ECH8601R Ordering number : ENN8328 N-Channel Silicon MOSFET ECH8601R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V ID 6.5 A Drain Current (DC) Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 40 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.4 W PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V 20 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=3.5A 0.5 RDS(on)1 RDS(on)2 ID=4A, VGS=4.5V ID=4A, VGS=4.0V RDS(on)3 RDS(on)4 ID=4A, VGS=3.1V ID=2A, VGS=2.5V Input Capacitance Ciss 1140 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 420 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 190 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions V ±10 µA µA 1.3 V 17 23 mΩ 18 24 mΩ 20 30 mΩ 24 35 mΩ 1 7.0 Marking : WB 10 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405PE MS IM TB-00001317 No.8328-1/4 ECH8601R Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 425 ns Rise Time tr td(off) See specified Test Circuit. 1500 ns See specified Test Circuit. 4000 ns tf See specified Test Circuit. 2860 ns Qg VDS=10V, VGS=10V, ID=6.5A 26.8 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=6.5A VDS=10V, VGS=10V, ID=6.5A 1.4 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=6.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions unit : mm 7011-003 5.1 0.75 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.25 Top View 2.3 5 1 1 0.25 4 0.15 2.8 0.3 0.65 V Electrical Connection 8 8 nC 1.2 2 3 4 Top view 2.9 0.07 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V VIN 4V 0V ID=3.5A RL=2.86Ω VIN D VOUT PW=10µs D.C.≤1% Rg G ECH8601R P.G 50Ω S Rg=1kΩ No.8328-2/4 ECH8601R ID -- VDS 4.0 5.5 5.0 3.5 3.0 VGS=1.5V 2.5 2.0 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0 0.10 0.05 0.15 0.20 0.25 Drain-to-Source Voltage, VDS -- V 0.30 0 ID=2A 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IT09489 RDS(on) -- Ta 50 Ta=25°C 4A 40 35 30 25 20 15 10 5 2 6 4 8 10 Gate-to-Source Voltage, VGS -- V 40 35 V =2.5 VGS 2A, = ID =3.1V VGS , A 4 I D= 30 25 20 A, I D=4 4.5V , V S= I D=4A G 15 10 =4.0V VGS 5 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT09490 yfs -- ID 3 45 0 --60 0 0 0.4 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 0.2 IT09488 RDS(on) -- VGS 50 2 140 160 IT09491 IS -- VSD 10 7 5 VDS=10V VGS=0V 5°C 7 = Ta 5 --2 °C 75 25° 3 C 2 1.0 7 5 25°C -25°C 10 2 °C Source Current, IS -- A 3 Ta=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3.5 1.0 0 3 2 0.1 7 5 3 2 1.0 0.1 0.01 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 0 7 10 IT09492 SW Time -- ID 10000 7 tf 3 2 tr 1000 7 td(on) 5 0.4 3 2 0.6 0.8 1.0 1.2 IT09493 VGS -- Qg 10 VDD=10V VGS=4V td(off) 5 0.2 Diode Forward Voltage, VSD -- V VDS=10V ID=6.5A 9 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, yfs -- S 4.0 1.5 0 Switching Time, SW Time -- ns 4.5 --25°C 4.5 6.0 2.0 25°C 5.0 V VDS=10V Ta=7 5°C 8.0V 6.0V 5.5 ID -- VGS 6.5 Drain Current, ID -- A 4.5V 6.0 Drain Current, ID -- A 4.0V 3.0V 2.5 V 6.5 8 7 6 5 4 3 2 1 100 0.1 0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT09494 0 5 10 15 20 25 Total Gate Charge, Qg -- nC 30 IT09495 PS No.8328-3/4 ECH8601R 10 7 5 3 2 ASO 1m ID=6.5A s 10 10 ms 0m s op era 1.0 7 5 3 2 0.1 7 5 3 2 ≤10µs DC tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 PD -- Ta 1.8 IDP=40A Allowable Power Dissipation, PD -- W Drain Current, ID -- A 100 7 5 3 2 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.6 1.5 1.4 1.2 1.0 1u To ta ni lD 0.8 t iss ipa tio 0.6 n 0.4 0.2 0 2 3 IT09496 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT09497 Note on usage : Since the ECH8601R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8328-4/4