Product specification DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) ID TA = +25°C Low On-Resistance Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A Low Input Capacitance 190m @ VGS = -4.5V -2.0A Fast Switching Speed V(BR)DSS -30V Features Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data performance, making it ideal for high efficiency power management applications. Case: SOT23 Applications Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Body Diode Gate S G Source Top View Top View Equivalent Circuit Ordering Information (Note 4 & 5) Part Number DMP3160L-7 DMP3160LQ-7 Notes: Compliance Standard Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information PS3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2007 U Jan 1 http://www.twtysemi.com 2008 V Feb 2 2009 W Mar 3 Apr 4 2010 X May 5 [email protected] 2011 Y Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D 1 of 2 Product specification DMP3160L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V ID -2.7 -2 A IDM -8 A Symbol Value Units PD 1.08 W RθJA 115 °C/W TJ, TSTG -55 to +150 °C Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C Pulsed Drain Current (Note 7) Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Drain-Source Breakdown Voltage BVDSS -30 V Zero Gate Voltage Drain Current IDSS -800 nA VDS = -30V, VGS = 0V nA VGS = 12V, VDS = 0V VGS = 15V, VDS = 0V V Gate-Source Leakage Typ Max IGSS 80 800 VGS(th) -1.3 -1.8 -2.1 Unit Test Condition VGS = 0V, ID = -250µA ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VDS = VGS, ID = -250µA VGS = -10V, ID = -2.7A RDS(ON) 97 165 122 190 mΩ Forward Transfer Admittance |Yfs| 5.9 S VDS = -5V, ID = -2.7A Diode Forward Voltage (Note 8) VSD -1.26 V VGS = 0V, IS = -2.7A Input Capacitance Ciss 384.4 pF Output Capacitance Coss 59.4 pF Reverse Transfer Capacitance Crss 52.8 pF Gate Resistance RG 17.1 Ω Total Gate Charge(VGS = -4.5V) Qg 4.0 nC Total Gate Charge(VGS = -10V) Qg 8.2 nC Qgs 0.9 nC Static Drain-Source On-Resistance VGS = -4.5V, ID = -2.0A DYNAMIC CHARACTERISTICS(Note 9) Gate-Source Charge Gate-Drain Charge Qgd 1.2 nC Turn-On Delay Time tD(on) 4.8 ns Turn-On Rise Time tr 7.3 ns Turn-Off Delay Time tD(off) 22.5 ns tf 13.4 ns Turn-Off Fall Time Notes: VDS = -10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz VGS = -10V/-4.5V, VDS = -15V, ID = -3A VDS = -15V, VGS = -10V, RG = 6, ID = -1A 3. Device mounted on FR-4 PCB. t ≤10 sec. 4. Pulse width ≤10S, Duty Cycle ≤1%. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. http://www.twtysemi.com [email protected] 2 of 2