IXYS DSA70C150HB

DSA 70 C 150 HB
V RRM =
150 V
I FAV = 2x 35 A
V F = 0.77 V
Schottky Diode Gen ²
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
1
2
3
DSA 70 C 150 HB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Housing: TO-247
Symbol
Definition
Conditions
VRRM
max. repetitive reverse voltage
IR
reverse current
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
VF
forward voltage
min.
150
V
VR = 150 V
0.68
mA
VR = 150 V
TVJ = 125 °C
7.5
mA
IF =
35 A
TVJ = 25 °C
0.90
V
IF =
70 A
1.06
V
IF =
35 A
IF =
70 A
TVJ = 125 °C
35
A
V
rF
slope resistance
R thJC
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms (50 Hz), sine
CJ
junction capacitance
VR = 24 V; f = 1 MHz
TVJ = 25 °C
for power loss calculation only
V
0.53
threshold voltage
d = 0.5
V
0.94
TC = 150°C
average forward current
rectangular
0.77
TVJ = 175°C
I FAV
© 2010 IXYS all rights reserved
Unit
max.
TVJ = 25 °C
TVJ = 25 °C
VF0
IXYS reserves the right to change limits, conditions and dimensions.
typ.
4.9
mΩ
0.70
K/W
175
°C
TC = 25 °C
215
W
TVJ = 45°C
420
A
-55
Data according to IEC 60747and per diode unless otherwise specified
226
pF
20100531a
DSA 70 C 150 HB
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
R thCH
thermal resistance case to heatsink
Tstg
storage temperature
per terminal
max.
Unit
50
0.25
-55
Weight
mounting torque
FC
mounting force with clip
A
K/W
150
6
MD
1)
typ.
1)
°C
g
0.8
1.2
Nm
20
120
N
IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
In case of (1) and a common cathode/anode configu ration with a non-isolated backside,
the current capability can be increased by connecting the backside.
Product Marking
Part number
Logo
Marking on product
DateCode
Assembly Code
Ordering
Standard
abcdef
YYWW
XXXXXX
Part Name
DSA 70 C 150 HB
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
D
S
A
70
C
150
HB
Marking on Product
DSA70C150HB
Delivering Mode
Tube
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
Base Qty Code Key
30
506708
Data according to IEC 60747and per diode unless otherwise specified
20100531a
DSA 70 C 150 HB
Outlines TO-247
A
E
A2
Q
D
2x E2
1
2
3
L1
L
2x b2
3x b
b4
C
A1
2x e
Ø P1
ØP
D2
S
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
D1
4
E1
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100531a
DSA 70 C 150 HB
70
100
1000
900
60
10 TVJ=175°C
50
150°C
700
125°C
CT 600
800
1
IF
40
IR
[A]
30
[mA]
0.1 100°C
TVJ =
150°C
125°C
25°C
20
10
500
[pF] 400
75°C
0.01
300
50°C
TVJ = 25°C
200
0.001 25°C
100
0
0.0
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
0
0
40
80
120
160
0
40
VR [V]
VF [V]
Fig. 1 Maximum forward voltage
drop characteristics
80
120
160
VR [V]
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
40
60
50
DC
30
d = 0.5
40
P(AV)
IF(AV)
d=
DC
0.5
0.33
0.25
0.17
0.08
20
30
[W]
[A]
20
10
10
0
0
0
50
100
150
0
200
10
TC [°C]
20
30
40
50
IF(AV) [A]
Fig. 4 Average forward current
IF(AV) vs. case temperature TC
Fig. 5 Forward power loss
characteristics
0.8
0.7
Single Pulse
0.6
0.5
ZthJC
0.4
[K/W]
0.3
0.2
0.1
Note: All curves are per diode
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100531a