SONY CXA2726GA

PDIC for DVD±R/RW and RAM
Preliminary
Preliminary
CXA2726GA
Description
The CXA2726GA is a PDIC (photodetector IC) developed as a photodetector for the optical pickup of
DVD±R/RW and RAM drives.
The photodiode and circuits operate at high speed to allow high-speed read and write. This IC also has a sleep
function and small COB (Chip On Board) package.
(Applications: Optical pickups for DVD±R/RW and RAM)
Features
‹ Wide band (120MHz)
‹ RF differential output (Read Mode: A to D signal addition output)
‹ WPP output (WPP1 = A + B, WPP2 = C + D signal addition output)
‹ Mode switching function (6-Mode switching + Power save mode: SW1, SW2)
‹ 12-division photodiode supporting DPP
‹ Small COB package of Land Grid Array type
‹ Sleep function (Power save mode)
Package
18-pin LFLGA (Plastic)
Structure
Bipolar silicon monolithic IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
PE05717-PS
CXA2726GA
Absolute Maximum Ratings
(Ta = 25°C)
Š Supply voltage
VCC
5.5
V
Š Operating temperature
Topr
–10 to +80
°C
Š Storage temperature
Tstg
–40 to +100
°C
Š Allowable power dissipation
PD
550
Š Supply voltage 1
VCC
4.5 to 5.5
V
Š Supply voltage 2
VC
1.3 to 2.5
V
Š SW1, SW2: Low
VSW
0 to 0.4
V
Š SW1, SW2: Middle
VSW
1.2 to 2.0
V
Š SW1, SW2: High
VSW
2.9 to VCC
V or OPEN
mW
Operating Conditions
Output Sensitivity Table
Mode
1
2
Name
Read
3
4
5
Write
6
SLEEP
Sleep
SW1
SW2
Main
Sub
RF
WPP
Low
Middle
10.00
40.20
8.95
1.67
Low
High/Hi-Z
22.40
90.00
20.10
3.73
Middle
Middle
1.30
5.23
—
0.87
Middle
High/Hi-Z
2.91
11.71
—
1.95
High/Hi-Z
Middle
1.00
4.02
—
0.67
High/Hi-Z
High/Hi-Z
2.24
9.01
—
1.50
Don’t care
Low
—
—
—
—
-2-
Unit
mV/µW
CXA2726GA
Block Diagram
A'
A
A
9
SW1
3
SW2
2
Vcc
6
Vc
B'
B
B
8
Vc
C'
10 Vc
C
C 13
Vc
1 GND
D'
D
D 11
12 NC
Vc
E
Vc
I
E+I
A
7
Vc
F
WPP1
Vc
J
F+J
5
B
C
4
14 WPP2
D
Vc
G
Vc
K
A'
B'
C'
D'
G+K 17
Vc
H
18 RF+
Vc
L
Vcc
H+L 15
Vc
Vc
Arithmetic Formulas
y RF+ = 0.895 × (Ao + Bo + Co + Do)
y RF– = –0.895 × (Ao + Bo + Co + Do)
y WPP1 = (Ao + Bo) × α
y WPP2 = (Co + Do) × α
* In each mode, α is as follows.
Mode1 and 2 : 0.167
Mode3 to 6 : 0.669
* RF+ and RF– operate only in Mode-1 and Mode-2.
-3-
16 RF–
CXA2726GA
Pin Configuration
(Top View)
14
15
16
17
18
WPP2
H+L
RF–
G+K
RF+
10
11
12
13
Vc
D
NC
C
6
7
8
9
A
E+I
B
SW1
1
2
3
4
5
GND
VCC
SW2
F+J
WPP1
Pin Description
Pin
No.
1
Symbol
GND
I/O
Equivalent circuit
Description
For a dual power supply:
Negative power supply
For a single power supply: GND
I
1
2
VCC
I
Positive power supply.
Mode switching input.
0 to 0.4V: Low
1.2 to 2.0V: Middle
2.9V to VCC: High
30k
3
SW2
I
1k
3
-4-
CXA2726GA
Pin
No.
7
4
17
15
Symbol
E+I
F+J
G+K
H+L
I/O
Equivalent circuit
Description
7
O
Output of voltage signals converted
from optical signals.
4
17
15
5
14
WPP1
WPP2
O
5
14
9k
6k
6
8
13
11
A
B
C
D
Non-inverted output of added A to D
signals.
3k
6
O
6k
WPP1 = A + B
WPP2 = C + D
Output of voltage signals converted
from optical signals.
8
13
11
Mode switching input.
0 to 0.4V: Low
1.2 to 2.0V: Middle
2.9V to VCC: High
60k
9
SW1
I
1k
9
10
VC
I
For a dual power supply: GND
For a single power supply:
Center voltage input
10
-5-
CXA2726GA
Pin
No.
Symbol
I/O
Equivalent circuit
Description
16
RF–
O
16
Inverted output of added A to D
signals.
18
RF+
O
18
Non-inverted output of added A to D
signals.
-6-
CXA2726GA
Electrical and Optical Characteristics 1 (Mode-1: Read Mode/Low Gain)
(VCC = 5.0V, VC = 1.4V, VSW1 = 0V, VSW2 = 1.65V, Ta = 25°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
—
44.0
57.5
mA
Current consumption
ICC
In the dark
Output offset voltage
(A to D)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(E+I to H+L)
Voff
In the dark, VC reference
–35
0
35
mV
Output offset voltage
(WPP1, WPP2)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(RF+)
Voff
In the dark, VC reference
–110
0
110
mV
Output offset voltage
(RF–)
Voff
In the dark, VCC – VC reference
–110
0
110
mV
(A + B) – (C + D), In the dark
–30
0
30
mV
(A + D) – (B + C), In the dark
–30
0
30
mV
(A + C) – (B + D), In the dark
–30
0
30
mV
(G + H + K + L) – (E + F + I + J),
In the dark
–30
0
30
mV
A + B + C + D, In the dark
–50
0
50
mV
E + F + G + H + I + J + K + L,
In the dark
–50
0
50
mV
(RF+) – (RF–), In the dark
–160
0
160
mV
Output offset matrix
∆Voff
Offset temperature drift
(A to D) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(E+I to H+L) *
∆Voff/T
In the dark
–150
0
150
µV/°C
Offset temperature drift
(WPP1, WPP2) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(RF+, RF–) *
∆Voff/T
In the dark
–1
0
1
mV/°C
Output voltage
(A to D) *
Vo
λ = 650nm, 780nm, Po = 10µW
7.5
10.0
12.5
mV/µW
Output voltage
(E+I to H+L) *
Vo
λ = 650nm, 780nm, Po = 10µW
30.15
40.20
50.25 mV/µW
Output voltage
(WPP1, WPP2) *
Vo
λ = 650nm, 780nm, Po = 10µW
1.25
1.67
2.09
Output voltage
(RF+) *
Vo
λ = 650nm, 780nm, Po = 10µW
6.71
8.95
11.19 mV/µW
Output voltage
(RF–) *
Vo
λ = 650nm, 780nm, Po = 10µW
–11.19
–8.95
–6.71 mV/µW
Output voltage ratio
(E+I to H+L)/(A to D) *
VOR
λ = 650nm, 780nm, Po = 10µW
3.91
4.12
4.33
—
Output voltage ratio
VOR
((RF+) + (RF–))/(A to D) *
λ = 650nm, 780nm, Po = 10µW
1.77
1.86
1.95
—
Maximum output
potential
(A to D, E+I to H+L)
λ = 650nm, 780nm, Po = 1mW
3.8
4.0
—
V
Vomax
-7-
mV/µW
CXA2726GA
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Maximum output
potential
(WPP1, WPP2)
Vomax
λ = 650nm, 780nm, Po = 1mW
2.0
2.2
—
V
Maximum output
potential
(RF+)
Vomax
λ = 650nm, 780nm, Po = 1mW
3.8
4.0
—
V
Minimum output potential
(RF–)
Vomin
λ = 650nm, 780nm, Po = 1mW
—
1.0
1.2
V
Frequency response
(A to D) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
(E+I to H+L) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
20
30
—
MHz
Frequency response
(WPP1, WPP2) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
((RF+) – (RF–)) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Group delay difference 1
(A to D) *
∆Gd1
100kHz to 70MHz
—
1.0
—
ns
Group delay difference 1
(WPP1, WPP2) *
∆Gd1
100kHz to 70MHz
—
1.1
—
ns
Group delay difference 1
((RF+) – (RF–)) *
∆Gd1
100kHz to 70MHz
—
0.9
—
ns
Group delay difference 2
(A to D) *
∆Gd2
100kHz to 90MHz
—
1.0
—
ns
Group delay difference 2
(WPP1, WPP2) *
∆Gd2
100kHz to 90MHz
—
1.8
—
ns
Group delay difference 2
((RF+) – (RF–)) *
∆Gd2
100kHz to 90MHz
—
1.0
—
ns
Slew rate
(A to D) *
SR
Calculated at 10% to 90%
—
250
—
V/µs
Slew rate
(E+I to H+L) *
SR
Calculated at 10% to 90%
—
170
—
V/µs
Slew rate
(RF+, RF–) *
SR
Calculated at 10% to 90%
—
225
—
V/µs
Output noise level
(A to D) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–87
–82
dBm
Output noise level
(RF+, RF–)
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–81
–75
dBm
Note) 1. Output offset voltage: VC is the reference.
2. The output voltage represents the potential variation of the output pin between the optical emission
and the dark state.
3. Items with an asterisk (*) are design confirmation items.
4. Measurement by optical input: Measurement is made by emitting light to the center of each
photodiode.
5. The load conditions (for VC) are as follows.
A to D: 2kΩ//20pF, E+I to H+L, WPP1, WPP2: 6kΩ//20pF, RF+, RF–: (1µF + (1.3kΩ//10pF))//10pF
-8-
CXA2726GA
Electrical and Optical Characteristics 2 (Mode-2: Read Mode/High Gain)
(VCC = 5.0V, VC = 1.4V, VSW1 = 0V, VSW2 = 3.3V, Ta = 25°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
—
44.0
57.5
mA
Current consumption
ICC
In the dark
Output offset voltage
(A to D)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(E+I to H+L)
Voff
In the dark, VC reference
–35
0
35
mV
Output offset voltage
(WPP1, WPP2)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(RF+)
Voff
In the dark, VC reference
–110
0
110
mV
Output offset voltage
(RF–)
Voff
In the dark, VCC – VC reference
–110
0
110
mV
(A + B) – (C + D), In the dark
–30
0
30
mV
(A + D) – (B + C), In the dark
–30
0
30
mV
(A + C) – (B + D), In the dark
–30
0
30
mV
(G + H + K + L) – (E + F + I + J),
In the dark
–30
0
30
mV
A + B + C + D, In the dark
–50
0
50
mV
E + F + G + H + I + J + K + L,
In the dark
–50
0
50
mV
(RF+) – (RF–), In the dark
–160
0
160
mV
Output offset matrix
∆Voff
Offset temperature drift
(A to D) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(E+I to H+L) *
∆Voff/T
In the dark
–150
0
150
µV/°C
Offset temperature drift
(WPP1, WPP2) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(RF+, RF–) *
∆Voff/T
In the dark
–1
0
1
mV/°C
Output voltage
(A to D) *
Vo
λ = 650nm, 780nm, Po = 10µW
16.8
22.4
28.0
mV/µW
Output voltage
(E+I to H+L) *
Vo
λ = 650nm, 780nm, Po = 10µW
67.5
90.0
112.5 mV/µW
Output voltage
(WPP1, WPP2) *
Vo
λ = 650nm, 780nm, Po = 10µW
2.79
3.73
4.67
mV/µW
Output voltage
(RF+) *
Vo
λ = 650nm, 780nm, Po = 10µW
15.0
20.1
25.1
mV/µW
Output voltage
(RF–) *
Vo
λ = 650nm, 780nm, Po = 10µW
–25.1
–20.1
–15.0 mV/µW
Output voltage ratio
(E+I to H+L)/(A to D) *
VOR
λ = 650nm, 780nm, Po = 10µW
3.88
4.08
4.28
—
Output voltage ratio
VOR
((RF+) + (RF–))/(A to D) *
λ = 650nm, 780nm, Po = 10µW
1.79
1.88
1.97
—
Maximum output
potential
(A to D, E+I to H+L)
λ = 650nm, 780nm, Po = 1mW
3.8
4.0
—
V
Vomax
-9-
CXA2726GA
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Maximum output
potential
(WPP1, WPP2)
Vomax
λ = 650nm, 780nm, Po = 1mW
2.0
2.2
—
V
Maximum output
potential
(RF+)
Vomax
λ = 650nm, 780nm, Po = 1mW
3.8
4.0
—
V
Minimum output potential
(RF–)
Vomin
λ = 650nm, 780nm, Po = 1mW
—
1.0
1.2
V
Frequency response
(A to D) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
(E+I to H+L) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
20
30
—
MHz
Frequency response
(WPP1, WPP2) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
((RF+) – (RF–)) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Group delay difference 1
(A to D) *
∆Gd1
100kHz to 70MHz
—
1.2
—
ns
Group delay difference 1
(WPP1, WPP2) *
∆Gd1
100kHz to 70MHz
—
1.2
—
ns
Group delay difference 1
((RF+) – (RF–)) *
∆Gd1
100kHz to 70MHz
—
1.0
—
ns
Group delay difference 2
(A to D) *
∆Gd2
100kHz to 90MHz
—
1.5
—
ns
Group delay difference 2
(WPP1, WPP2) *
∆Gd2
100kHz to 90MHz
—
1.8
—
ns
Group delay difference 2
((RF+) – (RF–)) *
∆Gd2
100kHz to 90MHz
—
1.0
—
ns
Slew rate
(A to D) *
SR
Calculated at 10% to 90%
—
250
—
V/µs
Slew rate
(E+I to H+L) *
SR
Calculated at 10% to 90%
—
180
—
V/µs
Slew rate
(RF+, RF–) *
SR
Calculated at 10% to 90%
—
225
—
V/µs
Output noise level
(A to D) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–80
–75
dBm
Output noise level
(RF+, RF–)
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–74
–69
dBm
Note) 1. Output offset voltage: VC is the reference.
2. The output voltage represents the potential variation of the output pin between the optical emission
and the dark state.
3. Items with an asterisk (*) are design confirmation items.
4. Measurement by optical input: Measurement is made by emitting light to the center of each
photodiode.
5. The load conditions (for VC) are as follows.
A to D: 2kΩ//20pF, E+I to H+L, WPP1, WPP2: 6kΩ//20pF, RF+, RF–: (1µF + (1.3kΩ//10pF))//10pF
- 10 -
CXA2726GA
Electrical and Optical Characteristics 3 (Mode-3: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 1.65V, VSW2 = 1.65V, Ta = 25°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
—
39.0
51.0
mA
Current consumption
ICC
In the dark
Output offset voltage
(A to D)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(E+I to H+L)
Voff
In the dark, VC reference
–35
0
35
mV
Output offset voltage
(WPP1, WPP2)
Voff
In the dark, VC reference
–30
0
30
mV
(A + B) – (C + D), In the dark
–30
0
30
mV
(A + D) – (B + C), In the dark
–30
0
30
mV
(A + C) – (B + D), In the dark
–30
0
30
mV
(G + H + K + L) – (E + F + I + J),
In the dark
–30
0
30
mV
A + B + C + D, In the dark
–50
0
50
mV
E + F + G + H + I + J + K + L,
In the dark
–50
0
50
mV
Output offset matrix
∆Voff
Offset temperature drift
(A to D) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(E+I to H+L) *
∆Voff/T
In the dark
–150
0
150
µV/°C
Offset temperature drift
(WPP1, WPP2) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Output voltage
(A to D)
Vo
λ = 650nm, 780nm, Po = 350µW
0.98
1.30
1.63
mV/µW
Output voltage
(E+I to H+L)
Vo
λ = 650nm, 780nm, Po = 350µW
3.92
5.23
6.54
mV/µW
Output voltage
(WPP1, WPP2)
Vo
λ = 650nm, 780nm, Po = 350µW
0.65
0.87
1.09
mV/µW
Output voltage ratio
(E+I to H+L)/(A to D)
VOR
λ = 650nm, 780nm, Po = 350µW
3.89
4.09
4.29
—
Maximum output
potential
(A to D, E+I to H+L,
WPP1, WPP2)
Vomax
λ = 650nm, 780nm, Po = 1mW
3.3
3.5
—
V
Frequency response
(A to D) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
(E+I to H+L) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
25
60
—
MHz
Frequency response
(WPP1, WPP2) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
100
130
—
MHz
- 11 -
CXA2726GA
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Group delay difference 1
(A to D, WPP1, WPP2) *
∆Gd1
100kHz to 70MHz
—
1.0
—
ns
Group delay difference 2
(A to D, WPP1, WPP2) *
∆Gd2
100kHz to 90MHz
—
1.9
—
ns
Settling time
(A to D) *
Tset
Output 299mV → 15 ± 3mV
—
18.0
—
ns
Settling time
(E+I to H+L) *
Tset
Output 323mV → 6.5 ± 1.3mV
—
27.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 20mV → 399 ± 4mV
—
15.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 399mV → 20 ± 4mV
—
15.0
—
ns
Slew rate
(A to D) *
SR
Calculated at 10% to 90%
—
210
—
V/µs
Slew rate
(E+I to H+L) *
SR
Calculated at 10% to 90%
—
200
—
V/µs
Slew rate
(WPP1, WPP2) *
SR
Calculated at 10% to 90%
—
260
—
V/µs
Output noise level
(A to D) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–93
–88
dBm
Output noise level
(WPP1, WPP2) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–89
–84
dBm
Note) 1. Output offset voltage: VC is the reference.
2. The output voltage represents the potential variation of the output pin between the optical emission
and the dark state.
3. Items with an asterisk (*) are design confirmation items.
4. Measurement by optical input: Measurement is made by emitting light to the center of each
photodiode.
5. The load conditions (for VC) are as follows.
A to D: 2kΩ//20pF, E+I to H+L, WPP1, WPP2: 6kΩ//20pF
- 12 -
CXA2726GA
Electrical and Optical Characteristics 4 (Mode-4: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 1.65V, VSW2 = 3.3V, Ta = 25°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
—
39.0
51.0
mA
Current consumption
ICC
In the dark
Output offset voltage
(A to D)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(E+I to H+L)
Voff
In the dark, VC reference
–35
0
35
mV
Output offset voltage
(WPP1, WPP2)
Voff
In the dark, VC reference
–30
0
30
mV
(A + B) – (C + D), In the dark
–30
0
30
mV
(A + D) – (B + C), In the dark
–30
0
30
mV
(A + C) – (B + D), In the dark
–30
0
30
mV
(G + H + K + L) – (E + F + I + J),
In the dark
–30
0
30
mV
A + B + C + D, In the dark
–50
0
50
mV
E + F + G + H + I + J + K + L,
In the dark
–50
0
50
mV
Output offset matrix
∆Voff
Offset temperature drift
(A to D) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(E+I to H+L) *
∆Voff/T
In the dark
–150
0
150
µV/°C
Offset temperature drift
(WPP1, WPP2) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Output voltage
(A to D)
Vo
λ = 650nm, 780nm, Po = 175µW
2.73
2.91
3.41
mV/µW
Output voltage
(E+I to H+L)
Vo
λ = 650nm, 780nm, Po = 175µW
8.78
11.71
14.63
mV/µW
Output voltage
(WPP1, WPP2)
Vo
λ = 650nm, 780nm, Po = 175µW
1.46
1.95
2.44
mV/µW
Output voltage ratio
(E+I to H+L)/(A to D)
VOR
λ = 650nm, 780nm, Po = 175µW
3.78
3.98
4.18
—
Maximum output
potential
(A to D, E+I to H+L,
WPP1, WPP2)
Vomax
λ = 650nm, 780nm, Po = 1mW
3.5
3.7
—
V
Frequency response
(A to D) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
(E+I to H+L) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
30
50
—
MHz
Frequency response
(WPP1, WPP2) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
100
130
—
MHz
- 13 -
CXA2726GA
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Group delay difference 1
(A to D, WPP1, WPP2) *
∆Gd1
100kHz to 70MHz
—
1.4
—
ns
Group delay difference 2
(A to D, WPP1, WPP2) *
∆Gd2
100kHz to 90MHz
—
2.4
—
ns
Settling time
(A to D) *
Tset
Output 690mV → 34.5 ± 6.9mV
—
18.0
—
ns
Settling time
(E+I to H+L) *
Tset
Output 745mV → 14.9 ± 3mV
—
27.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 920mV → 46 ± 9.2mV
—
15.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 46mV → 920 ± 9.2mV
—
15.0
—
ns
Slew rate
(A to D) *
SR
Calculated at 10% to 90%
—
250
—
V/µs
Slew rate
(E+I to H+L) *
SR
Calculated at 10% to 90%
—
200
—
V/µs
Slew rate
(WPP1, WPP2) *
SR
Calculated at 10% to 90%
—
260
—
V/µs
Output noise level
(A to D) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–87
–82
dBm
Output noise level
(WPP1, WPP2) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–85
–80
dBm
Note) 1. Output offset voltage: VC is the reference.
2. The output voltage represents the potential variation of the output pin between the optical emission
and the dark state.
3. Items with an asterisk (*) are design confirmation items.
4. Measurement by optical input: Measurement is made by emitting light to the center of each
photodiode.
5. The load conditions (for VC) are as follows.
A to D: 2kΩ//20pF, E+I to H+L, WPP1, WPP2: 6kΩ//20pF
- 14 -
CXA2726GA
Electrical and Optical Characteristics 5 (Mode-5: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 3.3V, VSW2 = 1.65V, Ta = 25°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
—
39.0
51.0
mA
Current consumption
ICC
In the dark
Output offset voltage
(A to D)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(E+I to H+L)
Voff
In the dark, VC reference
–35
0
35
mV
Output offset voltage
(WPP1, WPP2)
Voff
In the dark, VC reference
–30
0
30
mV
(A + B) – (C + D), In the dark
–30
0
30
mV
(A + D) – (B + C), In the dark
–30
0
30
mV
(A + C) – (B + D), In the dark
–30
0
30
mV
(G + H + K + L) – (E + F + I + J),
In the dark
–30
0
30
mV
A + B + C + D, In the dark
–50
0
50
mV
E + F + G + H + I + J + K + L,
In the dark
–50
0
50
mV
Output offset matrix
∆Voff
Offset temperature drift
(A to D) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(E+I to H+L) *
∆Voff/T
In the dark
–150
0
150
µV/°C
Offset temperature drift
(WPP1, WPP2) *
∆Voff/T
In the dark
–1
0
1
mV/°C
Output voltage
(A to D)
Vo
λ = 650nm, 780nm, Po = 350µW
0.75
1.00
1.25
mV/µW
Output voltage
(E+I to H+L)
Vo
λ = 650nm, 780nm, Po = 350µW
3.01
4.02
5.03
mV/µW
Output voltage
(WPP1, WPP2)
Vo
λ = 650nm, 780nm, Po = 350µW
0.50
0.67
0.84
mV/µW
Output voltage ratio
(E+I to H+L)/(A to D)
VOR
λ = 650nm, 780nm, Po = 350µW
3.95
4.16
4.37
—
Maximum output
potential
(A to D, E+I to H+L,
WPP1, WPP2)
Vomax
λ = 650nm, 780nm, Po = 1mW
3.3
3.5
—
V
Frequency response
(A to D) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
(E+I to H+L) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
50
75
—
MHz
Frequency response
(WPP1, WPP2) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
95
150
—
MHz
- 15 -
CXA2726GA
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Group delay difference 1
(A to D, WPP1, WPP2) *
∆Gd1
100kHz to 70MHz
—
1.4
—
ns
Group delay difference 2
(A to D, WPP1, WPP2) *
∆Gd2
100kHz to 90MHz
—
2.4
—
ns
Settling time
(A to D) *
Tset
Output 230mV → 11.5 ± 2.3mV
—
15.0
—
ns
Settling time
(E+I to H+L) *
Tset
Output 248mV → 5 ± 1mV
—
24.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 306.7mV → 15.3 ± 3.1mV
—
15.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 15.3mV → 306.7 ± 3.1mV
—
15.0
—
ns
Slew rate
(A to D) *
SR
Calculated at 10% to 90%
—
210
—
V/µs
Slew rate
(E+I to H+L) *
SR
Calculated at 10% to 90%
—
200
—
V/µs
Slew rate
(WPP1, WPP2) *
SR
Calculated at 10% to 90%
—
260
—
V/µs
Output noise level
(A to D) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–93
–88
dBm
Output noise level
(WPP1, WPP2) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–89
–84
dBm
Note) 1. Output offset voltage: VC is the reference.
2. The output voltage represents the potential variation of the output pin between the optical emission
and the dark state.
3. Items with an asterisk (*) are design confirmation items.
4. Measurement by optical input: Measurement is made by emitting light to the center of each
photodiode.
5. The load conditions (for VC) are as follows.
A to D: 2kΩ//20pF, E+I to H+L, WPP1, WPP2: 6kΩ//20pF
- 16 -
CXA2726GA
Electrical and Optical Characteristics 6 (Mode-6: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 3.3V, VSW2 = 3.3V, Ta = 25°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
—
39.0
51.0
mA
Current consumption
ICC
In the dark
Output offset voltage
(A to D)
Voff
In the dark, VC reference
–30
0
30
mV
Output offset voltage
(E+I to H+L)
Voff
In the dark, VC reference
–35
0
35
mV
Output offset voltage
(WPP1, WPP2)
Voff
In the dark, VC reference
–30
0
30
mV
(A + B) – (C + D), In the dark
–30
0
30
mV
(A + D) – (B + C), In the dark
–30
0
30
mV
(A + C) – (B + D), In the dark
–30
0
30
mV
(G + H + K + L) – (E + F + I + J),
In the dark
–30
0
30
mV
A + B + C + D, In the dark
–50
0
50
mV
E + F + G + H + I + J + K + L,
In the dark
–50
0
50
mV
Output offset matrix
∆Voff
Offset temperature drift
(A to D) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Offset temperature drift
(E+I to H+L) *
∆Voff/T
In the dark
–150
0
150
µV/°C
Offset temperature drift
(WPP1, WPP2) *
∆Voff/T
In the dark
–100
0
100
µV/°C
Output voltage
(A to D)
Vo
λ = 650nm, 780nm, Po = 175µW
1.68
2.24
2.80
mV/µW
Output voltage
(E+I to H+L)
Vo
λ = 650nm, 780nm, Po = 175µW
6.75
9.01
11.26 mV/µW
Output voltage
(WPP1, WPP2)
Vo
λ = 650nm, 780nm, Po = 175µW
1.12
1.50
1.88
mV/µW
Output voltage ratio
(E+I to H+L)/(A to D)
VOR
λ = 650nm, 780nm, Po = 175µW
3.83
4.03
4.23
—
Maximum output
potential
(A to D, E+I to H+L,
WPP1, WPP2)
Vomax
λ = 650nm, 780nm, Po = 1mW
3.5
3.7
—
V
Frequency response
(A to D) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
90
120
—
MHz
Frequency response
(E+I to H+L) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
35
60
—
MHz
Frequency response
(WPP1, WPP2) *
fc
λ = 650nm, 780nm
Po = 10µWDC + 4µWp-p
100kHz reference, –3dB
95
150
—
MHz
- 17 -
CXA2726GA
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Group delay difference 1
(A to D, WPP1, WPP2) *
∆Gd1
100kHz to 70MHz
—
1.2
—
ns
Group delay difference 2
(A to D, WPP1, WPP2) *
∆Gd2
100kHz to 90MHz
—
2.3
—
ns
Settling time
(A to D) *
Tset
Output 515mV → 25.8 ± 5.2mV
—
15.0
—
ns
Settling time
(E+I to H+L) *
Tset
Output 556.6mV → 11.1 ± 2.2mV
—
24.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 687mV → 34.4 ± 6.9mV
—
15.0
—
ns
Settling time
(WPP1, WPP2) *
Tset
Output 34.4mV → 687 ± 6.9mV
—
15.0
—
ns
Slew rate
(A to D) *
SR
Calculated at 10% to 90%
—
250
—
V/µs
Slew rate
(E+I to H+L) *
SR
Calculated at 10% to 90%
—
200
—
V/µs
Slew rate
(WPP1, WPP2) *
SR
Calculated at 10% to 90%
—
260
—
V/µs
Output noise level
(A to D) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–87
–82
dBm
Output noise level
(WPP1, WPP2) *
Vn
RBW = 30kHz, f = 1 to 90MHz,
In the dark
—
–85
–80
dBm
Note) 1. Output offset voltage: VC is the reference.
2. The output voltage represents the potential variation of the output pin between the optical emission
and the dark state.
3. Items with an asterisk (*) are design confirmation items.
4. Measurement by optical input: Measurement is made by emitting light to the center of each
photodiode.
5. The load conditions (for VC) are as follows.
A to D: 2kΩ//20pF, E+I to H+L, WPP1, WPP2: 6kΩ//20pF
- 18 -
CXA2726GA
Electrical and Optical Characteristics 7 (Read to Write Mode Switching Characteristics)
(VCC = 5.0V, VC = 1.4V, Ta = 25°C)
Item
Mode switching time
(A to D, RF+, RF–)
Symbol
Tset
Conditions
λ = 650nm, 780nm, Po = 5µW
Output level ±2%
(Read mode ⇒ Write mode)
Min.
Typ.
Max.
Unit
—
180
—
ns
Min.
Typ.
Max.
Unit
—
0.7
1.0
mA
Electrical and Optical Characteristics 8 (Sleep Mode)
(VCC = 5.0V, VC = 1.4V, VSW2 = 0V, Ta = 25°C)
Item
Current consumption
Symbol
ICC
Conditions
In the dark
- 19 -
CXA2726GA
Measurement Circuit
6
A
Vcc
2
Vcc
8
Vc 10
B
Vc
13 C
GND
1
11 D
RF+ 18
7
E+I
RF– 16
4
F+J
WPP1
17 G+K
5
WPP2 14
15 H+L
SW1
9
12 NC
SW2
3
∗ The load conditions are as follows.
A to D
: 2kΩ//20pF
E+I to H+L, WPP1, WPP2 : 6kΩ//20pF
RF+, RF–
: (1µF + (1.3kΩ//10pF))//10pF
- 20 -
CXA2726GA
Photodetector Pattern Dimensions
(Unit: µm)
* Division line width: 4µm
Top View
120
K
I
J
9
D
C
A
B
100
100
170
170
120
L
9
G
E
F
120
H
120
- 21 -
CXA2726GA
Example of Representative Characteristics (Frequency Response)
Mode-1
E+I to H+L frequency response
2
0
0
–2
–2
–4
–4
Gain [dB]
Gain [dB]
A to D frequency response
2
–6
–8
–6
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
–16
1M
1G
2
0
0
–2
–2
–4
–4
–6
–8
–6
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
1G
RF+ and RF– frequency response
2
Gain [dB]
Gain [dB]
WPP1 and WPP2 frequency response
10M
100M
Frequency [Hz]
1G
- 22 -
–16
1M
10M
100M
Frequency [Hz]
1G
CXA2726GA
Mode-2
E+I to H+L frequency response
2
0
0
–2
–2
–4
–4
Gain [dB]
Gain [dB]
A to D frequency response
2
–6
–8
–6
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
–16
1M
1G
2
0
0
–2
–2
–4
–4
–6
–8
–6
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
1G
RF+ and RF– frequency response
2
Gain [dB]
Gain [dB]
WPP1 and WPP2 frequency response
10M
100M
Frequency [Hz]
1G
- 23 -
–16
1M
10M
100M
Frequency [Hz]
1G
CXA2726GA
Mode-3
E+I to H+L frequency response
2
0
0
–2
–2
–4
–4
Gain [dB]
Gain [dB]
A to D frequency response
2
–6
–8
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
1G
WPP1 and WPP2 frequency response
2
0
–2
–4
Gain [dB]
–6
–6
–8
–10
–12
–14
–16
1M
10M
100M
Frequency [Hz]
1G
- 24 -
–16
1M
10M
100M
Frequency [Hz]
1G
CXA2726GA
Mode-4
E+I to H+L frequency response
2
0
0
–2
–2
–4
–4
Gain [dB]
Gain [dB]
A to D frequency response
2
–6
–8
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
1G
WPP1 and WPP2 frequency response
2
0
–2
–4
Gain [dB]
–6
–6
–8
–10
–12
–14
–16
1M
10M
100M
Frequency [Hz]
1G
- 25 -
–16
1M
10M
100M
Frequency [Hz]
1G
CXA2726GA
Mode-5
E+I to H+L frequency response
2
0
0
–2
–2
–4
–4
Gain [dB]
Gain [dB]
A to D frequency response
2
–6
–8
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
1G
WPP1 and WPP2 frequency response
4
2
0
–2
Gain [dB]
–6
–4
–6
–8
–10
–12
–14
1M
10M
100M
Frequency [Hz]
1G
- 26 -
–16
1M
10M
100M
Frequency [Hz]
1G
CXA2726GA
Mode-6
E+I to H+L frequency response
2
0
0
–2
–2
–4
–4
Gain [dB]
Gain [dB]
A to D frequency response
2
–6
–8
–8
–10
–10
–12
–12
–14
–14
–16
1M
10M
100M
Frequency [Hz]
1G
WPP1 and WPP2 frequency response
4
2
0
–2
Gain [dB]
–6
–4
–6
–8
–10
–12
–14
1M
10M
100M
Frequency [Hz]
1G
- 27 -
–16
1M
10M
100M
Frequency [Hz]
1G
CXA2726GA
Example of Representative Characteristics (Settling Characteristics)
Mode-3
A to D settling characteristics
0.35
0.30
Output voltage [V]
0.25
0.20
0.15
0.10
0.05
0.00
–0.05
–5
0
5
10
15
20
25
30
35
40
45
40
45
40
45
Time [ns]
E+I to H+L settling characteristics
0.40
0.35
Output voltage [V]
0.30
0.25
0.20
0.15
0.10
0.05
0.00
–0.05
–5
0
5
10
15
20
25
30
35
Time [ns]
WPP1 and WPP2 settling characteristics
0.50
Output voltage [V]
0.40
0.30
0.20
0.10
0.00
–0.10
–5
0
5
10
15
20
Time [ns]
- 28 -
25
30
35
CXA2726GA
Mode-4
A to D settling characteristics
0.8
0.7
Output voltage [V]
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–0.1
–5
0
5
10
15
20
25
30
35
40
45
40
45
40
45
Time [ns]
E+I to H+L settling characteristics
0.90
0.80
Output voltage [V]
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
–0.10
–5
0
5
10
15
20
25
30
35
Time [ns]
WPP1 and WPP2 settling characteristics
1.20
Output voltage [V]
1.00
0.80
0.60
0.40
0.20
0.00
–0.20
–5
0
5
10
15
20
Time [ns]
- 29 -
25
30
35
CXA2726GA
Mode-5
A to D settling characteristics
0.30
Output voltage [V]
0.25
0.20
0.15
0.10
0.05
0.00
–0.05
–5
0
5
10
15
20
25
30
35
40
45
40
45
40
45
Time [ns]
E+I to H+L settling characteristics
0.30
0.25
Output voltage [V]
0.20
0.15
0.10
0.05
0.00
–0.05
–5
0
5
10
15
20
25
30
35
Time [ns]
WPP1 and WPP2 settling characteristics
0.35
0.30
Output voltage [V]
0.25
0.20
0.15
0.10
0.05
0.00
–0.05
–0.10
–5
0
5
10
15
20
Time [ns]
- 30 -
25
30
35
CXA2726GA
Mode-6
A to D settling characteristics
0.6
Output voltage [V]
0.5
0.4
0.3
0.2
0.1
0.0
–0.1
–5
0
5
10
15
20
25
30
35
40
45
40
45
Time [ns]
E+I to H+L settling characteristics
0.70
0.60
Output voltage [V]
0.50
0.40
0.30
0.20
0.10
0.00
–0.10
–5
0
5
10
15
20
25
30
35
Time [ns]
WPP1 and WPP2 settling characteristics
0.80
0.70
Output voltage [V]
0.60
0.50
0.40
0.30
0.20
0.10
0.00
–0.10
–0.20
–5
0
5
10
15
20
Time [ns]
- 31 -
25
30
35
40
45
CXA2726GA
Notes on Operation
1. Power supply
The CXA2726GA can be used with a single power supply or a dual power supply. However, this IC is not
provided with a center voltage generating circuit, and so when used with a single power supply the center
voltage must be supplied from the RF amplifier or other device.
The power supply connections for each case are shown in the table below.
VCC (Pin 2)
VC (Pin 10)
GND (Pin 1)
Dual power supply
Positive power supply
GND
Negative power supply
Single power supply
Positive power supply
Center voltage
GND
The potential difference between the VCC pin and the GND pin should be in the range of 4.5 to 5.5V for both a
single power supply and a dual power supply.
2. Mechanical strength of package
The mechanical strength of the package is not guaranteed for the CXA2726GA.
Do not employ a mounting method which applies a heavy load to the package.
3. Visual inspection standard
The visual inspection standards over the photodetector are as follows.
(1) Foreign object limit
A to L: Equivalent area φ10µm or less
(2) Inspection method
Using a metallurgical microscope (×50, coaxial illumination, bright field image), focus on the
photodetector and measure the sharp shadow size.
(3) Inspection range
Entire photodetector area (entire area of A to L on page 21).
4. Bypass capacitors
Connect 0.1µF capacitors “between the VCC and VC pins and between the VC and GND pins” or “between the
VCC and GND pins and between the VC and GND pins” to lower the power supply line impedance.
Use a flexible printed circuit (FPC) pattern or take other measures so that the bypass capacitors can be located
near the PDIC.
5. Electrostatic strength
The CXA2726GA has a electrostatic strength of 300V*1, and should be used in an environment where
countermeasures against electrostatic discharge have been implemented.
*1
Testing method: EIAJ ED-4701-1 C-111A Testing method A
6. Soldering
Reflow soldering: Finish reflow soldering under the recommended conditions described on the next page.
Also, take care not to apply stress to the package during preheating and in the heated condition including
immediately after soldering because the resin is softened in these cases.
- 32 -
CXA2726GA
Reflow Soldering Recommended Conditions 1
1. Perform infrared or hot air reflow, or use an oven that combines these methods.
2. Finish reflow soldering within the following range after unsealing the moisture-proof packing.
30°C/70%RH/8h → Reflow → 30°C/70%RH/8h → Reflow
Note) Perform reflow soldering a maximum of two times.
When reflow soldering cannot be performed within these specifications, baking should first be performed
under either of the following conditions.
[Baking conditions]
Š 125°C, 10 to 48h
Š Baking can be performed in the taped condition.
Š Baking should be performed only one time.
3. Reflow conditions: Perform reflow soldering within the range shown in the figure below.
250
Peak: 250˚C max.
230˚C or more
2 to 6˚C/s
Temperature [˚C]
200
Pre-heating zone
(3 to 6˚C/s)
180˚C
150
150˚C
90 ± 30 s
2 to 4˚C/s
100
30 ± 10 s
Soldering zone
50
Heating time
Be sure to consult your Sony representative when performing reflow soldering outside of the ranges described
above.
- 33 -
CXA2726GA
Reflow Soldering Recommended Conditions 2
1. Perform infrared or hot air reflow, or use an oven that combines these methods.
2. Finish reflow soldering within the following range after unsealing the moisture-proof packing.
30°C/80%RH/12h → Reflow
Note) Perform reflow soldering only one time.
When reflow soldering cannot be performed within these specifications, baking should first be performed
under either of the following conditions.
[Baking conditions]
Š 125°C, 10 to 48h
Š Baking can be performed in the taped condition.
Š Baking should be performed only one time.
3. Reflow conditions: Perform reflow soldering within the range shown in the figure below.
250
Peak: 240˚C max.
230˚C or more
2 to 6˚C/s
Temperature [˚C]
200
Pre-heating zone
(3 to 6˚C/s)
180˚C
150
150˚C
90 ± 30 s
2 to 4˚C/s
100
30 ± 10 s
Soldering zone
50
Heating time
Be sure to consult your Sony representative when performing reflow soldering outside of the ranges described
above.
- 34 -
CXA2726GA
Pin 1 Indication Explanation Figure
Surface
L K
I J
D C
A B
H G
E F
Top View
Pin 1 indication
Back (Resist window diagram)
Top View
- 35 -
CXA2726GA
Photodetector Position
(Unit: mm)
Surface
Y
L
K
I
J
D C
A B
X
H G
E F
Photodetector: center of package
0.38 ± 0.2
Back
0.35 ± 0.2
Top View
Resin uppermost Surface that senses
surface
the incident light
‹ The resin thickness (mechanical dimension) over the photodetector is 0.35 ± 0.2mm.
The resin refractive index is as follows.
650nm: n = 1.55, 780nm: n = 1.54
‹ The photodetector center position accuracy is as follows.
X, Y: 0 ± 0.16mm, angular θ: 0 ± 2° (with the X axis as θ = 0°)
- 36 -
CXA2726GA
Package Outline
(Unit: mm)
18PIN LFLGA
1.25 ± 0.1
4.5 ± 0.1
S
3.2 ± 0.1
0.1
S
0.5
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
0.8
0.8
0.8
18
0.8
0.8
0.8
1
0.8
PIN 1 INDEX
18-φ0.45 ± 0.03
PACKAGE MATERIAL
GLASS EPOXY
TERMINAL TREATMENT
NICKEL & GOLD PLATING
JEITA CODE
TERMINAL MATERIAL
COPPER
JEDEC CODE
PACKAGE MASS
0.03g
SONY CODE
LFLGA-18P-391
- 37 -
Sony Corporation