2.5V Drive Pch+SBD MOSFET ES6U42 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. (6) (5) (4) (1) (2) (3) Abbreviated symbol : U42 zApplications Switching zPackage specifications Package Type zInner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (4) (5) ES6U42 ∗2 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Channel temperature Tch Power dissipation PD ∗2 Limits −20 ±12 ±1.0 ±4.0 −0.4 −4.0 150 0.7 Unit V V A A A A W / ELEMENT Limits 25 20 0.5 Unit V V A °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Symbol VRM VR IF IFSM Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cycle ∗2 Mounted on a ceramic board <MOSFET and Di> Parameter Power dissipation Range of storage temperature Symbol PD ∗ Tstg Limits Unit 0.8 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.01 - Rev.A ES6U42 Data Sheet zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.7 − Static drain-source on-state RDS (on)∗ − resistance − Forward transfer admittance Yfs ∗ 0.7 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time tf ∗ − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ − Gate-drain charge Qgd ∗ − Typ. Max. Unit − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 ±10 − −1 −2.0 390 430 800 − − − − − − − − − − − µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS= ±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −1A, VGS= −4.5V ID= −1A, VGS= −4V ID= −0.5A, VGS= −2.5V VDS= −10V, ID= −0.5A VDS= −10V VGS= 0V f= 1MHz VDD −15V VGS= −4.5V ID= −0.5A RL 30Ω RG= 10Ω VDD −15V, VGS= −4.5V ID= −1A, RL 15Ω RG= 10Ω Conditions IS= −1.0A, VGS=0V ∗Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Forward voltage VSD ∗ Typ. Max. − − −1.2 Unit V Conditions Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 µA VR= 20V ∗Pulsed <Di> Parameter Symbol Forward voltage VF Reverse current IR www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 0.1A 2/5 2009.01 - Rev.A ES6U42 Data Sheet zElectrical characteristics curves <MOSFET> 2.0 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.0V 1.5 1.0 VGS= -2.5V VGS= -2.2V 0.5 1.5 VGS= -2.4V 1.0 VGS= -2.2V 0.5 VGS= -2.0V 0.0 0.4 0.6 0.8 0.0 1.0 2.0 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 6.0 8.0 0.001 1.0 10.0 1.5 2.0 2.5 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics VGS= -2.5V VGS= -4.0V VGS= -4.5V 100 0.01 0.1 1 10000 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 Ta=25°C Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 10 100 0.01 0.1 DRAIN-CURRENT : -ID[A] 1 0.01 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 VDS= -10V Pulsed 0 0.1 0.1 DRAIN-CURRENT : -ID[A] 1 1000 0.01 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 10 10 VGS= -2.5V Pulsed VGS= -4V Pulsed DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 4.0 REVERSE DRAIN CURRENT : -Is [A] 10000 0.2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.0 VDS= -10V Pulsed VGS= -2.0V 0.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 Ta=25°C Pulsed VGS= -10V VGS= -4.0V VGS= -3.0V DRAIN CURRENT : -ID[A] Ta=25°C Pulsed DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 2.0 0.01 0.1 1 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/5 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2009.01 - Rev.A ES6U42 Data Sheet 10000 800 ID= -1.0A 700 600 ID= -0.5A 500 400 300 1000 tf td(off) 100 5 Ta=25°C VDD= -15V VGS=-4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C Pulsed 900 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 10 200 tr td(on) 1 100 0 2 4 6 8 10 12 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 1 4 3 2 Ta=25°C VDD= -15V ID= -1.0A RG=10Ω Pulsed 1 0 10 0 0.5 1 1.5 2 DRAIN-CURRENT : -ID[A] TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 2.5 1000 CAPACITANCE : C [pF] Ciss 100 Crss Coss 10 Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage <Di> 1 pulsed pulsed 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0 5 10 15 20 25 FORWARD CURRENT : IF(A) REVERSE CURRENT: IR [uA] 100000 0.1 Ta = 75℃ Ta = 25℃ 0.001 0 REVERSE VOLTAGE : VR [V] 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF(V) Fig.1 Reverse Current vs. Reverse Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Ta= - 25℃ 0.01 Fig.2 Forward Current vs. Forward Voltage 4/5 2009.01 - Rev.A ES6U42 Data Sheet zMeasurement circuit Pulse Width ID VGS VDS VGS 10% 50% RL D.U.T. 50% 10% 10% VDD RG 90% 90% VDS td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS Qg RL IG(Const.) VGS D.U.T. Qgs RG Qgd VDD Charge FIg.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.01 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. 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