FDMS8670 tm ® N-Channel Power Trench MOSFET 30V, 42A, 2.6mΩ Features General Description Max rDS(on) = 2.6mΩ at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance. This part exhibits industry leading switching FOM (RDS*Qgd) to enhance DC-DC synchronous rectifier efficiency. Max rDS(on) = 3.8mΩ at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 42 135 (Note 1a) -Pulsed 24 A 150 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 288 78 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8670 Device FDMS8670 ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev.C Package Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8670 N-Channel Power Trench® MOSFET April 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 24V, 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 19.5 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5.9 VGS = 10V, ID = 24A 2.1 2.6 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 18A 3.0 3.8 VGS = 10V, ID = 24A, TJ = 125°C 3.0 3.8 VDD = 5V, ID = 24A 117 gFS Forward Transconductance 1.0 1.7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2965 3940 pF 1395 1855 pF 180 265 pF Ω 1.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 24A, VGS = 10V, RGEN = 6Ω VDD = 15V, ID = 24A 14 24 ns 5 10 ns 33 53 ns 4 10 ns 45 63 nC 23 33 nC 8.3 nC 5.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 24A (Note 2) 0.8 1.3 VGS = 0V, IS = 2.1A (Note 2) 0.7 1.2 44 71 ns 27 43 nC IF = 24A, di/dt = 100A/µs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 1mH, IAS = 24A, VDD = 27V, VGS = 10V. ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev.C 2 www.fairchildsemi.com FDMS8670 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 ID, DRAIN CURRENT (A) VGS = 3.5V VGS = 4V 100 VGS = 4.5V VGS = 10V 50 VGS = 3V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 3V 3.0 VGS = 3.5V 2.5 VGS = 4V 2.0 1.5 VGS = 4.5V 1.0 VGS = 10V 0.5 4 0 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.2 1.0 0.8 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 ID = 24A VGS = 10V 1.4 0.6 -75 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 8 6 TJ = 125oC 4 TJ = 25oC 2 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 150 IS, REVERSE DRAIN CURRENT (A) 800 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 120 ID, DRAIN CURRENT (A) ID = 24A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature VDS = 5V 90 TJ = 150oC 60 TJ = 25oC 30 TJ = -55oC 0 0 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 1.6 100 ID, DRAIN CURRENT(A) 1 2 3 4 VGS = 0V 100 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev.C 3 1.2 www.fairchildsemi.com FDMS8670 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 8000 ID = 24A 8 VDD = 15V 6 VDD = 20V VDD = 10V Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 4 1000 Coss 100 2 10 20 30 40 50 Figure 7. Gate Charge Characteristics 10 150 ID, DRAIN CURRENT (A) 10 TJ = 25oC TJ = 125oC 120 VGS = 10V 90 VGS = 4.5V 60 30 o RθJC = 1.6 C/W Limited by Package 1 0.01 0.1 1 10 100 0 25 800 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 400 100 1ms 10 10ms 1 30 Figure 8. Capacitance vs Drain to Source Voltage 40 IAS, AVALANCHE CURRENT(A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) ID, DRAIN CURRENT (A) Crss 30 0.1 0 0 f = 1MHz VGS = 0V THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125oC/W 10s o DC TA = 25 C 0.01 0.01 0.1 1 10 100 SINGLE PULSE Rθ JA = 125oC/W TA = 25oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev.C VGS = 10V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8670 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev.C 5 www.fairchildsemi.com FDMS8670 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS8670 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev.C 6 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 ©2008 Fairchild Semiconductor Corporation FDMS8670 Rev.C 7 www.fairchildsemi.com FDMS8670 N-Channel Power Trench® MOSFET TRADEMARKS