Data Sheet Switching Diode DAP202UM Applications High speed switching Dimensions (Unit : mm) Land size figure (Unit : mm) 0.9±0.1 2.0±0.1 各リードとも 同寸法 +0.1 0.32 -0.05 Each lead has same dimensions Construction Silicon epitaxial planer 0～0.1 (1) 0.53±0.1 0.425 2.1±0.1 1.25±0.1 0.53±0.1 (3) 0.425 Features 1)Small mold, flat lead type. (UMD3F) 2)High reliability (2) 0.65 0.65 Structure 0.13±0.05 1.3±0.1 ROHM : UMD3F dot (year week factory) 2.4±0.08 0～0.5 4.0±0.1 φ0.5±0.05 1.15±0.1 2.2±0.08 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Rated in slash put frequency f Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage 0.3±0.1 8.0±0.2 4.0±0.1 3.5±0.05 2.0±0.05 5.5±0.2 φ1.55±0.05 1.75±0.1 Taping dimensions (Unit : mm) Limits 80 80 300 100 4 200 150 - 55 to +150 100 Unit V V mA mA A mW/Total °C °C MHz Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current Capacitance between terminals IR - - 0.1 μA VR=70V Ct - - 3.5 pF Reverse recovery time trr - - 4.0 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.09 - Rev.A Data Sheet DAP202UM 100000 100 Ta=150°C Ta=125°C 10000 Ta=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 10 Ta=75°C 1 Ta=125°C 0.1 Ta=25°C 0.01 1000 Ta=75°C 100 Ta=25°C 10 1 0.1 0.001 0 0 100 200 300 400 500 600 700 800 900 1000 10 20 30 40 50 10 70 80 910 f=1MHz Ta=25°C IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) 900 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 890 880 AVE:884mV 870 860 850 0.1 0 5 10 15 20 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 50 Ta=25°C VR=70V n=30pcs 30 20 AVE:11nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 40 Ta=25°C VR=0V f=1MHz n=10pcs 9 10 8 7 6 AVE:5.03pF 5 4 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.09 - Rev.A 50 20 IF=IR=100mA Irr=0.1*IR REVERSE RECOVERY TIME:trr(ns) 1cyc IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet DAP202UM 15 8.3ms 10 AVE:2.50A 5 40 30 20 AVE:19.3ns 10 0 0 trr DISPERSION MAP IFSM DISPERSION MAP 5 100 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 4 8.3ms 1cyc 3 2 IFSM t 10 1 1 0 1 10 0.1 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 Rth(j-a) ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 9 Rth(j-c) 100 Mounted on epoxy board IF=10A IM=100mA 8 7 6 5 4 AVE:2.98kV 3 AVE:1.47kV 2 1ms time 1 300us 10 0.001 0 0.01 0.1 1 10 100 C=100pF R=1.5kΩ 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω 3/3 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A