J. I/ roaucti, One.. U TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 USA VN2222KM N-Channel Enhancement Mode MOSPOWER PRODUCT SUMMARY APPLICATIONS • Switching Regulators Part Number BVDSS rDS(ON) Volts (ohms) VN10KM 60 5 TO- 237 VN2222KM 60 7.5 TO- 237 • Converters • Motor Drivers Package PIN 1 - Source PIN 2 - Gate PIN 3 & TAB - Drain TO-237 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) Parameter VDS VN10KM VN2222KM Units 60 60 V Drain-Source Voltage VDGR Drain-Gate Voltage (RQS = 1 Mn> 60 V I D @ T C = 25° C Continuous Drain Current ±0.3 ±0.25 A I D @TC = 100° c Continuous Drain Current ±0.2 ±0.16 A ±1 ±1 A + 15, -0.3 + 15, -0.3 V 1 1 'DM Pulsed Drain Current1 VGS Gate-Source Voltage 60 PD Max Continuous Power Dissipation PD Max Pulse^ Power Dissipation 3.9 3.9 Junction to Case Linear Derating Factor 0.031 0.031 W/° C Junction to Ambient Linear Derating Factor 0.008 0.008 W/° C -55 To +150 -55 To +150 °C Tj Operating and Tstg Storage Temperature Range Lead Temperature 11 /1 6" from case for 1 0 sees.} 300 300 1 Pulse Test: Pulsewidth < 300Msec, Duty Cycle < 2% 2 1 Sec Continuous Power Single Pulse Power Derating 4.8 3.2 5 2.4 32°C/W 1.6 0.8 <IK • 0 25 50 75 100 125 150 Tc - CASE TEMPERATURE (°C) 175 W ° c ELECTRICAL CHARACTERISTICS (Tc - 25° C unless otherwise noted) STATIC Parameter B^DSS Drain-Source Breakdown Voltage ^GS(lh) Gate-Threshold Voltage 'GSSF Gate-Body Leakage Forward 'OSS Zero Gate Voltage Drain Current 'D(on) On-State Drain Current^ v DS(on) Static Drain-Source On-State Voltage 1 Type Min. All 60 R DS(on) Static Drain-Source On-State Resistance 1 Static Drain-Source On-State Resistance 1 Max. Units 120 V Test Conditions v GS = ° ID = 100 MA VN10KM VN2222KM 1.5 1.5 2.5 2.5 V All 1 100 nA V GS = 15V,V DS = 0 All 0.1 10 ^A VDS=45V A V DS^2V DS(ON) , All R0S(on) Typ. 0.8 0.6 0.75 1.5 VDS = VGS. ID = 1 mA ,VGS=0 V GS = 10V All 1.2 1.5 V v GS = 5v VN10KM VN2222KM 2 3 2.5 3.75 V VGS = IOV ,iD = °-5A ,i D =°- 2 A All 6 7.5 n V GS = 5V , ID = 0.2A VN10KM VN2222KM 4 5 n V G S =10V , | D =0.5A 6 7.5 VN10KM 7.2 9 n V GS =10V. ID =°-5A. TC =125°C VN2222KM 10.8 13.5 n VGS=10V, ID-0.5A, Tc=125rC DYNAMIC 100 Forward Transductance^ All Ciss Input Capacitance All 40 60 pF C oss Output Capacitance All 17 25 pF pF gfs 200 mS Crss Reverse Transfer Capacitance All 3 5 tQjsj Turn-On Time All 7 10 ime ns ns tQFF Turn-Off Time Time All 7 10 ns ns V D S>2V DS(ON) ,I D = 0.5A VGs-0 f - 1 MHz ,Vos- 2 5 v V D D =15V , | D s 0.6A R g = 25fi , R L = 23n (MOSFET switching times are essentially independent of operating temperature.} THERMAL RESISTANCE FithJC Junction-to-Case All R thJA Junction-to-Ambient All 26 32 °C/W 125 °C/W Free Air Operation BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Ig Continuous Source Current (Body Diodel ISM Source Current' (Body Diode) VSD Diode Forward Voltage 1 VN10KM -0.3 A VN2222KM -0.25 A -1 All VN10KM VN2222KM 1 Pulse Test: Pulse Width < 300 MSBC, Duty Cycle < 2% -0.85 -0.85 Modified MOSPOWER symbol showing the integral P-N Junction rectifier ?° A V V TC=25°C, IS=-0.3A, VGS = 0 TC=25°C, IS=-0.25A, VGS = 0