FAIRCHILD FDD8750

FDD8750
N-Channel PowerTrench® MOSFET
25V, 2.7A, 40mΩ
Features
tm
General Description
„ Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A
„ Low gate resistance
This N-Channel MOSFET has been designed specifically to
improve the overall effciency of DC/DC converters using either
synchronous or conventional switching PWM controllers.It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
„ Avalanche rated and 100% tested
Application
„ RoHS Compliant
„ Low current DC-DC switching
„ Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A
„ Low gate charge: Qg(10) = 6nC(Typ)
„ Linear regulation
D
D
G
S
G
D
-PA
K
TO
-2 52
(TO -252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous(Package Limited)
ID
TC= 25°C
V
-Continuous(Silicon Limited)
TC= 25°C
(Note 1)
16
TA= 25°C
(Note 1a)
6.5
A
14
(Note 3)
Power Dissipation
TC= 25°C
Power Dissipation
TJ, TSTG
±20
2.7
-Pulsed
PD
Units
V
-Continuous
Drain-Source Avalanche Energy
EAS
Ratings
25
19
18
(Note 1a)
Operating and Storage Junction Temperature Range
3.7
–55 to +175
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
8
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD8750
©2006 Fairchild Semiconductor Corporation
FDD8750 Rev.C
Device
FDD8750
Package
D-PAK(TO-252)
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
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FDD8750 N-Channel PowerTrench® MOSFET
December 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
25
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
mV/°C
18
VDS =20V, VGS = 0V
1
TJ=150°C
250
VGS = ±20V, VGS = 0V
µA
±100
nA
2.5
V
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
1.2
2.0
ID = 250µA, referenced to 25°C
-5
VGS = 10V, ID = 2.7A
28
40
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5V, ID = 2.7A
39
60
VGS = 10V, ID = 2.7A, TJ=150°C
44
63
320
425
pF
80
110
pF
50
75
pF
mV/°C
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13V, VGS = 0V,
f = 1MHz
Ω
f = 1MHz
1.8
VDD = 13V, ID = 2.7A
VGS = 10V, RGEN = 6Ω
3
10
ns
12
22
ns
8
16
ns
5
10
ns
6
9
nC
3.4
5
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg(5)
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD =13V
ID = 2.7A
1.1
nC
1.2
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.7A
(Note 2)
IF = 2.7A, di/dt = 100A/µs
0.8
1.6
V
16
24
ns
7
11
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper;
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 3.6A, VDD = 25V, VGS = 10V.
FDD8750 Rev.C
2
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FDD8750 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
50
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
60
VGS = 10V
40
VGS = 5V
30
VGS = 4.5V
20
10
VGS = 4V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
VGS = 4V
1.5
VGS = 5V
1.0
0.5
VGS = 10V
0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID = 2.7A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
30
TJ = -55oC
TJ = 25oC
TJ = 175oC
10
0
0
2
4
6
VGS, GATE TO SOURCE VOLTAGE (V)
8
Figure 5. Transfer Characteristics
FDD8750 Rev.C
60
ID = 7.4A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
TJ = 150oC
60
TJ = 25oC
40
20
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
40
20
50
100
1.8
1.6
20
30
40
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
VGS = 4.5V
2.0
20
10
VGS = 0V
1
0.1
TJ = 175oC
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDD8750 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
600
VDD = 8V
ID = 2.7A
8
VDD = 13V
6
VDD = 18V
4
2
0
0
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
2
4
6
Qg, GATE CHARGE(nC)
Coss
100
20
0.1
8
Figure 7. Gate Charge Characteristics
30
20
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
3
TJ = 25oC
2
TJ = 125oC
TJ = 150oC
16
VGS = 10V
12
8
Limited by Package
VGS =4.5V
4
o
1
1E-3
0.01
0.1
1
tAV, TIME IN AVALANCHE(ms)
0
10
P(PK), PEAK TRANSIENT POWER (W)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1ms
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
0.1
0.1
1
10ms
DC
10
60
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDD8750 Rev.C
50
75
100
125
150
175
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100us
1
25
o
50
10
RθJC = 8 C/W
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
Crss
f = 1MHz
VGS = 0V
3000
FOR TEMPERATURES
VGS = 10V
1000
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
c
----------------------150
I = I25
Tc = 25oC
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, PULSE WIDTH (s)
0
10
1
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
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FDD8750 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDD8750 Rev.C
5
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FDD8750 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDD8750 Rev. C
6
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FDD8750 N-Channel PowerTrench® MOSFET
TRADEMARKS