CPH6901 Ordering number : ENN8257 N-Channel Silicon Junction FET CPH6901 Low-Frequency General-Purpose Amplifier, Differential Amplifier, Analog Switch Applications Features • • • Composite type with 2 FET contained in a CP package currently in use, improving the mounting efficiency greatly. The CPH6901 is formed with two chips, being equivalent to the 2SK303, placed in one package. Optimal for differential amplification due to excellent thermal equilibrium and pair capability. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 30 Gate-to-Drain Voltage VGDS --30 V 10 mA Drain Current IG ID Allowable Power Dissipation PD Total Power Dissipation Junction Temperature Storage Temperature Tstg Gate Voltage V 10 mA 200 mW PT 300 mW Tj 150 °C --55 to +150 °C 1 unit Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS Gate-to-Source Leakage Current IGSS Cutoff Voltage Gate-to-Source Voltage Difference Drain Current VGS(off) ∆VGS Ratings min IG=--10µA, VDS=0 VGS=--20V, VDS=0 --30 VDS=10V, ID=1µA --0.3 1.2 0.9 yfs IDSS Small / IDSS Large VDS=10V, VGS=0, f=1MHz 3.0 yfsSmall / yfs / Large 0.9 Input Capacitance Ciss Reverse Transfer Capacitance Crss max VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz Static Drain-to-Source On-State Resistance RDS(on) VDS=10mV, VGS=0 The specifications shown above are for each individual transistor. Unit V --0.8 VGS Large--VGS Small VDS=10V, ID=1mA VDS=10V, VGS=0(FET1) Forward Transfer Admittance Ratio typ --1.0 IDSS Drain Current Ratio Forward Transfer Admittance Conditions --1.25 nA V 50 mV 3.0 mA 4.5 mS 5.0 pF 0.9 pF 250 Ω Marking : 1G Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505GB TS IM TA-100274 No.8257-1/4 CPH6901 Package Dimensions unit : mm 2248 Electrical Connection 6 1 : Drain1 2 : Source1 3 : Gate2 4 : Source2 5 : Drain2 6 : Gate1 3 0.2 2.8 0.05 0.6 1.6 0.6 4 4 0.15 0.4 5 5 2 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base 0.95 0.9 0.2 2.9 1 ID -- VDS 5 0.7 4 3 VGS=0 2 --0.1V Drain Current, ID -- mA 4 --0.2V --0.3V 1 VGS=0 3 --0.1V 2 --0.2V --0.3V 1 --0.4V --0.4V 0 0 0 1 2 3 4 5 Drain-to-Source Voltage, VDS -- V 0 ID -- VGS 5 10 20 25 30 ITR10351 ID -- VGS 10 VDS=10V 15 Drain-to-Source Voltage, VDS -- V ITR10350 5 VDS=10V 4 8 4 A m 5.0 = S I DS mA °C --2 5 2 2 3.0 C 75° A 1.2m 0 --1.50 --1.25 --1.00 --0.75 --0.50 --0.25 Gate-to-Source Voltage, VGS -- V 0 ITR10352 3 Ta = 6 Drain Current, ID -- mA Drain Current, ID -- mA Top view 3 SANYO : CPH5 ID -- VDS 5 2 --1.2 --1.0 --0.8 --0.6 Drain Current, ID -- mA 1 1 °C 25 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0 ITR10353 No.8257-2/4 CPH6901 VGS(off) -- IDSS 3 2 --1.0 7 5 3 2 5 7 2 1.0 3 5 10 ITR10354 yfs -- IDSS 7 5 3 2 2 1.0 3 5 7 10 ITR10356 Drain Current, IDSS -- mA 10n D S G 3 1.0 7 5 3 2 3 5 7 2 1.0 3 5 ID DC 1n 3 100p 3 10p 7 10 ITR10355 RDS(on) -- IDSS VDS=10mV VGS=0 5 3 2 100 2 1.0 3 5 7 10 ITR10357 Ciss -- VDS VGS=0 f=1MHz 3 DC 2 10 7 5 3 2 3 1p 5 ID=1mA 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 1.0 7 25 1.0 2 3 5 10 2 3 VGS=0 f=1MHz 5 7 ITR10359 NF -- f 16 7 7 Drain-to-Source Voltage, VDS -- V ITR10358 Crss -- VDS 10 VDS=10V Rg=1kΩ 14 5 Noise Figure, NF -- dB Reverse Transfer Capacitance, Crss -- pF 2 5 Input Capacitance, Ciss -- pF Gate-to-Drain Leakage Current, IGDL -- A IGDL 3 A 2m =1. I DSS 3 Drain Current, IDSS -- mA IGDL -- VDS 100n A 3.0m 5 7 7 1.0 7 A 5.0m 7 Drain Current, ID -- mA Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Forward Transfer Admittance, yfs -- mS 10 5 10 7 VDS=10V VGS=0 f=1kHz 2 VDS=10V f=1kHz 2 0.1 7 Drain Current, IDSS -- mA 3 yfs -- ID 2 VDS=10V ID=1µA Forward Transfer Admittance, yfs -- mS Cutoff Voltage, VGS(off) -- V 5 3 2 1.0 7 5 12 10 8 6 4 ID=0.1mA 0.3mA 2 3 2 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 ITR10360 0 10 3.0mA 2 5 100 2 5 1k 2 5 10k 2 Frequency, f -- Hz 5 100k 2 5 1M ITR10361 No.8257-3/4 CPH6901 NF -- f 12 VDS=10V ID=3.0mA Collector Dissipation, PD -- mW 11 9 8 7 6 kΩ =1 Rg Noise Figure, NF -- dB 10 5 4 3 2 1 10 kΩ 100kΩ 0 10 2 PD -- Ta 240 200 160 120 80 40 0 5 100 2 5 1k 2 5 10k 2 Frequency, f -- Hz 5 100k 2 5 1M ITR10362 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 ITR10363 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8257-4/4