DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-220 TO-243AA* 350V 25Ω 150mA DN2535N3 DN2535N5 — 400V 25Ω 150mA DN2540N3 DN2540N5 DN2540N8 * Same as SOT-89. Product shipped on 2000 piece carrier tape reels. Product marking for TO-243AA: Features DN5D❋ ❏ High input impedance Where ❋ = 2-week alpha date code ❏ Low input capacitance ❏ Fast switching speeds Advanced DMOS Technology ❏ Low on resistance Not recommended for new designs. For products in TO-92 (N3) package and TO-243AA (N8) package, please use DN3535 or DN3545 instead. ❏ Free from secondary breakdown ❏ Low input and output leakage These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Applications ❏ Normally-on switches ❏ Solid state relays ❏ Converters Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Linear amplifiers ❏ Constant current sources ❏ Power supply circuits ❏ Telecom Package Options Absolute Maximum Ratings Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 300°C D G D S TO-243AA (SOT-89) G D S SGD TO-92 TO-220 TAB: DRAIN Note: See Package Outline section for dimensions. 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, DN2535/DN2540 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C TO-92 120mA 500mA 1.0W TO-220 500mA 500mA 15.0W TO-243AA 170mA 500mA 1.6W (TA = 25°)† IDR* IDRM θjc °C/W θja °C/W 125 170 120mA 500mA 8.3 70 500mA 500mA 15 78† 170mA 500mA * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. TA = 25°C Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Drain-to-Source Breakdown Voltage BVDSX DN2540 400 DN2535 350 Typ Max Unit Conditions V VGS = -5V, ID = 100µA –3.5 V VDS = 25V, ID= 10µA VDS = 25V, ID= 10µA VGS(OFF) Gate-to-Source OFF Voltage ∆VGS(OFF) Change in VGS(OFF) with Temperature 4.5 mV/°C IGSS Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 10 µA VGS = -10V, VDS = Max Rating 1 mA VGS = -10V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 0V, VDS = 25V 25 Ω VGS = 0V, ID = 120mA 1.1 %/°C VGS = 0V, ID = 120mA –1.5 IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source ON-State Resistance ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance 325 CISS Input Capacitance 200 300 COSS Common Source Output Capacitance 12 30 CRSS Reverse Transfer Capacitance 1 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 150 Ω 17 m 800 ID = 100mA, VDS = 10V VGS = -10V, VDS = 25V pF f = 1 MHz VDD = 25V, ns ID = 150mA, RGEN = 25Ω V VGS = -10V, ISD = 120mA ns VGS = -10V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) VDD 10% td(OFF) tF 90% OUTPUT D.U.T. INPUT 10% OUTPUT 0V RL Rgen t(OFF) tr VDD 90% 2 DN2535/DN2540 Typical Performance Curves Output Characteristics Saturation Characteristics 0.5 250 VGS = 1.0V 0.5V VGS = 1.0V 0.5V 0V 200 ID (milliamps) ID (amperes) 0.4 0V 0.3 0.2 -0.5V 0.1 150 -0.5V 100 50 -1.0V -1.0V 0 0 0 160 80 320 240 400 0 1 2 VDS (volts) Transconductance vs. Drain Current 4 5 Power Dissipation vs. Temperature 0.5 20 VDS = 10V 0.4 TO-220 TA = -55°C 0.3 TA = 25°C PD (watts) GFS (siemens) 3 VDS (volts) TA = 125°C 0.2 10 0.1 TO-243AA (TA = 25°C) TO-92 0 0 0 50 100 150 200 250 0 50 25 ID (milliamps) Maximum Rated Safe Operating Area 100 125 150 Thermal Response Characteristics 1.0 1 Thermal Resistance (normalized) TO-92/TO-220 (pulsed) TO-220 (DC) (TA = 25°C) SOT-89 (DC) ID (amperes) 75 TC (°C) 0.1 TO-92 (DC) 0.01 TC = 25°C 0.001 1 TO-243AA TA = 25°C PD = 1.6W 0.8 0.6 0.4 0.2 TO-220 TC = 25°C PD = 15W TO-92 TC = 25°C PD = 1.0W 0 10 100 1000 0.001 VDS (volts) 0.01 0.1 tp (seconds) 3 1 10 DN2535/DN2540 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 100 VGS = -5V VGS = 0V 80 RDS(on) (Ohms) BVDSS Normalized 1.05 1.0 0.95 0.9 60 40 20 0 -50 150 100 50 0 0 80 160 Tj (°C) 240 320 400 ID (milliamps) Transfer Characteristics VGS(off) and RDS Variation with Temperature 0.40 2.5 TA = -55°C VDS = 10V 0.32 2 0.24 RDS (ON) @ ID = 120mA Normalized ID (amperes) TA = 25°C TA = 125°C 0.16 1.5 1 VGS(OFF) @ 10µA 0.08 0.5 0 0 -3 1 0 -1 2 2 -50 0 50 100 150 Tj (°C) VGS (Volts) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 200 15 CISS 10 VGS (Volts) C (Picofarads) 150 100 VGS = -10V 200pF 5 VDS = 20V 0 VDS = 40V 50 -5 COSS CRSS 170pF 0 0 10 20 30 40 0 VDS (Volts) 0.4 0.8 1.2 1.6 2.0 QC (Nanocoulombs) 12/13/010 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com