FAIRCHILD FJN3303FTA

FJN3303F
High Voltage Fast-Switching NPN Power Transistor
Features
•
•
•
•
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Charger
Green packaging
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
1.5
A
ICP
Collector Current (Pulse) *
3
A
IB
Base Current (DC)
0.75
A
IBP
Base Current (Pulse) *
1.5
A
TJ
Junction Temperature
150
°C
-65 to +150
°C
Value
Units
1.1
650
W
mW
TSTG
Storage Temperature range
* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Parameter
Total Device Dissipation
TC = 25°C
TA = 25°C
RθJC
Thermal Resistance Junction-Case
48
°C/W
RθJA
Thermal Resistance Junction-Ambient
190
°C/W
Ordering Information
Part Number
Marking Info.
Package
Packing Method
Remarks
FJN3303FBU
J3303F
TO-92 (Straight)
BULK
Green EMC
FJN3303FTA
J3303F
TO-92 (Form)
AMMO
Green EMC
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
1
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
December 2009
Symbol
TA = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 500μA, IE = 0
700
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 500μA, IC = 0
ICBO
Collector Cut-off Current
VCB = 700V, IE = 0
10
μA
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
10
μA
hFE1
hFE2
DC Current Gain
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1.0A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A
IC = 1.5A, IB = 0.5A
0.5
1.0
3.0
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A
1.0
1.2
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.1A
tON
Turn On Time
tSTG
Storage Time
VCC = 125V, IC = 1A
IB1 = - IB2 = -0.2A
RL = 125Ω
tF
Fall Time
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
9
14
5
V
23
4
MHz
1.1
μs
4.0
μs
0.7
μs
www.fairchildsemi.com
2
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
100
1.6
VCE = 2V
1.4
o
TA = 75 C
o
1.2
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
TA = 125 C
IB = 120 mA
1.0
0.8
IB = 40 mA
0.6
IB = 20 mA
0.4
o
TA = - 25 C
o
TA = 25 C
10
0.2
1
1E-3
0.0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
10
o
TA = 75 C
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
o
TA = 125 C
IC = 4 IB
o
TA = 25 C
1
o
TA = - 25 C
0.1
0.01
0.01
0.1
1
IC = 4 I B
o
1
o
TA = - 25 C
o
o
TA = 125 C
0.1
0.01
10
TA = 25 C
TA = 75 C
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Resistive Load Switching Time
10
tSTG & tF [μs], SWITCHING TIME
tSTG & tF [μs], SWITCHING TIME
10
tSTG
1
tF
0.1
IB1 = - IB2 = 0.2A
VCC = 125V
0.01
0.1
1
tF
0.1
IB1 = 120mA, IB2 = - 40mA
VCC = 310V
0.01
0.1
1
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
tSTG
www.fairchildsemi.com
3
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
Figure 7. Forward Biased Safe Operating Area
Figure 8. Reverse Biased Safe Operating Area
10
IC (DC)
IC [A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
10
1
0.1
0.01
o
TC = 25 C
Single Pulse
1E-3
0.1
1
10
100
1
IB1 = 1A, RB2 = 0
VCC = 50V, L =1 mH
0.1
100
1000
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
PC [W], COLLECTOR POWER DISSIPATION
1.4
1.2
1.0
o
TA = 25 C
0.8
o
TC = 25 C
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
o
TA [ C], AMBIENT TEMPERATURE
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
4
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics (Continued)
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
Physical Dimension
TO-92 (STD Straight Lead)
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
5
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
Physical Dimension (Continued)
TO-92 (Lead Form_J61Z)
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
6
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com