DG200A_MIL Vishay Siliconix Monolithic Dual SPST CMOS Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D Wide Dynamic Range D Simple Interfacing D Reduced External Component Count D D D D "15 V Input Signal Range 44-V Maximum Supply Ranges On-Resistance: 45 W TTL and CMOS Compatibility Servo Control Switching Programmable Gain Amplifiers Audio Switching Programmable Filters DESCRIPTION The DG200A_MIL is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally suited for designs requiring a wide analog voltage range coupled with low on-resistance. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. In the on condition, this bi-directional switch introduces no offset voltage of its own. The DG200A_MIL is designed on Vishay Siliconix’ improved PLUS-40 CMOS process. An epitaxial layer prevents latchup. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line Metal Can IN2 IN1 1 14 NC 2 13 NC V+ (Substrate and Case) IN1 GND 3 12 V+ Substrate NC 4 11 NC S2 5 10 S1 D2 6 9 D1 V– 8 7 1 IN2 GND S1 9 2 8 7 3 4 NC 10 S2 D1 NC 6 5 V– D2 Top View Top View TRUTH TABLE Logic Switch 0 ON 1 OFF Logic “0” v 0.8 V Logic “1” w 2.4 V Document Number: 70035 S-02314—Rev. E, 05-Oct-00 www.vishay.com 4-1 DG200A_MIL Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG200AAK 14-Pin CerDIP –55 to 125_C DG200AAK/883, JM38510/12301BCA, 5962-9562901QCA DG200AAA 10-Pin Metal Can 14-Pin Sidebraze DG200AAA/883, JM38510/12301BIC JM38510/12301BCC ABSOLUTE MAXIMUM RATINGS V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current S or D (Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Power Dissipation (Package)b 10-Pin Metal Canc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 14-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 11 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S V– – + V+ GND INX D V– FIGURE 1. www.vishay.com 4-2 Document Number: 70035 S-02314—Rev. E, 05-Oct-00 DG200A_MIL Vishay Siliconix SPECIFICATIONSa Limits Test Conditions Unless Otherwise Specified Parameter Symbol V+ = 15 V, V– = –15 V VIN = 2.4 V, 0.8 Vf –55 to 125_C Tempb Minc Full –15 Typd Maxc Unit 15 V 45 70 100 W Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) VD = "10 V, IS = –1 mA Room Full Source Off Leakage Current IS(off) VS = "14 V, VD = #14 V Room Full –2 –100 "0.01 2 100 Drain Off Leakage Current ID(off) VD = "14 V, VS = #14 V Room Full –2 –100 "0.01 2 100 Channel On Leakage Currentf ID(on) VS = VD = "14 V Room Full –2 –200 "0.1 2 200 VIN = 2.4 V Room Full –0.5 –1 0.0009 VIN = 15 V Room Full VIN = 0 V Room Full nA Digital Control Input Current with Input Voltage High IINH Input Current with Input Voltage Low IINL 0.005 –0.5 –1 0.5 1 mA –0.0015 Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel-On Capacitance Off Isolation Crosstalk (Channel-to-Channel) tON tOFF Q CS(off) CD(off) CD(on) + CS(On) Room 440 1000 Room 340 425 Room –10 VS = 0 V Room 9 VD = 0 V Room 9 Room 25 Room 75 Room 90 Room 0.8 See Switching Time Test Circuit CL = 1000 pF, Vg = 0 V Rg = 0 W f = 140 kHz VIN = 5 V VD = VS = 0 V, VIN = 0 V OIRR XTALK VIN = 5 V, RL = 75 W VS = 2 V, f = 1 MHz ns pC pF dB Power Supplies Positive Supply Current I+ Negative Supply Current I– Both Channels On or Off VIN = 0 V and 2.4 V 2 mA Room –1 –0.23 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70035 S-02314—Rev. E, 05-Oct-00 www.vishay.com 4-3 DG200A_MIL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply Voltage Leakage Currents vs. Analog Voltage +6 TA = 25_C ID(off) or IS(off) 0 A I S, I D (pA) 100 r DS(on) ( W ) "5 V "10 V "12 V "15 V "20 V A: B: C: D: E: 120 80 B 60 ID(on) –6 –12 C D 40 –18 E –24 20 –15 –12 –9 –6 –3 0 3 6 9 12 –15 –12 15 VD – Drain Voltage (V) V T (V) 1.5 1.0 0.5 0 0 "5 "10 "15 V+, V– Positive and Negative Supplies (V) www.vishay.com 4-4 –3 0 3 6 9 12 15 "20 Supply Currents vs. Toggle Frequency V+ = 15 V V– = –15 V Both logic inputs toggled simutaneously 6 5 I+, I– (mA) ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ 2.0 –6 VANALOG – Analog Voltage (V) Input Switching Threshold vs. V+ and V– Supply Voltages 2.5 –9 4 3 2 I+ 1 I– 0 1k 10 k 100 k 1M Toggle Frequency (Hz) Document Number: 70035 S-02314—Rev. E, 05-Oct-00 DG200A_MIL Vishay Siliconix TEST CIRCUITS VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. +15 V Logic Input Switch Input 3V V+ tr <20 ns tf <20 ns 50% 0V VS = +5 V tOFF VO IN VS V– GND CL 35 pF RL 1 kW 3V 90% Switch Output D S VO tON –15 V RL VO = VS RL + rDS(on) FIGURE 2. Switching Time +15 V DVO VO V+ Rg S D VO CL 1000 pF IN Vg 3V ON INX OFF ON V– GND DVO = measured voltage error due to charge injection The charge injection in coulombs is DQ = CL x DVO –15 V FIGURE 3. Charge Injection +15 V C +15 V V+ C V+ S VS S1 VS VO D Rg = 50 W D1 50 W IN1 0V Rg = 50 W 5V RL IN GND V– C NC 0V S2 VO D2 RL IN2 GND V– C –15 V –15 V Off Isolation = 20 log VS VO XTALK = 20 log VS VO C = RF bypass FIGURE 4. Off Isolation Document Number: 70035 S-02314—Rev. E, 05-Oct-00 FIGURE 5. Channel-to-Channel Crosstalk www.vishay.com 4-5