Data Sheet Switching Diode DAP222 Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.7 1.6±0.2 0.3±0.1 0.05 Features 1) Ultra small mold type. (EMD3) 2) High reliability. 0.15±0.05 0.7 0.7 0.1Min 0.6 0.6 EMD3 0.55±0.1 0.5 0.5 1.0±0.1 Construction Silicon epitaxial planar 0～0.1 (1) (2) 0.2±0.1 -0.05 1.6±0.2 0.8±0.1 (3) 1.3 Applications Ultra high speed switching 0.7±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.1 φ1.5 0.1 00 2.0±0.05 0.3±0.1 8.0±0.2 0～0.1 1.8±0.2 1.8±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ0.5±0.1 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (single) Average rectified forward voltage (single) Io Isurge Surge current （t=1us） Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Limits Unit 80 80 300 100 4 150 150 55 to 150 V V mA mA A mW °C °C Typ. Max. - - 1.2 V Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Ct - - 3.5 pF Reverse recovery time trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 Unit Conditions Symbol VF Min. Forward voltage IF=100mA 2011.06 - Rev.B Data Sheet DAP222 10000 Ta=75℃ Ta=150℃ Ta=25℃ 1 Ta=75℃ 100 10 Ta=25℃ 1 Ta=25℃ 0.1 0.1 0 100 200 300 400 500 600 700 800 900 1000 10 20 30 40 50 60 70 80 0 REVERSE VOLTAGE : V R(V) V R-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(nA) 880 870 860 AVE:870.1mV 850 80 60 50 40 30 AVE:4.310nA 20 6 5 AVE:1.98pF 4 3 2 1 0 0 Ct DISPERSION MAP 5 10 AVE:2.50A 0 9 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 8 7 6 PEAK SURGE FORWARD CURRENT : I FSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc 8.3ms 5 7 10 10 Ifsm 5 4 3 2 1 Ifsm 4 8.3ms 3 2 1 0 1 IFSM DISRESION MAP trr DISPERSION MAP 1000 10 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 10 Rth(j-a) 9 Rth(j-c) Mounted on epoxy board 100 IM=100mA 1ms IF=10A time 300us 0.001 8 7 6 5 4 3 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:2.98kV AVE:1.47kV 2 1 10 0.1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS ELECTROSTATIC DDISCHARGE TEST ESD(KV) t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 8.3ms 1cyc AVE:1.93ns 0 100 20 Ta=25℃ VR=6V f=1MHz n=10pcs 8 IR DISPERSION MAP 15 15 9 70 VF DISPERSION MAP 20 10 10 Ta=25℃ VR=70V n=10pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs 5 REVERSE VOLTAGE : VR(V) V R-Ct CHARACTERISTICS 100 900 890 1 0.01 0.001 0 FORWARD VOLTAGE : V F(mV) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ 0.1 PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=125℃ f=1MHz Ta=125℃ 10 Ta=150℃ 1000 REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) 100 C=200pF R=0Ω C=100pF R=1.5kΩ 1000 ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A