FJN3303F High Voltage Fast-Switching NPN Power Transistor Features • • • • High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Charger Green packaging TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) * 3 A IB Base Current (DC) 0.75 A IBP Base Current (Pulse) * 1.5 A TJ Junction Temperature 150 °C -65 to +150 °C Value Units 1.1 650 W mW TSTG Storage Temperature range * Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Parameter Total Device Dissipation TC = 25°C TA = 25°C RθJC Thermal Resistance Junction-Case 48 °C/W RθJA Thermal Resistance Junction-Ambient 190 °C/W Ordering Information Part Number Marking Info. Package Packing Method Remarks FJN3303FBU J3303F TO-92 (Straight) BULK Green EMC FJN3303FTA J3303F TO-92 (Form) AMMO Green EMC © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 www.fairchildsemi.com 1 FJN3303F — High Voltage Fast-Switching NPN Power Transistor December 2009 Symbol TA = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 ICBO Collector Cut-off Current VCB = 700V, IE = 0 10 μA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 10 μA hFE1 hFE2 DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A 1.0 1.2 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A tON Turn On Time tSTG Storage Time VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL = 125Ω tF Fall Time © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 9 14 5 V 23 4 MHz 1.1 μs 4.0 μs 0.7 μs www.fairchildsemi.com 2 FJN3303F — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain 100 1.6 VCE = 2V 1.4 o TA = 75 C o 1.2 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT TA = 125 C IB = 120 mA 1.0 0.8 IB = 40 mA 0.6 IB = 20 mA 0.4 o TA = - 25 C o TA = 25 C 10 0.2 1 1E-3 0.0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 10 o TA = 75 C VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE o TA = 125 C IC = 4 IB o TA = 25 C 1 o TA = - 25 C 0.1 0.01 0.01 0.1 1 IC = 4 I B o 1 o TA = - 25 C o o TA = 125 C 0.1 0.01 10 TA = 25 C TA = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time 10 tSTG & tF [μs], SWITCHING TIME tSTG & tF [μs], SWITCHING TIME 10 tSTG 1 tF 0.1 IB1 = - IB2 = 0.2A VCC = 125V 0.01 0.1 1 tF 0.1 IB1 = 120mA, IB2 = - 40mA VCC = 310V 0.01 0.1 1 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 tSTG www.fairchildsemi.com 3 FJN3303F — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area 10 IC (DC) IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 10 1 0.1 0.01 o TC = 25 C Single Pulse 1E-3 0.1 1 10 100 1 IB1 = 1A, RB2 = 0 VCC = 50V, L =1 mH 0.1 100 1000 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating PC [W], COLLECTOR POWER DISSIPATION 1.4 1.2 1.0 o TA = 25 C 0.8 o TC = 25 C 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175 o TA [ C], AMBIENT TEMPERATURE © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 www.fairchildsemi.com 4 FJN3303F — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) FJN3303F — High Voltage Fast-Switching NPN Power Transistor Physical Dimension TO-92 (STD Straight Lead) Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 www.fairchildsemi.com 5 FJN3303F — High Voltage Fast-Switching NPN Power Transistor Physical Dimension (Continued) TO-92 (Lead Form_J61Z) Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ ® FACT FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com