LED - Chip ELC-630-29-12 25.02.2008 rev. 07 Radiation Type Technology Electrodes Red Point Source AlInGaP/GaAs N (cathode) up 360 typ. dimensions (µm) ±20 330 Ø 27 typ. thickness +4 -2 170 (±20) µm gold alloy, 1.5 µm 220 260 ±20 cathode 130 anode gold alloy, 0.5 µm 130 PS-13 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 15 mA Typ Max Unit 2.3 2.6 V IF Forward current (DC) Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 5 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power* IF = 5 mA Φe 30 40 µW Luminous intensity* IF = 5 mA IV 1.2 1.6 mcd Peak wavelength IF = 5 mA λP 620 630 Spectral bandwidth at 50% IF = 5 mA ∆λ0.5 25 nm Switching time IF = 5 mA tr , tf 40/30 ns V 635 nm *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° IV(typ) [mcd] VF(typ) [V] Quantity ELC-630-29-12 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545