DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Preliminary Information Replaces September 2001, version DS5495-1.2 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5495-1.2 September 2001 KEY PARAMETERS VCES VCE(sat) (typ) (max) IC IC(PK) (max) APPLICATIONS ■ External connection High Reliability Inverters E1 E1 ■ Motor Controllers ■ Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM400GDM33-A000 is a dual switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM400GDM33-A000 Note: When ordering, please use the whole part number. 3300V 3.2V 400A 800A C2 C2 G1 G2 C1 E2 E2 C1 Fig. 1 Dual switch circuit diagram C1 E1 C1 E1 E2 C2 G1 C2 G2 E2 E2 - Aux Emitter C1 - Aux Collector Outline type code: G (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM400GDM33-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 80˚C 400 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 4.8 kW Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 80 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS 10 pC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GDM33-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 26 ˚C/kW - - 52 ˚C/kW - - 6 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM400GDM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 2 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 30 mA Gate leakage current VGE = ±20V, VCE = 0V - - 4 µA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 400A - 3.2 - V VGE = 15V, IC = 400A, , Tcase = 125˚C - 4.0 - V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 400 - A IFM Diode maximum forward current tp = 1ms - 800 - A VF Diode forward voltage IF = 400A - 2.5 - V IF = 400A, Tcase = 125˚C - 2.5 - V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 90 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 5 - nF LM Module inductance - per arm - - 25 - nH Internal transistor resistance - per arm - - 0.26 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 2500V, I1 - 2600 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 2200 - A IEC 60747-9 Note: L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GDM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 400A - 1450 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 1800V - 500 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 500 - ns Rise time Cge = 68nF - 300 - ns EON Turn-on energy loss L ~ 100nH - 650 - mJ Qg Gate charge - 12 - µC Qrr Diode reverse recovery charge IF = 400A, VR = 1800V, - 280 - µC Irr Diode reverse recovery current dIF/dt = 2800A/µs - 400 - A Erec Diode reverse recovery energy - 300 - mJ Min. Typ. Max. Units IC = 400A - 1700 - ns Fall time VGE = ±15V - 250 - ns EOFF Turn-off energy loss VCE = 1800V - 600 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 550 - ns Rise time Cge = 68nF - 300 - ns EON Turn-on energy loss L ~ 100nH - 850 - mJ Qrr Diode reverse recovery charge IF = 400A, VR = 1800V, - 450 - µC Irr Diode reverse recovery current dIF/dt = 2000A/µs - 430 - A Erec Diode reverse recovery energy - 550 - mJ Parameter Symbol td(off) tf tr Turn-off delay time Test Conditions Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM400GDM33-A000 TYPICAL CHARACTERISTICS 800 800 Common emitter. Tcase = 125˚C 700 700 600 600 Collector current, IC - (A) Collector current, IC - (A) Common emitter. Tcase = 25˚C 500 400 300 400 300 200 200 VGE = 20V VGE = 15V VGE = 12V VGE = 10V 100 0 0 500 1 2 3 4 Collector-emitter voltage, Vce - (V) 0 1 6 5 Fig. 3 Typical output characteristics 2 3 4 5 6 Collector-emitter voltage, Vce - (V) 7 8 Fig. 4 Typical output characteristics 900 1400 Conditions: Tcase = 125˚C 800 Rg = 4.7 Ohms Vcc = 1800V Cge = 68nF 700 Conditions: Tcase = 125˚C IC = 400A 1200 Vcc = 1800V Cge = 68nF Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) VGE = 20V VGE = 15V VGE = 12V VGE = 10V 100 600 500 400 300 1000 800 600 400 200 Eon Eoff Erec 100 0 0 100 200 300 400 500 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 6/10 200 0 3 Eon Eoff Erec 4 5 6 7 8 9 10 Gate resistance, Rg - (Ohms) 11 12 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GDM33-A000 800 900 Tj = 25˚C Tj = 125˚C 800 700 Collector current, IC (A) Forward current, IF - (A) Chip 700 600 500 400 300 600 Module 500 400 300 200 200 100 Tcase = 125˚C Vge = ±15V Rg(min) = 4.7Ω 0 0 500 1000 1500 2000 2500 3000 Collector emitter voltage, Vce - (V) 100 0 0 0.5 1 1.5 2 2.5 3 Forward voltage, VF - (V) 3.5 4 Fig. 7 Diode typical forward characteristics 3500 Fig. 8 Reverse bias safe operating area 1000 700 tp 600 = 0µ s s m Collector current, IC - (A) 1 Reverse recovery current, Irr - (A) 10 = 400 10 300 µs = 50 tp tp 100 500 Ic(max) DC 200 1 100 0 0 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 3500 0 1 Tvj = 125˚C, Tc = 80˚C 10 100 1000 Collector emitter voltage, Vce - (V) Fig. 10 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 10000 7/10 DIM400GDM33-A000 700 100 600 Transistor DC collector current, IC - (A) Transient thermal impedance, Zth (j-c) - (°C/kW ) Diode 10 500 400 300 1 200 IGBT Diode 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.7494 0.0876 1.4772 0.0843 2 3.9034 3.7713 7.823 3.7205 0.1 Pulse width, tp - (s) 3 5.5554 33.5693 11.1256 33.2138 1 Fig. 11 Transient thermal impedance 8/10 4 16.8032 236.8023 33.6616 236.5275 10 100 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig. 12 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GDM33-A000 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. E2 - Aux Emitter C1 - Aux Collector C1 E1 C1 E1 E2 C2 G1 130 C2 G2 E2 38 140 160 Nominal weight: 1000g Module outline type code: G Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 DIM400GDM33-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5495-2 Issue No. 2.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com