Preliminary Datasheet CR6CM-12B Thyristor R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features Non-Insulated Type Planar Passivation Type IT (AV) : 6 A VDRM : 600 V IGT : 10 mA Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 3 1 12 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 6 CR6CM-12B Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Preliminary Symbol IT (RMS) IT (AV) Ratings 9.4 6 Unit A A ITSM 90 A I2 t 41 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +150 – 40 to +150 2.0 W W V V A °C °C g Conditions Commercial frequency, sine half wave Note1 180° conduction, Tc = 121°C 50Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0/5.0 Unit mA Test conditions Tj = 125°C/150°C, VRRM applied Repetitive peak off-state current On-state voltage IDRM VTM — — — — 2.0/5.0 1.7 mA V Tj = 125°C/150°C, VDRM applied Gate trigger voltage VGT — — 1.0 V VGD 0.2/0.1 — — V IGT IH Rth (j-c) — — — — 15 — 10 — 2.5 mA mA °C/W Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Tc = 25°C, ITM = 20 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case. 2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Page 2 of 6 CR6CM-12B Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 100 Surge On-State Current (A) 102 101 1 2 3 4 VFGM = 6V Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 102 101 Gate Trigger Current vs. Junction Temperature PGM = 5W PG(AV) = 0.5W IGT = 10mA VGD = 0.1V 101 IFGM = 2A 102 103 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 –40 20 Gate Characteristics 100 101 40 Conduction Time (Cycles at 50Hz) VGT = 1V 10-1 60 On-State Voltage (V) 102 101 80 0 100 5 × 100 (%) 100 0 0 40 80 120 Junction Temperature (°C) R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 125°C 102 101 100 10–1 –3 10 10–2 10–1 100 101 Time (s) Page 3 of 6 CR6CM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 16 160 14 140 θ 120 360° Case Temperature (°C) Average Power Dissipation (W) Maximum Average Power Dissipation (Single-Phase Half Wave) 180° 12 10 120° 90° 60° θ = 30° 8 6 θ 4 360° 2 0 0 4 6 8 10 120° 90° 40 60° θ = 30° 0 2 4 6 8 10 12 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 14 12 180° 120° θ = 30° 10 90° 60° 8 6 4 θ 2 360° θ Case Temperature (°C) Average Power Dissipation (W) 180° 60 0 12 16 140 θ 120 360° 100 Resistive loads 2 4 6 8 10 60 180° 120° 40 90° 20 0 12 θ 80 Resistive loads 0 0 0 θ = 30° 2 4 60° 6 8 10 12 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 16 160 140 14 DC 270° 180° 120° 90° 12 60° 10 θ = 30° 8 6 θ 4 360° 2 0 Resistive, inductive loads 0 2 4 6 8 10 Average On-State Current (A) R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 12 Case Temperature (°C) Average Power Dissipation (W) 80 20 Resistive, inductive loads 2 Resistive, inductive loads 100 120 100 Resistive, inductive loads 80 60 θ 360° 40 180° 270° 60° DC 90° 120° θ = 30° 20 0 0 2 4 6 8 10 12 Average On-State Current (A) Page 4 of 6 Preliminary 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125°C 140 120 100 80 60 40 20 0 1 10 102 103 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 150°C 140 120 100 80 60 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 80 Typical Example 70 Turn-Off Time (μs) Breakover Voltage (dv/dt = vV/μs) Holding Current (Tj = t°C) Holding Current (Tj = 25°C) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Junction Temperature (°C) × 100 (%) Typical Example Breakover Voltage (dv/dt = vV/μs) 160 Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) CR6CM-12B 102 Typical Example 60 50 40 30 Distribution 20 IT = 6A, –di/dt = 5A/μs, VD = 300V, dv/dt = 20V/μs VR = 50V 10 101 –40 0 40 80 120 Junction Temperature (°C) R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 160 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 5 of 6 CR6CM-12B Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 -1 10 100 101 102 Gate Current Pulse Width (μs) Package Dimensions Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code T220AB MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 Ordering Information Orderable Part Number CR6CM-12B#B00 Bag CR6CM-12B-A8#B00 Tube Note: Packing Quantity 100 pcs. 50 pcs. Remark Straight type A8 Lead form Please confirm the specification about the shipping in detail. R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0