DS502ST DS502ST Rectifier Diode Replaces January 2000 version, DS4794-3.0 DS4794-4.0 October 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VRRM 1400V ■ High Surge Capability IF(AV) 866A IFSM APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers 8000A VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DS502ST14 1400 DS502ST13 1300 DS502ST12 1200 DS502ST11 1100 DS502ST10 1000 DS502ST09 900 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: T See Package Details for further information. Fig. 1 Package outline CURRENT RATINGS ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS502ST14 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS502ST CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 866 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 1360 A Continuous (direct) forward current - 1236 A 556 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 873 A Continuous (direct) forward current - 721 A Conditions Max. Units 540 A IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 848 A Continuous (direct) forward current - 783 A 350 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 550 A Continuous (direct) forward current - 465 A IF Half wave resistive load 2/7 www.dynexsemi.com DS502ST SURGE RATINGS Parameter Symbol IFSM I2t IFSM I2t Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current Conditions Max. Units 10ms half sine; Tcase = 175oC 6.5 kA VR = 50% VRRM - 1/4 sine 211 x 103 A2s 10ms half sine; Tcase = 175oC 8.0 kA VR = 0 320 x 103 A2s I2t for fusing THERMAL AND MECHANICAL DATA Conditions Min. Max. Units dc - 0.07 o Anode dc - 0.14 o Cathode dc - 0.14 o C/W Double side - 0.02 o C/W Single side - 0.04 o C/W Forward (conducting) - 185 o Reverse (blocking) - 175 o Storage temperature range –55 200 o Clamping force 3.5 5.0 kN Min. Max. Units Parameter Symbol Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 4.5kN with mounting compound C Virtual junction temperature C C CHARACTERISTICS Symbol Parameter Conditions IRM Peak reverse current At VRRM, Tcase = 175oC - 30 mA VTO Threshold voltage At Tvj = 175˚C - 0.84 V Slope resistance At Tvj = 175˚C - 0.667 mΩ rT 3/7 www.dynexsemi.com DS502ST CURVES 800 3000 dc 1/2 wave 3 phase 6 phase 700 Mean power dissipation - (W) Instantaneous forward current, IF - (A) 2500 2000 1500 Tj = 175ºC 1000 Tj = 25ºC 500 600 500 400 300 200 100 0 0.7 0 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Instantaneous forward voltage, VF - (V) 0 1.6 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF 100 200 300 400 500 600 Mean on-state current, IT(AV) - (A) 700 800 Fig.3 Dissipation curves Where A = 0.504353 B = 0.056611 C = 0.000639 D = –0.0011 these values are valid for Tj = 125˚C for IF 500A to 2500A 4/7 www.dynexsemi.com DS502ST 1.0 250 12 I2t = Î2 x t 2 200 6 4 150 I2t Thermal impedance - (˚C/W) 8 I2t value - (A2s x 103) Peak half sine forward current - (kA) 10 Anode side cooled 0.1 Double side cooled 0.01 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 2 0 1 10 ms 1 2 3 5 10 20 100 50 0.001 0.001 0.01 Effective thermal resistance Junction to case ˚C/W Double side 0.070 0.080 0.105 0.1425 0.1 Time - (s) Single side 0.140 0.150 0.175 0.2125 1 10 Cycles at 50Hz Duration Fig.4 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 175˚C) Fig.5 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS502ST PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Holes Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø42 max 15.0 14.0 Ø19 nom Ø19 nom Anode Ø37.5 max Nominal weight: 55g Clamping force: 4.5kN ±10% Package outine type code: T Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com DS502ST POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4794-4 Issue No. 4.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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