OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST OM6102ST OM6104ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package Bi-Lateral Zener Gate Protection (Optional) Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener clamps in the OM6101ST series. MAXIMUM RATINGS PART NUMBER OM6001ST/OM6101ST OM6002ST/OM6102ST OM6003ST/OM6103ST OM6004ST/OM6104ST Note: VDS 100 V 200 V 400 V 500 V RDS(on) .20 .44 1.05 1.60 OM6101ST thru OM6104ST is supplied with zener gate protection. OM6001ST thru OM6004ST is supplied without zener gate protection. SCHEMATIC WITHOUT ZENER CLAMPS OM6001ST - 6004ST WITH ZENER CLAMPS OM6101ST - 6104ST 1 - DRAIN 1 - DRAIN 3 - GATE 3 - GATE ZENERS 2 - SOURCE 2 - SOURCE 4 11 R4 Supersedes 1 07 R3 3.1 - 71 ID 14 A 9A 5.5 A 4.5 A 3.1 (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: STATIC P/N OM6101ST / OM6001ST (100V) Parameter BVDSS Drain-Source Breakdown Voltage Min. Typ. Max. Units Test Conditions 100 (TC = 25°C unless otherwise noted) STATIC P/N OM6102ST / OM6002 ST (200V) V Parameter VGS = 0, BVDSS Drain-Source Breakdown ID = 250 mA Voltage Min. Typ. Max. Units Test Conditions 200 V VGS = 0, ID = 250 mA VGS(th) Gate-Threshold Voltage 4.0 V VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage 4.0 V VDS = VGS, ID = 250 mA IGSS Gate-Body Leakage (OM6101) ± 500 nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6102) ± 500 nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6001) ± 100 nA VGS = ± 20 V IGSS Gate-Body Leakage (OM6002) ± 100 nA VGS = ± 20 V IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 0.2 1.0 mA 0.2 1.0 mA 2.0 Current On-State Drain Current1 14 A 1.2 Voltage1 RDS(on) Static Drain-Source On-State 1.60 V RDS(on) Static Drain-Source On-State ID(on) On-State Drain Current1 9.0 VDS(on) Static Drain-Source On-State VGS = 10 V, ID = 8 A 1.25 Voltage1 RDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State V VGS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A, TC = 125 C DYNAMIC (W ) 3.1 - 72 DYNAMIC VDS 2 VDS(on), VGS = 10 V 0.88 Resistance1 TC = 125 C 2.2 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A 0.44 Resistance1 VGS = 10 V, ID = 8 A, 0.40 Resistance1 VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8 A 0.20 Resistance1 Current TC = 125° C gfs Forward Transductance1 gfs Ciss Input Capacitance 750 pF Forward Transductance1 VGS = 0 Ciss Input Capacitance 780 Coss Output Capacitance 250 pF pF VDS = 25 V Coss Output Capacitance 150 pF Crss Reverse Transfer Capacitance VDS = 25 V 100 pF f = 1 MHz Crss Reverse Transfer Capacitance 55 pF f = 1 MHz td(on) tr Turn-On Delay Time 15 ns VDD = 30 V, ID @ 8 A td(on) Turn-On Delay Time 9 ns VDD = 75V, ID @ 5.0 A Rise Time 35 ns Rg = 7.5 W , VDS = 10 V tr Rise Time 18 ns Rg = 7.5 W , VGS =10 V td(off) Turn-Off Delay Time 38 ns td(off) Turn-Off Delay Time 45 ns tf Fall Time 23 ns tf Fall Time 27 ns 4.0 S(W ) VDS 2 VDS(on), ID = 8 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (Body Diode) - 14 A - 56 A - 2.5 - 2.5 V V 3.0 (W ) ID(on) VDS(on) Static Drain-Source On-State VDS = 0.8 Max. Rat., VGS = 0, 2.0 5.8 S(W ) VDS 2 VDS(on), ID = 5.0 A VGS = 0 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER D IS Continuous Source Current (Body Diode) symbol showing -9 A - 36 A -2 -2 V V Modified MOSPOWER G ISM Source Current1 (Body Diode) VSD Diode Forward Voltage1 VSD Diode Forward Voltage1 trr Reverse Recovery Time 100 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. ns G ISM the integral P-N Junction rectifier. D symbol showing S Source Current1 (Body Diode) TC = 25 C, IS = -14 A, VGS = 0 VSD Diode Forward Voltage1 TC = 25 C, IS = -12 A, VGS = 0 VSD Diode Forward Voltage1 TJ = 150 C, IF = IS, trr Reverse Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 250 ns the integral P-N Junction rectifier. S TC = 25 C, IS = -9 A, VGS = 0 TC = 25 C, IS = -8 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms OM6001ST - OM6104ST 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: STATIC P/N OM6103ST / OM6003ST (400V) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown Voltage 400 (TC = 25°C unless otherwise noted) STATIC P/N OM6104ST / OM6004ST (500V) V Parameter VGS = 0, Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown ID = 250 mA Voltage 500 V VGS = 0, ID = 250 mA VGS(th) Gate-Threshold Voltage 4.0 V VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage 4.0 V VDS = VGS, ID = 250 mA IGSS Gate-Body Leakage (OM6103) ± 500 nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6104) ± 500 nA VGS = ± 12.8 V IGSS Gate-Body Leakage (OM6003) ± 100 nA VGS = ± 20 V IGSS Gate-Body Leakage (OM6004) ± 100 nA VGS = ± 20 V IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 0.2 1.0 mA 0.2 1.0 mA 2.0 Current ID(on) On-State Drain Current1 5.5 VDS(on) Static Drain-Source On-State A 2.4 Voltage1 RDS(on) Static Drain-Source On-State 3.15 V RDS(on) Static Drain-Source On-State VDS 2 VDS(on), VGS = 10 V ID(on) On-State Drain Current1 4.5 VDS(on) Static Drain-Source On-State VGS = 10 V, ID = 3.0 A 3.25 4.00 Voltage1 RDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State 2.9 DYNAMIC VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A, 3.3 TC = 125 C DYNAMIC (W ) gfs Forward Transductance1 gfs Ciss Input Capacitance 700 pF Forward Transductance1 VGS = 0 Ciss Input Capacitance 700 Coss Output Capacitance 70 pF pF VDS = 25 V Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance VDS = 25 V 20 pF f = 1 MHz Crss Reverse Transfer Capacitance 30 pF f = 1 MHz td(on) tr Turn-On Delay Time 18 ns VDD = 175 V, ID @ 3.0 A td(on) Turn-On Delay Time 18 ns VDD = 225 V, ID @ 2.5 A Rise Time 20 ns Rg = 10 W ,VGS = 10 V tr Rise Time 20 ns Rg = 7.5 W , VGS = 10 V td(off) Turn-Off Delay Time 40 ns td(off) Turn-Off Delay Time 42 ns tf Fall Time 25 ns tf Fall Time 25 ns 3.0 3.6 S(W ) VDS 2 VDS(on), ID = 3.0 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (Body Diode) (Body Diode) Voltage1 Diode Forward VSD Diode Forward Voltage1 trr Reverse Recovery Time - 22 A D IS - 1.6 - 2.5 470 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. V V ns Continuous Source Current (Body Diode) symbol showing ISM the integral P-N Junction rectifier. S(W ) VDS 2 VDS(on), ID = 2.5 A VGS = 0 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER G Source Current1 VSD A 2.8 S Source Current1 (Body Diode) Voltage1 TC = 25 C, IS = -5.5 A, VGS = 0 VSD Diode Forward TC = 25 C, IS = -4.5 A, VGS = 0 VSD Diode Forward Voltage1 TJ = 150 C, IF = IS, trr Reverse Recovery Time dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 430 - 4.5 A - 18 A - 1.4 -2 V V ns Modified MOSPOWER D symbol showing the integral P-N G Junction rectifier. S TC = 25 C, IS = -4.5 A, VGS = 0 TC = 25 C, IS = -4 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms 3.1 OM6001ST - OM6104ST ISM - 5.5 2.5 (W ) 3.1 - 73 Resistance1 TC = 125 C VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A 1.6 Resistance1 VGS = 10 V, ID = 3.0 A, 2.0 Resistance1 Current TC = 125° C VGS = 10 V, ID = 3.0 A 1.05 Resistance1 VDS = 0.8 Max. Rat., VGS = 0, 2.0 OM6001ST - OM6104ST ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) OM6001ST OM6002ST OM6003ST OM6004ST Units OM6101ST OM6102ST OM6103ST OM6104ST Parameter VDS Drain-Source Voltage 100 200 400 500 V VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current2 ±14 ±9 ±5.5 ±4.5 A ID @ TC = 100°C Continuous Drain Current2 ±9 ±6 ±3.5 ±3 A IDM Pulsed Drain Current1 ±56 ±36 ±22 ±18 A PD @ TC = 25°C Maximum Power Dissipation 50 50 50 50 W PD @ TC = 100°C Maximum Power Dissipation 20 20 20 20 W Junction To Case Linear Derating Factor 0.4 0.4 0.4 0.4 W/°C Junction To Ambient Linear Derating Factor .015 .015 .015 .015 W/°C TJ Operating and Tstg Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package Pin Limitations = 16 amps THERMAL RESISTANCE (MAXIMUM) at TA = 25°C RthJC Junction-to-Case 2.5 °C/W RthJA Junction-to-Ambient 65 °C/W Free Air Operation MECHANICAL OUTLINE WITH PIN CONNECTION 3.1 PD - POWER DISSIPATION (WATTS) POWER DERATING .200 .190 .420 .410 90 .045 .035 75 RθJC = 2.5° C/W 60 .665 .645 .150 .140 45 .537 .527 .430 .410 30 1 2 3 15 .038 MAX. 0 0 25 50 75 100 125 150 175 TC - CASE TEMPERATURE (C°) Pin 1: Drain Pin 2: Source Pin 3: Gate .035 .025 .750 .500 .005 .100 TYP. .120 TYP. PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246