION DIAGRAM 1. GATE 2. DRAIN 3. SOURCE 1 8 09 R0 3.1 - 1 2 3 3.1 STATIC TC = 25° unless otherwise noted P/N COM140T ELECTRICAL CHARACTERISTICS: STATIC TC = 25° unless otherwise noted P/N COM240T Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions B VD S S Drain-Source Breakdown 100 B VD S S Drain-Source Breakdown 200 V Voltage ID = 250 mA V GS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IG S S R Gate-Body Leakage Reverse -100 ID S S V G S = 0, 2.0 4.0 V V V G S = 0, V V D S = VG S, ID = 250 mA Voltage ID = 250 mA V D S = VG S,ID = 250 mA V GS(th) Gate-Threshold Voltage nA V G S = 20 V IGSSF Gate-Body Leakage Forward 100 nA V G S = 20 V nA V G S = - 20 V IG S S R Gate-Body Leakage Reverse - 100 nA V G S = - 20 V ID S S Zero Gate Voltage Drain 0.1 0.25 mA V D S = Max. Rat., VG S = 0 Current 0.2 1.0 mA Zero Gate Voltage Drain 0.1 0.25 mA V D S = Max. Rat., VG S = 0 Current 0.2 1.0 mA V D S = 0.8 Max. Rat., VG S = 0, 2.0 4.0 TC = 125° C On-State Drain Current1 14 V DS(on) Static Drain-Source On-State 1.40 1.73 2 VDS(on),VG S = 10 V ID(on) On-State Drain Current1 A VD S V V G S = 10 V, ID = 15 A V DS(on) Static Drain-Source On-State V G S = 10 V, ID = 15 A R DS(on) Static Drain-Source On-State Voltage1 14 1.8 2.1 A VD S V V G S = 10 V, ID = 10 A 2 VDS(on),VG S = 10 V Voltage1 R DS(on) Static Drain-Source On-State .12 Resistance1 0.21 V G S = 10 V, ID = 10 A 0.41 V G S = 10 V, ID = 10 A, Resistance1 R DS(on) Static Drain-Source On-State .22 V G S = 10 V, ID = 15 A, R DS(on) Static Drain-Source On-State Resistance1 TC = 125 C DYNAMIC TC = 125 C DYNAMIC gfs Forward Transductance1 C iss Input Capacitance (W ) 3.1 - 2 Resistance1 10 S(W ) V D S 1275 pF 2 VDS(on),ID = 15 A VG S = 0 gfs Forward Transductance1 C iss Input Capacitance (W ) ID(on) V D S = 0.8 Max. Rat., VG S = 0, TC = 125° C 6.0 S(W ) V D S 1000 pF 2 VDS(on),ID = 10 A VG S = 0 C oss Output Capacitance 550 pF V D S = 25 V C oss Output Capacitance 250 pF V D S = 25 V C rss Reverse Transfer Capacitance 160 pF f = 1 MHz C rss Reverse Transfer Capacitance 100 pF f = 1 MHz Td(on) Turn-On Delay Time 16 ns V D D = 30 V, ID @5 A Td(on) Turn-On Delay Time 17 ns V D D =75 V, ID @ 18 A tr Rise Time 19 ns R g = 5 W ,VG S =10 V tr Rise Time 52 ns R g =5 W ,VG S= 10 V Td(off) Turn-Off Delay Time 42 ns Turn-Off Delay Time 36 ns Fall Time 24 ns (MOSFET) switching times are essentially independent of operating temperature. Td(off) tf tf Fall Time 30 ns (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 27 A (Body Diode) IS M BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER D IS Source Current1 G tr Reverse Recovery Time the integral P-N - 2.0 V TC = 25 C, IS = -24 A, VG S = 0 VS D Diode Forward Voltage1 ns TJ = 150 C,IF =IS , tr Reverse Recovery Time 200 IS M Source Current1 A Junction rectifier. Diode Forward Voltage1 - 18 300msec, Duty Cycle 2%. G -1.5 V TC = 25 C, IS = -18 A, VG S = 0 ns TJ = 150 C,IF =IS , the integral P-N Junction rectifier. 350 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width D A (Body Diode) S Modified MOSPOWER - 72 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width A symbol showing - 108 (Body Diode) VS D Continuous Source Current (Body Diode) symbol showing 300msec, Duty Cycle 2%. S COM140T - COM440T 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: STATIC TC = 25° unless otherwise noted P/N COM340T ELECTRICAL CHARACTERISTICS: STATIC TC = 25° unless otherwise noted P/N COM440T Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions B VD S S Drain-Source Breakdown 400 B VD S S Drain-Source Breakdown 500 V Voltage V G S = 0, ID = 250 mA V GS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IG S S R Gate-Body Leakage Reverse -100 ID S S Zero Gate Voltage Drain 0.1 0.25 Current 0.2 1.0 2.0 4.0 V V V G S = 0, V V D S = VG S, ID = 250 mA Voltage ID = 250 mA V D S = VG S,ID = 250 mA V GS(th) Gate-Threshold Voltage 2.0 4.0 nA V G S = 20 V IGSSF Gate-Body Leakage Forward 100 nA V G S = 20 V nA V G S = - 20 V IG S S R Gate-Body Leakage Reverse - 100 nA V G S = - 20 V mA V D S = Max. Rat., VG S = 0 ID S S Zero Gate Voltage Drain 0.1 0.25 mA V D S = Max. Rat., VG S = 0 mA V D S = 0.8 Max. Rat., VG S = 0, Current 0.2 1.0 mA TC = 125° C On-State Drain Current1 10 V DS(on) Static Drain-Source On-State 2.5 2.9 2 VDS(on),VG S = 10 V ID(on) On-State Drain Current1 A VD S V V G S = 10 V, ID = 5 A V DS(on) Static Drain-Source On-State V G S = 10 V, ID = 5 A R DS(on) Static Drain-Source On-State Voltage1 4.5 3.2 3.52 A VD S V V G S = 10 V, ID = 4 A 2 VDS(on),VG S = 10 V Voltage1 R DS(on) Static Drain-Source On-State 0.59 Resistance1 0.90 V G S = 10 V, ID = 4 A Resistance1 R DS(on) Static Drain-Source On-State 1.2 V G S = 10 V, ID = 5 A, Resistance1 R DS(on) Static Drain-Source On-State 1.8 V G S = 10 V, ID = 4 A, Resistance1 DYNAMIC TC = 125 C DYNAMIC gfs Forward Transductance1 C iss Input Capacitance 1150 4.0 (W ) 3.1 - 2 TC = 125 C 4.4 S(W ) V D S pF 2 VDS(on),ID = 5 A VG S = 0 gfs Forward Transductance1 C iss Input Capacitance 1225 4.0 (W ) ID(on) V D S = 0.8 Max. Rat., VG S = 0, TC = 125° C 4.8 S(W ) V D S pF 2 VDS(on),ID = 4 A VG S = 0 C oss Output Capacitance 165 pF V D S = 25 V C oss Output Capacitance 200 pF V D S = 25 V C rss Reverse Transfer Capacitance 70 pF f = 1 MHz C rss Reverse Transfer Capacitance 85 pF f = 1 MHz Td(on) Turn-On Delay Time 17 ns V D D = 175 V, ID = 5 A Td(on) Turn-On Delay Time 17 ns V D D = 200 V, ID = 4 A tr Rise Time 12 ns R g = 5 W ,VD S =10V tr Rise Time 5 ns R g = 5 W ,VD S =10 V Td(off) Turn-Off Delay Time 45 ns Td(off) Turn-Off Delay Time 42 ns tf Fall Time 30 ns tf Fall Time 14 ns (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 10 A IS M D IS Source Current1 G -2 V TC = 25 C, IS = -10 A, VG S = 0 VS D Diode Forward Voltage1 ns TJ = 150 C,IF =IS , tr Reverse Recovery Time Junction rectifier. Diode Forward Voltage1 tr Reverse Recovery Time 530 IS M Source Current1 A the integral P-N -8 300msec, Duty Cycle 2%. G -2 V TC = 25 C, IS = -18 A, VG S = 0 ns TJ = 150 C,IF =IS , the integral P-N Junction rectifier. 700 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width D A (Body Diode) S Modified MOSPOWER - 32 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width A symbol showing - 40 (Body Diode) VS D Continuous Source Current (Body Diode) symbol showing 300msec, Duty Cycle 2%. S 2 COM140T - COM440T (Body Diode) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER 3.1 COM140T - COM440T ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter VD S Drain-Source Voltage VD G R COM140T COM240T COM340T COM440T Units 100 200 400 500 V Drain-Gate Voltage (RG S = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current 2 ± 14 ± 14 ± 10 ±8 A ID @ TC = 100°C Continuous Drain Current 2 ± 14 ± 11 ±6 ±5 A ID M Pulsed Drain Current1 ± 56 ± 56 ± 40 ± 32 A VG S Gate-Source Voltage ± 20 ± 20 ± 20 ± 20 V P D @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W P D @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C .015 .015 .015 .015 W/°C Junction To Ambient Linear Derating Factor TJ Operating and Tstg Storage Temperature Range -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 300 300 1.00 °C/W 65 °C/W 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2 Package pin limitation = 10 Amps -55 to 150 -55 to 150 -55 to 150 300 300 °C °C 2%. THERMAL RESISTA N C E R thJC Junction-to-Case R thJA Junction-to-Ambient POWER DERATING Free Air Operation MECHANICAL OUTLINE TO-257 .200 .190 .420 .410 3.1 .045 .035 .665 .645 .150 .140 .537 .527 .430 .410 .038 MAX. .750 .500 .035 .025 .100 TYP. .005 .120 TYP. 205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246