DSA 70 C 150 HB V RRM = 150 V I FAV = 2x 35 A V F = 0.77 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 70 C 150 HB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Housing: TO-247 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings VF forward voltage min. 150 V VR = 150 V 0.68 mA VR = 150 V TVJ = 125 °C 7.5 mA IF = 35 A TVJ = 25 °C 0.90 V IF = 70 A 1.06 V IF = 35 A IF = 70 A TVJ = 125 °C 35 A V rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t = 10 ms (50 Hz), sine CJ junction capacitance VR = 24 V; f = 1 MHz TVJ = 25 °C for power loss calculation only V 0.53 threshold voltage d = 0.5 V 0.94 TC = 150°C average forward current rectangular 0.77 TVJ = 175°C I FAV © 2010 IXYS all rights reserved Unit max. TVJ = 25 °C TVJ = 25 °C VF0 IXYS reserves the right to change limits, conditions and dimensions. typ. 4.9 mΩ 0.70 K/W 175 °C TC = 25 °C 215 W TVJ = 45°C 420 A -55 Data according to IEC 60747and per diode unless otherwise specified 226 pF 20100531a DSA 70 C 150 HB Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per terminal max. Unit 50 0.25 -55 Weight mounting torque FC mounting force with clip A K/W 150 6 MD 1) typ. 1) °C g 0.8 1.2 Nm 20 120 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . In case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increased by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code Ordering Standard abcdef YYWW XXXXXX Part Name DSA 70 C 150 HB IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved D S A 70 C 150 HB Marking on Product DSA70C150HB Delivering Mode Tube = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) Base Qty Code Key 30 506708 Data according to IEC 60747and per diode unless otherwise specified 20100531a DSA 70 C 150 HB Outlines TO-247 A E A2 Q D 2x E2 1 2 3 L1 L 2x b2 3x b b4 C A1 2x e Ø P1 ØP D2 S Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 D1 4 E1 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100531a DSA 70 C 150 HB 70 100 1000 900 60 10 TVJ=175°C 50 150°C 700 125°C CT 600 800 1 IF 40 IR [A] 30 [mA] 0.1 100°C TVJ = 150°C 125°C 25°C 20 10 500 [pF] 400 75°C 0.01 300 50°C TVJ = 25°C 200 0.001 25°C 100 0 0.0 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 0 0 40 80 120 160 0 40 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 80 120 160 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 40 60 50 DC 30 d = 0.5 40 P(AV) IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 20 30 [W] [A] 20 10 10 0 0 0 50 100 150 0 200 10 TC [°C] 20 30 40 50 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 0.8 0.7 Single Pulse 0.6 0.5 ZthJC 0.4 [K/W] 0.3 0.2 0.1 Note: All curves are per diode 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100531a